DE881973C - Process for the production of electrically asymmetrically conductive systems - Google Patents

Process for the production of electrically asymmetrically conductive systems

Info

Publication number
DE881973C
DE881973C DENDAT881973D DE881973DA DE881973C DE 881973 C DE881973 C DE 881973C DE NDAT881973 D DENDAT881973 D DE NDAT881973D DE 881973D A DE881973D A DE 881973DA DE 881973 C DE881973 C DE 881973C
Authority
DE
Germany
Prior art keywords
semiconductor
carbon
vapor
vapor deposition
systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DENDAT881973D
Other languages
German (de)
Inventor
Guenther Dipl-Ing Dobke
Werner Dr Phil Koch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of DE881973C publication Critical patent/DE881973C/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Description

Verfahren zum Herstellen von elektrisch unsymmetrisch leitenden Systemen Zur Erzeugung kristalliner Halbleiterschichten auf einem Trägermaterial, insbesondere zur Erzeugung von Germaniumschichten, ist es erforderlich, daß die Trägerschicht selbst definiert kristallin gehalten ist. Dieses ist bei Kohlenstoff der bisher technisch brauchbaren Art normalerweise nicht der Fall. Man muß außerdem zur Erzielung geeigneter kristalliner Flächen definierter Zusammensetzung sauberen Kohlenstoff verwenden, weil dieser beim Aufdampfen des kristallinen Halbleiters auf Kohlenstoff als Trägersubstanz erhitzt werden muß und dann dabei die Schmelzbestandteile in den kristallinen Halbleiter übergehen würden und dort zur Bildung unerwünschter Störstellen führen würde.Process for the production of electrically asymmetrically conductive systems For producing crystalline semiconductor layers on a carrier material, in particular for the production of germanium layers, it is necessary that the carrier layer is kept self-defined crystalline. This is the same as before for carbon technically usable type is usually not the case. One must also achieve it suitable crystalline surfaces of defined composition clean carbon use because this is when the crystalline semiconductor is vapor deposited onto carbon must be heated as a carrier substance and then the enamel components in the crystalline semiconductor would pass over and there to form undesirable Would lead to defects.

Die Erfindung betrifft nun ein Verfahren zum Herstellen von elektrisch unsymmetrisch leitenden Systemen, insbesondere Sperrschichtgleichrichtern oder gesteuerten Halbleitersystemen mit einem Halbleiter aus einem Element der IV. Gruppe des Periodischen Systems, vorzugsweise Germanium oder Silicium oder einer Verbindung bzw. Legierung der Elemente, das sich von den bisher bekannten dadurch unterscheidet, daß das Halbleitermaterial auf eine Kohlenstoffschicht aufgedampft wird, die ihrerseits durch Aufdampfen auf einen Träger im Vakuum oder unter vermindertem Druck erzeugt ist.The invention now relates to a method for producing electrical asymmetrically conductive systems, especially junction rectifiers or controlled Semiconductor systems with a semiconductor from an element of group IV of the periodic Systems, preferably germanium or silicon or a compound or alloy of the elements, which differs from those previously known in that the semiconductor material is vapor deposited onto a carbon layer, which in turn is deposited on by vapor deposition a carrier is generated in vacuo or under reduced pressure.

Es hat sich als besonders günstig erwiesen, die Kohlenstoffschicht durch Kondensation von Kohlenstoffdampf herzustellen, der in den Fußpunkten eines zwischen Kohlenelektroden im Vakuum oder unter vermindertem Druck brennenden Lichtbogens erzeugt wird. Weiterhin ist es unter Umständen vorteilhaft, vor dem Aufdampfen des Halbleiters einige Atomlagen eines Materials aufzudampfen, das gegenüber dem Kohlenstoff Bindungskräfte besitzt und eine gleichmäßige flächenhafte Kondensation des Halbleiters fördert. Als solcher Stoff ist zum Aufbringen von Germanium z. B. Silicium zu nennen.The carbon layer has proven to be particularly beneficial to produce by condensation of carbon vapor, which in the foot points of a between carbon electrodes in vacuum or under reduced pressure burning arc is produced. Furthermore, it may be advantageous, before the vapor deposition Semiconductor to evaporate a few atomic layers of a material, the opposite the carbon has binding forces and an even surface condensation of the semiconductor promotes. As such a substance for the application of germanium z. B. To mention silicon.

Bei der Verwendung eines Zwischenmaterials ist es zweckmäßig, das System vor dem Aufbringen der Halbleitersubstanz auf eine so hohe Temperatur zu erhitzen, daß zum mindesten teilweise I,#arbidbildung eintritt. Im angefübrten Beispiel wird das durch Tempern bei etwa zooo° C im Vakuum erreicht.When using an intermediate material, it is useful that System before applying the semiconductor substance to such a high temperature heat that at least partially I, # arbidbildung occurs. In the example given this is achieved by tempering at around zooo ° C in a vacuum.

