US2137428A - Electrode system of unsymmetrical conductivity - Google Patents

Electrode system of unsymmetrical conductivity Download PDF

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US2137428A
US2137428A US67053A US6705336A US2137428A US 2137428 A US2137428 A US 2137428A US 67053 A US67053 A US 67053A US 6705336 A US6705336 A US 6705336A US 2137428 A US2137428 A US 2137428A
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selenium
electrode
layer
conductivity
thickness
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US67053A
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Willem Christiaan Van Geel
Emmens Hendrik
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Koninklijke Philips NV
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Philips Gloeilampenfabrieken NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/812—Venting

Definitions

  • the invention relates to electrode systems of unsymmetrical conductivity in which one of the electrodes consists for the greater part of selenium and is separated by a. layer of insulating material from the other, well conducting electrode.
  • the invention has for its object to increase in such an electrode system of unsymmetrical conductivity the conductivity of the selenium and to provide an insulating intermediate layer whose thickness may be chosen at will without said layer being acted upon by other substances.
  • the selenium electrode contains for. this purpose conductive substances in finely divided condition so that owing to the intense intermixture they increase the conductivity of the selenium electrode itself while the insulating intermediate layer has been provided as a separate layer independently of the electrode material.
  • blocking layer photocells it has previously been suggested to add metals or their compounds to the selenium in order to increase the conductivity. With these cells one did not obtain of course the advantages of the additions which are afforded by the present invention, for example the exact choice of the thickness of the blocking layer because the provision of a particular intermediate layer is dispensed with (for a blocking layer is automatically produced on the layer of selenium).
  • Conductive materials satisfy the above mentioned requirements for firstly, when finely divided, they highly increasethe conductivity of the selenium.
  • the conductivity may be raised in this way up to a hundredfold, which affords the advantage of an appreciable reduction of the contact surface of the selenium electrode.
  • the presence of conducting substances in selenium hasno effect on the thickness of the blocking layer, even not when the upperfilm of the contact surface is removed by vaporization from the selenium electrode for this just results in that particles of the material added come to the surface. These particles do not increase the thickness of the blocking layer, which would be added.
  • the selenium electrode has, however, a satisfactory conductivity.
  • such an electrode system is particularly suitable for use as a detector.
  • the area of the contact surfaces may be kept small so that, if desired, the self-capacity of such a detector may be very small.
  • the substances to be added are heated in the manufacture of the electrode system, they must retain their conductivity as otherwise at the high temperature to which the selenium (in order to be melted and to be worked) and therefore also the additions are exposed the conductive substances would change into-insulating compounds.
  • the new-formed substances may perhaps have a less favorable influence on the in crease of the conductivity of the semi-conductor, it is more particularly the formation of the blocking layer that plays here a part, for owing to the vaporization of the selenium the insulating substances come to the surface as a more or less non-homogeneous layer while there still remain behind particles of the initial conductive substance. It consequently remains necessary to provide a blocking layer between the contact surfaces of the two electrodes.
  • two blocking layers namely one produced from the chemically converted added substance and the one which has been applied afterwards, one obtains a greater thickness, which has a very unfavorable effect on the operation of the rectifier.
