US2498240A - Selenium rectifier - Google Patents

Selenium rectifier Download PDF

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Publication number
US2498240A
US2498240A US34043A US3404348A US2498240A US 2498240 A US2498240 A US 2498240A US 34043 A US34043 A US 34043A US 3404348 A US3404348 A US 3404348A US 2498240 A US2498240 A US 2498240A
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United States
Prior art keywords
selenium
rectifier
cadmium
counter
electrode
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Expired - Lifetime
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US34043A
Inventor
Wayne E Blackburn
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CBS Corp
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Westinghouse Electric Corp
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Filing date
Publication date
Priority to FR963374D priority Critical patent/FR963374A/fr
Priority to BE481153D priority patent/BE481153A/xx
Priority claimed from US735883A external-priority patent/US2496692A/en
Priority to GB2695/48A priority patent/GB632135A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to US34043A priority patent/US2498240A/en
Application granted granted Critical
Publication of US2498240A publication Critical patent/US2498240A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/04—Display arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

Definitions

  • My invention relates to selenium rectiers and, in particular, to a counter-electrode which produces an improved barrier layer, or rectifying interface in such rectiers. It is based on the discovery that an improved rectifying ratio at a surface of selenium, or particularly a seleniumcadmium sulphide surface, is obtained by employing a counter-electrode of cadmium, or cadmium-tin, to which have been made small additions of gallium, boron, cerium selenide, columbium oxide or a metal from the alkali or alkaline-earth groups.
  • One object of my invention is, accordingly, to produce an improved selenium rectifier.
  • Another object of my invention is to produce a dry-contact type rectifier having a better rectiiication layer than rectifers of the prior art.
  • Stili another object of my invention is to provide a dry-contact type rectifier of the type employing selenium surfaced with cadmium sulphide with a counter-electrode which improves the barrier layer of the rectifier.
  • a yet further object of my invention is to provide an improved type of counter-electrode for rectiners of the selenium type.
  • Figure 1 is a mid-section and Fig. 2 a top view of a rectifier embodying the principles of my invention.
  • a rectier in accordance with my invention may be produced by employing a backing plate l of steel, which may have a central hole 2 and which has preferably been sand-blasted and nickel-plated.
  • This plate is coated with a layer 3 of amorphous selenium by dipping it in a molten bath of selenium and throwing off the excess thereof by centrifugal force.
  • the free surface of the selenium is then coated by evaporation and condensation with a thin layer I of cadmium sul- 1 Claim.y (Cl. 175-366) 2 phide.
  • This procedure may be carried out as described in more detail in my copending application, Serial No. 514,371, filed December 15, 1943,
  • the unit thus produced may then be annealed at a temperature of 185 C., andthe counterelectrode 5 then applied by Schoop-spraying or other suitable process known in the art. While I have described the selenium as coated with cadmium sulphide before the application of this counter-electrode, for certain purposes it may be suitable to omit the coating with cadmium sulphide. Furthermore, it is within the scope of my invention to apply the counter-electrode before carrying out the annealing process mentioned above.
  • the counter-electrode is formed from an alloy or aggregate comprising substantially '10 parts cadmium, 30 parts tin, with the addition of a small amount, about 1 part of one or more substances from the following group: an alkali or alkaline-earth metal, gallium, boron, cerium selenide and columbium oxide.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
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  • Photoreceptors In Electrophotography (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Description

