DEP0038601DA - Method of manufacturing selenium rectifiers - Google Patents
Method of manufacturing selenium rectifiersInfo
- Publication number
- DEP0038601DA DEP0038601DA DEP0038601DA DE P0038601D A DEP0038601D A DE P0038601DA DE P0038601D A DEP0038601D A DE P0038601DA
- Authority
- DE
- Germany
- Prior art keywords
- carrier electrode
- selenium
- degassing
- intermediate layer
- rectifiers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title claims description 11
- 229910052711 selenium Inorganic materials 0.000 title claims description 11
- 239000011669 selenium Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000969 carrier Substances 0.000 claims description 14
- 238000007872 degassing Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000010025 steaming Methods 0.000 claims description 4
- 206010037844 Rash Diseases 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 238000009834 vaporization Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
Bei der Massenherstellung von Selengleichrichtern wird das Selen auf eine Trägerelektrode aufgedampft. Es zeigen sich auf den bedampften Platten gelegentlich zahlreiche pockenartige Kerben. Solche Platten sind für die Herstellung betriebssicherer Gleichrichter für höhere Spannungen nicht zu verwenden. Man muss deshalb entweder durch eine nachträgliche Behandlung diese Stellen unschädlich machen oder nur Teile der Platten verwenden, die nicht diesen Fehler aufweisen. Beide Verfahren bedeuten eine Erschwerung der Fertigung, die bei Anwendung des erfindungsgemäßen Verfahrens in einfacher Weise dadurch vermieden wird, dass die Trägerelektrode von dem Aufdampfen des Selen solange und so hoch, vorzugsweise über die bei der Bedampfung auftretende Temperatur, erhitzt wird, dass beim Bedampfen keine Gasausbrüche aus der Trägerelektrode stattfinden. Die pockenartigen Kerben entstehen nämlich durch Gasausbrüche aus der Trägerelektrode, sobald diese während der Bedampfung auf über 100°C erhitzt wird. Trägt man durch Anwendung des erfindungsgemäßen Verfahrens dafür Sorge, dass das Gas bzw. verdampfbare Substanzen schon vor dem Bedampfen aus der Trägerelektrode entfernt werden, so tritt während der Bedampfung keine zu den erwähnten Störungen führende Gasabgabe mehr ein.In the mass production of selenium rectifiers, the selenium is vapor-deposited onto a carrier electrode. Occasionally, numerous pox-like notches appear on the vapor-coated plates. Such plates are not to be used for the production of operationally reliable rectifiers for higher voltages. You must therefore either render these areas harmless by subsequent treatment or only use parts of the panels that do not have this defect. Both methods make production more difficult, which is avoided when using the method according to the invention in a simple manner that the carrier electrode is heated by the evaporation of the selenium for as long and so high, preferably above the temperature occurring during the evaporation, that no Gas outbreaks take place from the carrier electrode. The pox-like notches are caused by gas eruptions from the carrier electrode as soon as it is heated to over 100 ° C during steaming. If, by using the method according to the invention, care is taken that the gas or vaporizable substances are removed from the carrier electrode before the vaporization, then no more gas release leading to the above-mentioned disturbances occurs during the vaporization.
Es empfiehlt sich, das Entgasen im Vakuum vorzunehmen. Man kann die Erhitzung vor dem Bedampfen mit Selen in einem besonderen Ofen durchführen. Während des Transportes von dem Entgasungsofen in den Bedampfungsraum tritt in der Regel keine störende Gasaufnahme ein.It is advisable to carry out the degassing in a vacuum. The heating can be carried out in a special oven before steaming with selenium. As a rule, no disruptive gas uptake occurs during transport from the degassing furnace into the steaming room.
Zum Herstellen von Selengleichrichtern mit auf die Trägerelektrode aufgebrachter Zwischenschicht, insbesondere einer Wismut-Zwischenschicht, empfiehlt es sich, die Erhitzung zum Entgasen nach dem Aufbringen der Zwischenschicht vorzunehmen.To produce selenium rectifiers with an intermediate layer applied to the carrier electrode, in particular a bismuth intermediate layer, it is advisable to carry out the heating for degassing after the application of the intermediate layer.
Die Temperatur, bis auf die bei dem erfindungsgemäßen Verfahren erhitzt werden muss, hängt im gewissen Umfang von dem Material der Trägerelektrode und dem Verfahren zum Reinigen bzw. Aufrauhen ihrer Oberfläche ab. Bei Trägerelektroden aus Aluminium hat es sich bewährt, zum Entgasen auf mindestens 120°C zu erhitzen.The temperature up to which the method according to the invention has to be heated depends to a certain extent on the material of the carrier electrode and the method for cleaning or roughening its surface. In the case of carrier electrodes made of aluminum, it has proven useful to heat them to at least 120 ° C for degassing.
Claims (5)
Family
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