  • Substances suitable for being added to the selenium are, for example, the sulphides of the following metals: lead (PbS), antimony (SbzSa), copper (CuS and CuzS) the nitrides of zirconium (ZrN) and titanium (TiN) and the oxides of vanadium (V203) and cobalt (C0203).
  • the amount by weight of the additions ranges in general from 0.1 to 10% of the amount by weight of the selenium which is present.
  • the additions must have a very small size of grain, to wit a size ranging from 1 to 10 Grains of 0.1, have in general a still more favorable effect on the conductivity.
  • the obtainment of so small a size of grain sometimes involves technical difllculties.
  • an insulating substance having no constituents in common with the electrodes is utilized as the intermediate layer.
  • the separate application of the intermediate layer affords, as has been mentioned before, the advantage that it is possible to control completely the formation of the intermediate layer and to choose at will both the material and the thickness and therefore the capacity.
  • the intermediate layer are particularly suitable, for example, collodion, shellac, paper, a $102 film or water glass. All these substances possess the favorable property of being sufficiently resistant to the mechanical and atmosphericinfiuences and of being sufilciently dense.
  • Artificial resins possess particularly favorable properties as to their use for the intermediate layer. These resins have so high an insulating capacity that a very thin film suffices, which is beneficial to the favorable operation of the rectifier.
  • the substances utilized for the blocking layer may be applied, for example, in a liquid or dissolved condition, for example, by spraying to one of the electrodes until the desired thickness is obtained.
  • the thickness of the blocking layer ranges in general from l-to 100 1. according to the use of the electrode system and to the material employed.
  • the selenium I is supported by a metallic plate 2, for example, of iron.
  • a metallic plate 2 for example, of iron.
  • the blocking layer 3 collodion to which a drop of gold varnish has been applied as the second electrode 4 of satisfactory emitting capacity.
  • a connecting wire 5 In said drop of gold varnish is inserted a connecting wire 5. Owing to the drying of the varnish the electric supply conductor becomes consequently secured electrically as well as mechanically to the elec-' trode of gold varnish.
  • a second electrode composed of finely divided highly conductive material mixed with a binder and a layer of insulating material intermediate the two electrodes.
  • an electrode composed of selenium intimately mixed when in a molten state with a finely divided substance chosen from the group including the sulphides of lead, copper and antimony; the nitrides of zirconium and titanium; and, the oxides of vanadium and cobalt, the proportion of the substance mixed with the selenium being from 0.1 to 10% of the amount by weight of the selenium present, a second electrode composed of gold varnish adjacent the first mentioned electrode and a thin layer of collodion separating the two electrodes.
  • an electrode composed of selenium mixed in an inorganic metallic compound, a second electrode composed of gold varnish adjacent to the first-named electrode and a layer of insulating material intermediate the two electrodes.
  • a dry rectifier having two outside layers separated by a layer of insulating material, one of said outside layers being composed of selenium mixed with an inorganic metallic compound, the other outside layer being composed of a highly conductive metallic varnish.
  • a dry rectifier having two o'utside layers separated by a layer of insulating material, one of the outside layers being composed of selenium mixed with an inorganic metallic compound in a finely divided state, the other outside layer being composed of gold varnish.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Thermistors And Varistors (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Laminated Bodies (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Train Traffic Observation, Control, And Security (AREA)

