GB575411A - Improvements in methods of manufacture of selenium elements - Google Patents

Improvements in methods of manufacture of selenium elements

Info

Publication number
GB575411A
GB575411A GB6278/43A GB627843A GB575411A GB 575411 A GB575411 A GB 575411A GB 6278/43 A GB6278/43 A GB 6278/43A GB 627843 A GB627843 A GB 627843A GB 575411 A GB575411 A GB 575411A
Authority
GB
United Kingdom
Prior art keywords
selenium
plate
wafer
base
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6278/43A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB575411A publication Critical patent/GB575411A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

575,411. Light sensitive cells. STANDARD 'TELEPHONES & CABLES, Ltd. April 19, 1943, No. 6278. Convention date, April 24, 1942: [Class 40 (iii)] [Also in Groups II, III and XXXVI] In making a selenium element, such as is employed for electric rectifiers and light-sensitive cells, consisting of a coating of selenium on a base-plate, a single selenium wafer having appropriate thickness and area to produce the desired coating is first formed in a separate operation and the wafer is then placed upon the base-plate and fused thereto by heating the plate. The wafer may be formed by compressing powdered vitreous amorphous selenium between surfaces of a material not injurious to selenium, e.g. mica or aluminium, using a pressure of several thousand pounds per square inch at a temperature of about 120‹ C. It is preferable to make the wafer slightly oversize with respect to the base-plate if a complete covering of the plate is desired. The wafer of vitreous amorphous selenium may be converted into, the grey metallic state by heating it at a temperature of 170-217‹ C., say 200‹ C., before applying it to the plate. It is also possible to use wafers of red amorphous selenium. Fig. 5 shows the application of a preformed selenium wafer 8 to a base-plate 9 provided with a central hole 10 to form a selenium element. Specification 528,296 is referred to.
GB6278/43A 1942-04-24 1943-04-19 Improvements in methods of manufacture of selenium elements Expired GB575411A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US440411A US2403026A (en) 1942-04-24 1942-04-24 Selenium tablet and method of making and applying it

Publications (1)

Publication Number Publication Date
GB575411A true GB575411A (en) 1946-02-18

Family

ID=23748660

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6278/43A Expired GB575411A (en) 1942-04-24 1943-04-19 Improvements in methods of manufacture of selenium elements

Country Status (6)

Country Link
US (1) US2403026A (en)
BE (1) BE467632A (en)
CH (1) CH257868A (en)
ES (1) ES173250A1 (en)
FR (1) FR927074A (en)
GB (1) GB575411A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976655C (en) * 1951-11-24 1964-01-30 Francois Gans Process for the production of photoresist cells from powders of cadmium sulfide, cadmium selenide or cadmium telluride
US3065515A (en) * 1956-04-09 1962-11-27 Leland L Antes Process for making cadmium sulfide photoconducting articles

Also Published As

Publication number Publication date
ES173250A1 (en) 1946-05-16
US2403026A (en) 1946-07-02
FR927074A (en) 1947-10-20
BE467632A (en) 1900-01-01
CH257868A (en) 1948-10-31

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