DE487347C - Process for the production of plate or disk-shaped electrodes for dry metal rectifiers - Google Patents

Process for the production of plate or disk-shaped electrodes for dry metal rectifiers

Info

Publication number
DE487347C
DE487347C DES81488D DES0081488D DE487347C DE 487347 C DE487347 C DE 487347C DE S81488 D DES81488 D DE S81488D DE S0081488 D DES0081488 D DE S0081488D DE 487347 C DE487347 C DE 487347C
Authority
DE
Germany
Prior art keywords
disk
shaped electrodes
plate
production
dry metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES81488D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to DES81488D priority Critical patent/DE487347C/en
Application granted granted Critical
Publication of DE487347C publication Critical patent/DE487347C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/168—Treatment of the complete device, e.g. electroforming, ageing

Description

Verfahren zum Herstellen von platten- oder scheibenförmigen Elektroden für trockene Metallgleichrichter Trockene Metallgleichrichter, deren Zellen aus einem Metall, z. B. Kupfer, und einem auf seiner Oberfläche erzeugten Oxydationsprodukt dieses Metalls bestehen, sind bekannt. Es hat sich nun gezeigt, daß sich in scheibenförmigen Elektroden, die zum Aufbau von Gleichrichtern der erwähnten Art bestimmt sind, bei der Herstellung, insbesondere durch den Oxydationsprozeß, Spannungen ausbilden können, die beim Gebrauch des Gleichrichters Formänderungen der vorher ebenen Platten herbeiführen und dadurch die Gleichmäßigkeit des elektrischen Kontaktes mit der Gegenelektrode beeinträchtigen, den Wirkungsgrad des Gleichrichters vermindern oder sonst irgendwie die Brauchbarkeit der Platten für den angegebenen Zweck herabsetzen. Diesem Mangel wird gemäß der Erfindung dadurch abgeholfen, daß die platten- oder scheibenförmigen Elektroden außer dem Oxydationsprozeß einem Ausglühen im Vakuum oder in einer indifferenten Atmosphäre unterworfen werden. Das Ausglühen wird zweckmäßig bei einer Temperatur vorgenommen, die unterhalb jener Temperatur liegt, bei welcher die Oxydation stattfindet.Process for the production of plate-shaped or disc-shaped electrodes for dry metal rectifiers Dry metal rectifiers whose cells are made of a metal, e.g. B. copper, and an oxidation product generated on its surface consist of this metal are known. It has now been shown that in disc-shaped Electrodes, which are intended for the construction of rectifiers of the type mentioned, at tensions can develop during manufacture, in particular due to the oxidation process, which cause changes in shape of the previously flat plates when the rectifier is used and thereby the uniformity of the electrical contact with the counter electrode affect, reduce the efficiency of the rectifier or otherwise reduce the usability of the plates for the stated purpose. This lack is remedied according to the invention that the plate or disk-shaped Electrodes besides the oxidation process an annealing in a vacuum or in an indifferent one Atmosphere. The annealing is conveniently carried out at one temperature made, which is below the temperature at which the oxidation takes place.

Man kann das Ausglühen vor oder nach dem Oxydieren der Platten vornehmen oder auch sowohl vor als auch nach demselben.The annealing can be carried out before or after the plates have been oxidized or both before and after it.

Die zweckmäßigste Glühtemperatur liegt für Kupferscheiben etwa bei 9oo°C. Das Glühen nimmt nur ganz kurze Zeit, d. h. wenige Minuten, in Anspruch.The most appropriate annealing temperature for copper washers is around 900 ° C. The glow takes only a very short time, i.e. H. a few minutes.

Claims (2)

PATENTANSPRÜCHE: I. Verfahren zum Herstellen von Platten-oder scheibenförmigen Elektroden für trokkene Metallgleichrichter, dadurch gekennzeichnet, daß die Platten vor oder nach dem Oxydieren oder sowohl vor als auch nach demselben in einer indifferenten Atmosphäre oder im Vakuum kurze Zeit geglüht werden. PATENT CLAIMS: I. Method of manufacturing plate or disk-shaped Electrodes for dry metal rectifiers, characterized in that the plates before or after the oxidation or both before and after it in an indifferent one Atmosphere or in a vacuum for a short time. 2. Verfahren nach Anspruch I für Elektroden, die aus Kupfer und einer auf diesem erzeugten Kupferoxydulschicht bestehen, dadurch gekennzeichnet, daß die Glühtemperatur bei etwa goo ° C liegt.2. The method according to claim I for electrodes made of copper and a copper oxide layer produced on it exist, characterized in that the annealing temperature is about goo ° C.
DES81488D 1927-09-03 1927-09-04 Process for the production of plate or disk-shaped electrodes for dry metal rectifiers Expired DE487347C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES81488D DE487347C (en) 1927-09-03 1927-09-04 Process for the production of plate or disk-shaped electrodes for dry metal rectifiers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0081488 1927-09-03
DES81488D DE487347C (en) 1927-09-03 1927-09-04 Process for the production of plate or disk-shaped electrodes for dry metal rectifiers

Publications (1)

Publication Number Publication Date
DE487347C true DE487347C (en) 1929-12-05

Family

ID=25996999

Family Applications (1)

Application Number Title Priority Date Filing Date
DES81488D Expired DE487347C (en) 1927-09-03 1927-09-04 Process for the production of plate or disk-shaped electrodes for dry metal rectifiers

Country Status (1)

Country Link
DE (1) DE487347C (en)

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