Description

- Nov. 22,1938. w. C(QANEEEL ET AL 2,137,428
ELECTRODE SYSTEM OF UNSYMMETRICAL CONDUCTIVITY Filed March 4, 195a V IIIIIIIIIIII/l/ll III/IIlIIIIII/III/III/IIIII/IIIII INVENTOR n 6 I444 655A ETAL.
ATTORNEY Patented Nov. 22, 1938 UNITED STATES ELECTRODE SYSTEM OF 'UNSYMMETRICAL CONDUCTIVITY Willem Christiaan van Geel and Hendrik Emmens, Elndhoven,- Netherlands, assignors to N. V.
Philips Gloeilampenfabrieken,
Netherlands Application March 4, In Germany 7 Claims.
The invention relates to electrode systems of unsymmetrical conductivity in which one of the electrodes consists for the greater part of selenium and is separated by a. layer of insulating material from the other, well conducting electrode.
It is known to add metals or compounds to a selenium electrode destined for a dry rectifier in order to increase the rectifying effect.
The invention has for its object to increase in such an electrode system of unsymmetrical conductivity the conductivity of the selenium and to provide an insulating intermediate layer whose thickness may be chosen at will without said layer being acted upon by other substances.
According to the invention, the selenium electrode contains for. this purpose conductive substances in finely divided condition so that owing to the intense intermixture they increase the conductivity of the selenium electrode itself while the insulating intermediate layer has been provided as a separate layer independently of the electrode material.
With blocking layer photocells it has previously been suggested to add metals or their compounds to the selenium in order to increase the conductivity. With these cells one did not obtain of course the advantages of the additions which are afforded by the present invention, for example the exact choice of the thickness of the blocking layer because the provision of a particular intermediate layer is dispensed with (for a blocking layer is automatically produced on the layer of selenium).
Conductive materials satisfy the above mentioned requirements for firstly, when finely divided, they highly increasethe conductivity of the selenium. The conductivity may be raised in this way up to a hundredfold, which affords the advantage of an appreciable reduction of the contact surface of the selenium electrode. Besides, the presence of conducting substances in selenium hasno effect on the thickness of the blocking layer, even not when the upperfilm of the contact surface is removed by vaporization from the selenium electrode for this just results in that particles of the material added come to the surface. These particles do not increase the thickness of the blocking layer, which would be added. As far as the blocking layer is concerned, the selenium electrode has, however, a satisfactory conductivity.
Consequently, if there, are conductive sub- 56 stances the above mentioned requirement for the the case if non-conducting substances were Eindhoven,
1936, Serial No. 67,053 March 11, 1935 realization of the object of the invention is satisfied, namely the adequate choice of the thickness of the blocking layer which is separately I applied.
This is of importance because thus it is possible in any particular case in which use is made of an electrode system according to the invention, to choose the minimum thickness, which materially improves the operation as the thickness of the blocking layer determines the electric field strength between the electrodes. Besides, one is enabled to control the value of the capacity of the system by giving the blocking layer any desired thickness.
Owing to the said favourable properties, such an electrode system is particularly suitable for use as a detector. Owing to the satisfactory conductivity, the area of the contact surfaces may be kept small so that, if desired, the self-capacity of such a detector may be very small.
At the temperatures to which the substances to be added are heated in the manufacture of the electrode system, they must retain their conductivity as otherwise at the high temperature to which the selenium (in order to be melted and to be worked) and therefore also the additions are exposed the conductive substances would change into-insulating compounds. Besides, the fact that the new-formed substances may perhaps have a less favorable influence on the in crease of the conductivity of the semi-conductor, it is more particularly the formation of the blocking layer that plays here a part, for owing to the vaporization of the selenium the insulating substances come to the surface as a more or less non-homogeneous layer while there still remain behind particles of the initial conductive substance. It consequently remains necessary to provide a blocking layer between the contact surfaces of the two electrodes. As in this case there are, however, two blocking layers, namely one produced from the chemically converted added substance and the one which has been applied afterwards, one obtains a greater thickness, which has a very unfavorable effect on the operation of the rectifier.
Substances suitable for being added to the selenium are, for example, the sulphides of the following metals: lead (PbS), antimony (SbzSa), copper (CuS and CuzS) the nitrides of zirconium (ZrN) and titanium (TiN) and the oxides of vanadium (V203) and cobalt (C0203).
The amount by weight of the additions ranges in general from 0.1 to 10% of the amount by weight of the selenium which is present.
In order to ensure an operation which is as advantageous as possible, the additions must have a very small size of grain, to wit a size ranging from 1 to 10 Grains of 0.1, have in general a still more favorable effect on the conductivity. However, the obtainment of so small a size of grain sometimes involves technical difllculties.
