GB560565A - Method of making selenium coated electrodes - Google Patents

Method of making selenium coated electrodes

Info

Publication number
GB560565A
GB560565A GB3165/43A GB316543A GB560565A GB 560565 A GB560565 A GB 560565A GB 3165/43 A GB3165/43 A GB 3165/43A GB 316543 A GB316543 A GB 316543A GB 560565 A GB560565 A GB 560565A
Authority
GB
United Kingdom
Prior art keywords
selenium
temperature
pressure
rectifiers
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3165/43A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Publication of GB560565A publication Critical patent/GB560565A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Thyristors (AREA)

Abstract

560,565. Selenium rectifiers and lightsensitive cells. STANDARD TELEPHONES & CABLES, Ltd. Feb. 26,1943, No. 3165. Convention date, April 13,1942. Drawings to Specification. [Class 40 (iii)] [Also in Group XXXVI] A selenium coated electrode for rectifiers or light sensitive cells is manufactured by heating a base plate having an adherent coating of selenium to a temperature between 80‹ C. and 120‹ C. for a short time and then applying pressure to the selenium coating while the temperature is raised to a point slightly below the melting point of selenium. This temperature may be between 160‹ C. and 218‹ C., and the pressure may be between 240 and 750 pounds per square inch. The times of the two treatments will vary somewhat according to the temperatures and pressures used. The initial treatment should be long enough to allow a sufficient number of nuclei to form, for example 5 minutes at a temperature of 100‹ C. without pressure. The final treatment may be in some cases only a matter of seconds. The whole treatment is completed in less than one hour. Specification 509,432 is referred to.
GB3165/43A 1942-04-13 1943-02-26 Method of making selenium coated electrodes Expired GB560565A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US438721A US2413013A (en) 1942-04-13 1942-04-13 Method of making selenium rectifiers

Publications (1)

Publication Number Publication Date
GB560565A true GB560565A (en) 1944-04-07

Family

ID=23741752

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3165/43A Expired GB560565A (en) 1942-04-13 1943-02-26 Method of making selenium coated electrodes

Country Status (2)

Country Link
US (1) US2413013A (en)
GB (1) GB560565A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2575392A (en) * 1947-12-11 1951-11-20 Vickers Inc Method of annealing a selenium coating
US2599478A (en) * 1948-03-15 1952-06-03 Vickers Inc Apparatus for making devices which have selenium as constituent parts thereof
DE925847C (en) * 1949-10-31 1955-03-31 Licentia Gmbh Method of manufacturing selenium rectifiers
US2629039A (en) * 1950-06-07 1953-02-17 Weston Electrical Instr Corp Selenium cell and process for manufacturing the same
US2788296A (en) * 1951-11-15 1957-04-09 Myron A Coler Method of applying an electrically conductive transparent coating to a nonconductivebase
US2840960A (en) * 1956-10-22 1958-07-01 Sheldon M Booth Liquid feed for a grinding wheel

Also Published As

Publication number Publication date
US2413013A (en) 1946-12-24

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