DE875968C - Electrically asymmetrical conductive system - Google Patents
Electrically asymmetrical conductive systemInfo
- Publication number
- DE875968C DE875968C DEL9982A DEL0009982A DE875968C DE 875968 C DE875968 C DE 875968C DE L9982 A DEL9982 A DE L9982A DE L0009982 A DEL0009982 A DE L0009982A DE 875968 C DE875968 C DE 875968C
- Authority
- DE
- Germany
- Prior art keywords
- carbon
- semiconductor
- layer
- systems
- electrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
Description
Bei .der .Herstellung von Flächengleichrichtern, insbesondere mit Germanium oder ähnlichen Halbleitern, welche imstande sind, große Stromdichten zu transportieren, besteht die grundsätzliche Schwierigkeit, Elektroden anzubringen, welche unter dem Einfluß der sie durchfließenden hohen Ströme und der dabei unter Umständen auftreffenden hohen Temperatur nicht in chemische Wechselwirkung mit dem Halbleitermaterial treten. Eines der wenigen Materialien, mit dem sich dieses Ziel erreichen läßt, ist der Kohlenstoff. Leider lag dieser bisher in technisch brauchbarer Form nur als Graphit vor, welches stets eine poröse Struktur und geringe Dichte aufweist. Infolgedessen war es bisher nicht möglich, elektrisch und thermisch hoch beanspruchbare Schichten, welche sich gegenüber der Diffusion von Metallionen als undurchlässig erwiesen, aus derartigen Köhlenstoffmodifikationen für die fraglichen Halbleitersysteme zu verwenden. Dieses wird erst möglich, wenn man durch Verdampfen im Lichtbogen bei vermindertem Druck bzw. im Vakuum Kohlenstoffschichten erzeugt.In .the .production of surface rectifiers, especially with Germanium or similar semiconductors, which are capable of high current densities transport, there is a fundamental difficulty in attaching electrodes, which are under the influence of the high currents flowing through them and those under them High temperature not in chemical interaction with the circumstances Stepping semiconductor material. One of the few materials that can do this is the carbon. Unfortunately, this was previously technically more useful Form only as graphite, which always has a porous structure and low density having. As a result, it has not previously been possible to be electrically and thermally high stressable layers, which are opposed to the diffusion of metal ions as proved impermeable from such carbon modifications to the questionable ones To use semiconductor systems. This is only possible when you evaporate Generates carbon layers in an arc at reduced pressure or in a vacuum.
Die Erfindung bezieht sich auf ein .elektrisch unsymmetrisch leitendes System, insbesondere Sperrschichtgleichrichter oder gesteuerte Halbleitersysteme mit einem Halbleiter aus einem Element der 4. Gruppe des Periodischen Systems, vorzugsweise Germanium oder Silicium, oder einer Verbindung dieser Elemente, das sich von den bisher bekannten dadurch unterscheidet, daß es eine oder mehrere sperrschichtfreie Elektroden enthält, die mindestens zum Teil aus einer durch Verdampfen bei vermindertem Druck aufgebrachten Kohlenstoffschicht bestehen. Selbstverständlich kann diese Kohlenstoffschicht ihrerseits mit Materialienbedeckt werden, die auf den eigentlichen Vorgang der Unsymmetrie der elektrischen Leitung ohne Einfluß sind, aber die technologische Verwendung solcher Systeme erleichtern, indem sie z. B. das Anlöten oder Anschrauben von Kontakten und Zuleitungen ermöglichen. Somit ist also unter Elektrode in diesem Fall lediglich der Kohlenstoff zu verstehen.The invention relates to an electrically asymmetrically conductive one System, especially junction rectifier or controlled semiconductor systems with a semiconductor from an element of the 4th group of the periodic table, preferably Germanium or silicon, or a compound of these elements, which is different from the hitherto known differs in that there is one or more free barrier layers Contains electrodes that are at least in part made up of a reduced by evaporation Pressure applied carbon layer exist. Of course, this carbon layer can in turn are covered with materials that affect the actual process of asymmetry the electrical conduction are without influence, but the technological use of such Facilitate systems by z. B. soldering or screwing on contacts and enable supply lines. So in this case only electrode is below to understand the carbon.