In one favorable mode of execution an insulating substance having no constituents in common with the electrodes is utilized as the intermediate layer.
The separate application of the intermediate layer affords, as has been mentioned before, the advantage that it is possible to control completely the formation of the intermediate layer and to choose at will both the material and the thickness and therefore the capacity. For the intermediate layer are particularly suitable, for example, collodion, shellac, paper, a $102 film or water glass. All these substances possess the favorable property of being sufficiently resistant to the mechanical and atmosphericinfiuences and of being sufilciently dense.
Artificial resins possess particularly favorable properties as to their use for the intermediate layer. These resins have so high an insulating capacity that a very thin film suffices, which is beneficial to the favorable operation of the rectifier. The substances utilized for the blocking layer may be applied, for example, in a liquid or dissolved condition, for example, by spraying to one of the electrodes until the desired thickness is obtained. The thickness of the blocking layer ranges in general from l-to 100 1. according to the use of the electrode system and to the material employed.
As example of realization reference may be made to the method described hereafter.
To molten selenium is added about 5% by weight of lead sulphide (PbS) in pulverized condit-ion (size of grain about l The mixture is spread out on an iron plate to a thickness of about 100; and then it is heated in a furnace to 200 C. for a few hours. After cooling a solution of nitrocellulose in amylacetate is applied to the selenium surface and dried. The blocking layer thus fo med has a thickness of about 2 1;. The other electrode is formed on said layer by applying so-called gold varnish in which a supply conductor is taken up.
Theinvention will be explained more fully with reference to the accompanying drawing which represents, by way of example, one embodiment thereof.
The selenium I is supported by a metallic plate 2, for example, of iron. As the blocking layer 3 is utilized collodion to which a drop of gold varnish has been applied as the second electrode 4 of satisfactory emitting capacity. In said drop of gold varnish is inserted a connecting wire 5. Owing to the drying of the varnish the electric supply conductor becomes consequently secured electrically as well as mechanically to the elec-' trode of gold varnish.
We claim: 1. In an electrode system, an electrode com;-
posed of selenium mixed with an inorganic metallic compound, a second electrode composed of finely divided highly conductive material mixed with a binder and a layer of insulating material intermediate the two electrodes.
2. In an unsymmetrical conductor device an electrodecomposed of selenium mixed with at least one of the inorganic metallic compounds in the group including the sulphides of lead, copper and antimony; the nitrides of zirconium and titanium; and, the oxides of vanadium and cobalt, to increase the conductivity of the selenium, a second electrode composed of gold varnish adjacent the first named electrode, said two electrodes being separated by a layer of insulating material.
3. In an unsymmetrical conductor device, an electrode composed of selenium intimately mixed when in a molten state with a finely divided substance chosen from the group including the sulphides of lead, copper and antimony; the nitrides of zirconium and titanium; and, the oxides of vanadium and cobalt, the proportion of the substance mixed with the selenium being from 0.1 to 10% of the amount by weight of the selenium present, a second electrode composed of gold varnish adjacent the first mentioned electrode and a thin layer of collodion separating the two electrodes. I v
4. The process of making an unsymmetrical conductor device which comprises melting selenium by the application of heat thereto, adding and intimately mixing to the molten selenium about 5% by weight of a pulverized substance chosen from the group including the sulphides of lead, copper and antimony; the nitrides of zirconium and titanium; and, the oxides of vanadium and cobalt, spreading out the resulting mixture on a plate to a thickness of about 100 and then heating the mixture to about 200 C. for several hours, thereafter cooling the mixture, applying a solution of nitrocellulose in amylacetate to the surface of the cooled mixture and drying the same, thereafter applying a drop of gold varnish to the coated surface and drying the varnish.
5. In an electrode system, an electrode composed of selenium mixed in an inorganic metallic compound, a second electrode composed of gold varnish adjacent to the first-named electrode and a layer of insulating material intermediate the two electrodes.
6. A dry rectifier having two outside layers separated by a layer of insulating material, one of said outside layers being composed of selenium mixed with an inorganic metallic compound, the other outside layer being composed of a highly conductive metallic varnish.
'7. A dry rectifier having two o'utside layers separated by a layer of insulating material, one of the outside layers being composed of selenium mixed with an inorganic metallic compound in a finely divided state, the other outside layer being composed of gold varnish.
WILLEM CHRISTIAAN VAN GEEL. HENDRIX EMMENS.
US67053A 1930-05-15 1936-03-04 Electrode system of unsymmetrical conductivity Expired - Lifetime US2137428A (en)