Feb. 2l, 1950 w. E. BLACKBURN 2,498,240
SELENIUM RECTIFIER original Filed' Maron 2o, 1947 Ffgl.
Cadmium M/a//Me/a/ 4l/a y Cad/Tlam .dloh/de Se/en/'um WITNESSES: INVENTOR //-Wj/ Way/7e EB/acA/burn,
ZW BY ATTORNE Patented F eb. 21, 1950 UNITED STATES PATENT OFFICE SELENIUM RECTIFIER Original application March 20, 1947, Serial No. 735,883. Divided and this application June 19, 1948, Serial No. 34,043
My invention relates to selenium rectiers and, in particular, to a counter-electrode which produces an improved barrier layer, or rectifying interface in such rectiers. It is based on the discovery that an improved rectifying ratio at a surface of selenium, or particularly a seleniumcadmium sulphide surface, is obtained by employing a counter-electrode of cadmium, or cadmium-tin, to which have been made small additions of gallium, boron, cerium selenide, columbium oxide or a metal from the alkali or alkaline-earth groups.
This application is a division of my application Serial No. 735,883 for Selenium rectifiers filed March 20, 1947.
One object of my invention is, accordingly, to produce an improved selenium rectifier.
Another object of my invention is to produce a dry-contact type rectifier having a better rectiiication layer than rectifers of the prior art.
Stili another object of my invention is to provide a dry-contact type rectifier of the type employing selenium surfaced with cadmium sulphide with a counter-electrode which improves the barrier layer of the rectifier.
A yet further object of my invention is to provide an improved type of counter-electrode for rectiners of the selenium type.
Other objects of my invention will become apparent upon reading the following description, taken in connection with the drawing, in which:
Figure 1 is a mid-section and Fig. 2 a top view of a rectifier embodying the principles of my invention.
Referring in detail to Figs. 1 and 2, a rectier in accordance with my invention may be produced by employing a backing plate l of steel, which may have a central hole 2 and which has preferably been sand-blasted and nickel-plated. This plate is coated with a layer 3 of amorphous selenium by dipping it in a molten bath of selenium and throwing off the excess thereof by centrifugal force. The free surface of the selenium is then coated by evaporation and condensation with a thin layer I of cadmium sul- 1 Claim.y (Cl. 175-366) 2 phide. This procedure may be carried out as described in more detail in my copending application, Serial No. 514,371, filed December 15, 1943,
now Patent No. 2,488,369, issued November 15,`
The unit thus produced may then be annealed at a temperature of 185 C., andthe counterelectrode 5 then applied by Schoop-spraying or other suitable process known in the art. While I have described the selenium as coated with cadmium sulphide before the application of this counter-electrode, for certain purposes it may be suitable to omit the coating with cadmium sulphide. Furthermore, it is within the scope of my invention to apply the counter-electrode before carrying out the annealing process mentioned above.
The counter-electrode is formed from an alloy or aggregate comprising substantially '10 parts cadmium, 30 parts tin, with the addition of a small amount, about 1 part of one or more substances from the following group: an alkali or alkaline-earth metal, gallium, boron, cerium selenide and columbium oxide.
Of the addition agents just listed, I have found cadmium and an alkali metal.
WAYNE BLACKBURN.
REFERENCES CITED The following references are of record in the 4o ille of this patent:
UNITED STATES PATENTS Name Date Thompson et al. Mar. 9. 1948 Number
US34043A 1947-03-20 1948-06-19 Selenium rectifier Expired - Lifetime US2498240A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR963374D FR963374A (en) 1947-03-20
BE481153D BE481153A (en) 1947-03-20
GB2695/48A GB632135A (en) 1947-03-20 1948-01-29 Improvements in or relating to selenium rectifiers
US34043A US2498240A (en) 1947-03-20 1948-06-19 Selenium rectifier

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US735883A US2496692A (en) 1947-03-20 1947-03-20 Selenium rectifier
US34043A US2498240A (en) 1947-03-20 1948-06-19 Selenium rectifier

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BE (1) BE481153A (en)
FR (1) FR963374A (en)
GB (1) GB632135A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973817C (en) * 1951-03-05 1960-06-15 Licentia Gmbh Method of manufacturing a dry rectifier
DE1097573B (en) * 1954-07-08 1961-01-19 Vickers Inc Selenium semiconductor device and process for its production
US3127545A (en) * 1960-12-23 1964-03-31 Gen Telephone & Elect Rectifier

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2437336A (en) * 1944-03-02 1948-03-09 Union Switch & Signal Co Alternating electric current rectifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2437336A (en) * 1944-03-02 1948-03-09 Union Switch & Signal Co Alternating electric current rectifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973817C (en) * 1951-03-05 1960-06-15 Licentia Gmbh Method of manufacturing a dry rectifier
DE1097573B (en) * 1954-07-08 1961-01-19 Vickers Inc Selenium semiconductor device and process for its production
US3127545A (en) * 1960-12-23 1964-03-31 Gen Telephone & Elect Rectifier

Also Published As

Publication number Publication date
FR963374A (en) 1950-07-06
BE481153A (en) 1900-01-01
GB632135A (en) 1949-11-16

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