Die Dicke der Kohlenstoffschicht wird so gewählt, daß sie mindestens io-5 cm beträgt.The thickness of the carbon layer is chosen so that it is at least io-5 cm.
Bewährt hat sich ein Verfahren zum Herstellen solcher elektrisch unsymmetrisch leitender Systeme, bei dem die Kohlenstöffschicht auf den Halbleiter durch Verdampfen im Vakuum aufgebracht wird. Dies erfolgt vorteilhaft dadurch, daß man den Kohlenstoff mittels Lichtbogen zwischen Kohlenstoffelektroden im Vakuum verdampft und die zu bedampfenden Halbleiter zweckmäßig vor den Fußpunkten des Bogens anordnet. Dabei bildet sich eine Graphitschicht, die ein metalldichtes Gefüge besitzt. Es ist vorteilhaft, die Halbleiterschicht vor dem Aufbringen des Kohlenstoffes aufzuraühen.A method for producing such electrically asymmetrical ones has proven successful conductive systems in which the carbon layer is deposited on the semiconductor by evaporation is applied in a vacuum. This is advantageously done by the fact that the carbon evaporated by means of an arc between carbon electrodes in a vacuum and the too expediently arranges evaporating semiconductor in front of the base points of the arc. Included A graphite layer forms, which has a metal-tight structure. It is beneficial to roughen the semiconductor layer before applying the carbon.
Außerdem hat es sich als günstig herausgestellt, vor dem Aufbringen des Kohlenstoffes den Halbleiter mit einer metallischen Schicht, beispielsweise aus Molybdän, zu versehen, das gegenüber dem Kohlenstoff chemische Bindungskräfte besitzt. Diese Schicht soll eine Stärke von weniger als io-4 cm, vorzugsweise io-5 cm, aufweisen.Also, it was found to be beneficial before applying of carbon the semiconductor with a metallic layer, for example made of molybdenum, to provide chemical bonding forces with respect to carbon owns. This layer should have a thickness of less than 10-4 cm, preferably 10-5 cm.
Die Figuren zeigen schematisch die Schichtenfolge für zwei Beispiele gemäß der Lehre der Erfindung. In Fig. i ist i eine gesandete Germaniumschicht, auf die eine Kohlenstoffschicht 2 von mindestens io-4 cm Stärke aufgedampft wird. In Fig. 2 ist das gesandete Silicium 3 mit einer Molybdänschicht 4 von io-5 cm Stärke bedampft, auf die die Kohlenstoffschicht 6 von 1o-4 cm aufgedampft ist.The figures show schematically the sequence of layers for two examples according to the teaching of the invention. In Fig. I i is a sanded germanium layer, onto which a carbon layer 2 of at least 10 -4 cm thickness is vapor-deposited. In Fig. 2, the sanded silicon 3 has a molybdenum layer 4 of 10 -5 cm thick vapor-deposited, onto which the carbon layer 6 is vapor-deposited by 1o-4 cm.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEL9982A DE875968C (en) | 1951-09-04 | 1951-09-04 | Electrically asymmetrical conductive system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEL9982A DE875968C (en) | 1951-09-04 | 1951-09-04 | Electrically asymmetrical conductive system |
Publications (1)
Publication Number | Publication Date |
---|---|
DE875968C true DE875968C (en) | 1953-05-07 |
Family
ID=7258237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEL9982A Expired DE875968C (en) | 1951-09-04 | 1951-09-04 | Electrically asymmetrical conductive system |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE875968C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1068394B (en) * | 1959-11-05 | |||
EP0072938A2 (en) * | 1981-08-20 | 1983-03-02 | Siemens Aktiengesellschaft | Method of connecting a semiconductor chip to a chip carrier |
-
1951
- 1951-09-04 DE DEL9982A patent/DE875968C/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1068394B (en) * | 1959-11-05 | |||
EP0072938A2 (en) * | 1981-08-20 | 1983-03-02 | Siemens Aktiengesellschaft | Method of connecting a semiconductor chip to a chip carrier |
EP0072938A3 (en) * | 1981-08-20 | 1985-01-09 | Siemens Aktiengesellschaft | Method of connecting a semiconductor chip to a chip carrier |
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