Applications Claiming Priority (2)

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NL378444X 1930-05-15
DEN37878A DE712674C (en) 1930-05-15 1935-03-11 Process for the production of electrode systems with asymmetrical conductivity

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US534358A Expired - Lifetime US2002221A (en) 1930-05-15 1931-05-01 Dry rectifier
US67053A Expired - Lifetime US2137428A (en) 1930-05-15 1936-03-04 Electrode system of unsymmetrical conductivity

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US534358A Expired - Lifetime US2002221A (en) 1930-05-15 1931-05-01 Dry rectifier

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BE (2) BE379606A (en)
DE (2) DE681108C (en)
FR (2) FR716615A (en)
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NL (1) NL32845C (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2433402A (en) * 1942-07-02 1947-12-30 Standard Telephones Cables Ltd Selenium cell and lacquer therefor
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2458013A (en) * 1944-03-04 1949-01-04 Asea Ab Selenium rectifier element and method of manufacturing same
US2473884A (en) * 1946-05-07 1949-06-21 Westinghouse Electric Corp Contact means
US2622116A (en) * 1950-05-13 1952-12-16 Edward B Gregg Thermoelectric device
US2694168A (en) * 1950-03-31 1954-11-09 Hughes Aircraft Co Glass-sealed semiconductor crystal device
US2761095A (en) * 1952-12-08 1956-08-28 Fansteel Metallurgical Corp Selenium rectifier
US2774747A (en) * 1951-04-05 1956-12-18 Int Standard Electric Corp Electrically conducting cements containing epoxy resins and silver
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
DE974915C (en) * 1953-05-02 1961-05-31 Standard Elek K Lorenz Ag Process for the production of selenium rectifiers with a layer of varnish between selenium and cover electrode for use for control purposes
DE1181822B (en) * 1954-11-29 1964-11-19 Standard Elektrik Lorenz Ag Process for the manufacture of selenium rectifiers

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976574C (en) * 1939-10-17 1963-11-21 Standard Elek K Lorenz Ag Process for the manufacture of dry rectifier plates
NL77928C (en) * 1941-06-26
DE970124C (en) * 1944-01-17 1958-09-04 Siemens Ag Process for the manufacture of selenium rectifiers
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same
DE975284C (en) * 1954-02-19 1961-11-02 Licentia Gmbh Selenium rectifier with a ring-shaped insulating piece applied to the selenium layer or to the carrier electrode
DE1295700B (en) * 1964-03-25 1969-05-22 Licentia Gmbh Selenium rectifiers
DE3110153A1 (en) * 1980-03-28 1982-05-13 Berthold H. Dr. 5630 Remscheid Daimler Method and device for storing energy

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2433402A (en) * 1942-07-02 1947-12-30 Standard Telephones Cables Ltd Selenium cell and lacquer therefor
US2458013A (en) * 1944-03-04 1949-01-04 Asea Ab Selenium rectifier element and method of manufacturing same
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2473884A (en) * 1946-05-07 1949-06-21 Westinghouse Electric Corp Contact means
US2694168A (en) * 1950-03-31 1954-11-09 Hughes Aircraft Co Glass-sealed semiconductor crystal device
US2622116A (en) * 1950-05-13 1952-12-16 Edward B Gregg Thermoelectric device
US2774747A (en) * 1951-04-05 1956-12-18 Int Standard Electric Corp Electrically conducting cements containing epoxy resins and silver
US2761095A (en) * 1952-12-08 1956-08-28 Fansteel Metallurgical Corp Selenium rectifier
DE974915C (en) * 1953-05-02 1961-05-31 Standard Elek K Lorenz Ag Process for the production of selenium rectifiers with a layer of varnish between selenium and cover electrode for use for control purposes
DE1181822B (en) * 1954-11-29 1964-11-19 Standard Elektrik Lorenz Ag Process for the manufacture of selenium rectifiers
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same

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FR716615A (en) 1931-12-24
US2002221A (en) 1935-05-21
USB469610I5 (en)
FR47181E (en) 1937-02-06
DE712674C (en) 1941-10-23
NL32845C (en) 1934-06-15
BE414231A (en)
BE379606A (en) 1931-06-30
GB378444A (en) 1932-08-08
DE681108C (en) 1939-09-14
GB469610A (en) 1937-07-26

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