Claims (3)

PATENTANSPRÜCHE: r. Verfahren zum Herstellen von elektrisch unsymmetrisch leitenden Systemen, insbesondere Sperrschichtgleichrichtern oder steuerbaren Halbleitersystemen, mit einem Halbleiter aus einem Element der IV. Gruppe des Periodischen Systems, vorzugsweise Germanium oder Silicium oder einer Verbindung der Elemente, dadurch gekennzeichnet, daß das Halbleitermaterial auf eine Kohlenstoffschicht aufgedampft wird, die ihrerseits durch Aufdampfen auf einen Träger im Vakuum oder unter vermindertem Druck erzeugt ist. PATENT CLAIMS: r. Method for producing electrically unbalanced conductive systems, especially junction rectifiers or controllable semiconductor systems, with a semiconductor from an element of group IV of the periodic table, preferably germanium or silicon or a compound of the elements, thereby characterized in that the semiconductor material is vapor-deposited on a carbon layer is, in turn, by vapor deposition on a support in vacuo or under reduced Pressure is generated. 2. Verfahren nach Anspruch r, dadurch gekennzeichnet, däß die Kohlenstoffschicht durch Kondensation von Kohlenstoffdampf hergestellt wird, der in den Fußpunkten eines zwischen Kohlenelektroden im Vakuum oder unter vermindertem Druck brennenden Lichtbogens erzeugt wird. 2. The method according to claim r, characterized in that the Carbon layer is produced by condensation of carbon vapor, the in the base of one between carbon electrodes in vacuum or under reduced Burning arc pressure is generated. 3. Verfahren nach Anspruch z und 2, dadurch gekennzeichnet, daß vor dem Aufdampfen des Halbleiters -einige Atomlagen eines Materials aufgedampft werden, das gegenüber dem Kohlenstoff Bindungskräfte besitzt und eine gleichmäßige Flächenkondensation des Halbleiters fördert. q.. Verfahren nach Anspruch z oder einem der folgenden, dadurch gekennzeichnet, daß die Temperatur der Kohlenstoffträgerschicht beim Aufdampfen des Halbleitermaterials mindestens 300°'C beträgt. S. Verfahren nach Anspruch 3, dadurch gekennzeichnet, daß das System vor dem Aufbringen der Halbleitersubstanz auf eine so hohe Temperatur erhitzt wird, daß mindestens teilweise Karbidbildung eintritt.3. The method according to claim z and 2, characterized characterized in that -some atomic layers of a material before the vapor deposition of the semiconductor be vapor-deposited, which has binding forces with respect to the carbon and a promotes uniform surface condensation of the semiconductor. q .. method according to claim z or one of the following, characterized in that the temperature of the carbon support layer during the vapor deposition of the semiconductor material is at least 300 ° C. See procedure according to claim 3, characterized in that the system prior to the application of the semiconductor substance is heated to such a high temperature that at least partial carbide formation entry.
DENDAT881973D 1951-09-03 Process for the production of electrically asymmetrically conductive systems Expired DE881973C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0009984 1951-09-03

Publications (1)

Publication Number Publication Date
DE881973C true DE881973C (en) 1953-05-21

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ID=7258238

Family Applications (1)

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DENDAT881973D Expired DE881973C (en) 1951-09-03 Process for the production of electrically asymmetrically conductive systems

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Country Link
DE (1) DE881973C (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1041163B (en) * 1955-03-02 1958-10-16 Licentia Gmbh Electrically controllable semiconductor system, e.g. B. surface transistor, made of a single crystal semiconductor body
DE1054802B (en) * 1956-03-05 1959-04-09 Westinghouse Electric Corp Process for the evaporation of substances, in particular for the creation of the transition zones (junctions) of transistors
DE1201073B (en) * 1954-07-30 1965-09-16 Siemens Ag Process for producing a semiconducting alloy
DE1212640B (en) * 1952-10-24 1966-03-17 Siemens Ag Method for producing a semiconductor component having a semiconductor body joined by heat treatment
DE1239766B (en) * 1962-07-12 1967-05-03 Telefunken Patent Method for applying a firmly adhering nickel layer to a glossy carbon resistance layer applied to a ceramic carrier
DE1269102B (en) * 1960-11-10 1968-05-30 Siemens Ag Process for the production of a semiconducting silicon layer on a graphite base

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1212640B (en) * 1952-10-24 1966-03-17 Siemens Ag Method for producing a semiconductor component having a semiconductor body joined by heat treatment
DE1201073B (en) * 1954-07-30 1965-09-16 Siemens Ag Process for producing a semiconducting alloy
DE1041163B (en) * 1955-03-02 1958-10-16 Licentia Gmbh Electrically controllable semiconductor system, e.g. B. surface transistor, made of a single crystal semiconductor body
DE1054802B (en) * 1956-03-05 1959-04-09 Westinghouse Electric Corp Process for the evaporation of substances, in particular for the creation of the transition zones (junctions) of transistors
DE1269102B (en) * 1960-11-10 1968-05-30 Siemens Ag Process for the production of a semiconducting silicon layer on a graphite base
DE1239766B (en) * 1962-07-12 1967-05-03 Telefunken Patent Method for applying a firmly adhering nickel layer to a glossy carbon resistance layer applied to a ceramic carrier

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