GB378444A - Improvements in or relating to dry rectifiers - Google Patents

Improvements in or relating to dry rectifiers

Info

Publication number
GB378444A
GB378444A GB13452/31A GB1345231A GB378444A GB 378444 A GB378444 A GB 378444A GB 13452/31 A GB13452/31 A GB 13452/31A GB 1345231 A GB1345231 A GB 1345231A GB 378444 A GB378444 A GB 378444A
Authority
GB
United Kingdom
Prior art keywords
projected
substances
intermediate layer
copper
emissive power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13452/31A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB378444A publication Critical patent/GB378444A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/812—Venting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Thermistors And Varistors (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Laminated Bodies (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Train Traffic Observation, Control, And Security (AREA)

Abstract

378,444. Static contact rectifiers. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN, 13D, Emmasingel, Eindhoven, Holland. May 6, 1931, No. 13452. Convention date, May 15, 1930. Drawings to Specification. [Class 37.] A rectifier wherein each cell comprises two substances of different electron emissive power has an intermediate layer formed independently of the substances and comprising a non- conductive solid material. The intermediate layer which may be smeared or projected on to either of the adjacent substances may consist of a very thin plate or strip of artificial resin, lacquer, collodion or silicious varnish. An intermediate layer of material known under the Trade Mark " Bakelite " about 0À001 mm. thick, or a lacquer layer of 0À0001 to 0À01 mm. may be employed. The insulating layer projected on a metal of good emissive power may have in turn a metal of low emissive power projected thereon. A number of cell units can thus be constructed in series or parallel relationship. The cell plates may be centrally apertured and clamped between endplates. Copper, zirconium, titanium, hafnium, or thorium may constitute the cathode, and copper, lead, molybdenum, tungsten or iron sulphides, copper iodide or silver chloride with free iodine, iron scale, manganese or cadmium oxide, or lead dioxide the anode.
GB13452/31A 1930-05-15 1931-05-06 Improvements in or relating to dry rectifiers Expired GB378444A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL378444X 1930-05-15
DEN37878A DE712674C (en) 1930-05-15 1935-03-11 Process for the production of electrode systems with asymmetrical conductivity

Publications (1)

Publication Number Publication Date
GB378444A true GB378444A (en) 1932-08-08

Family

ID=25989175

Family Applications (2)

Application Number Title Priority Date Filing Date
GB13452/31A Expired GB378444A (en) 1930-05-15 1931-05-06 Improvements in or relating to dry rectifiers
GB2288/36A Expired GB469610A (en) 1930-05-15 1936-01-24 Improvements in or relating to dry electric rectifiers

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2288/36A Expired GB469610A (en) 1930-05-15 1936-01-24 Improvements in or relating to dry electric rectifiers

Country Status (6)

Country Link
US (3) US2002221A (en)
BE (2) BE379606A (en)
DE (2) DE681108C (en)
FR (2) FR716615A (en)
GB (2) GB378444A (en)
NL (1) NL32845C (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976574C (en) * 1939-10-17 1963-11-21 Standard Elek K Lorenz Ag Process for the manufacture of dry rectifier plates
NL77928C (en) * 1941-06-26
BE478832A (en) * 1942-07-02 1900-01-01
DE970124C (en) * 1944-01-17 1958-09-04 Siemens Ag Process for the manufacture of selenium rectifiers
NL79203C (en) * 1944-03-04
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2473884A (en) * 1946-05-07 1949-06-21 Westinghouse Electric Corp Contact means
NL160163B (en) * 1950-03-31 Staley Mfg Co A E METHOD OF MANUFACTURE OF TABLETS.
US2622116A (en) * 1950-05-13 1952-12-16 Edward B Gregg Thermoelectric device
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same
BE510386A (en) * 1951-04-05 1900-01-01
US2761095A (en) * 1952-12-08 1956-08-28 Fansteel Metallurgical Corp Selenium rectifier
DE974915C (en) * 1953-05-02 1961-05-31 Standard Elek K Lorenz Ag Process for the production of selenium rectifiers with a layer of varnish between selenium and cover electrode for use for control purposes
DE975284C (en) * 1954-02-19 1961-11-02 Licentia Gmbh Selenium rectifier with a ring-shaped insulating piece applied to the selenium layer or to the carrier electrode
BE561533A (en) * 1954-11-29
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
DE1295700B (en) * 1964-03-25 1969-05-22 Licentia Gmbh Selenium rectifiers
DE3110153A1 (en) * 1980-03-28 1982-05-13 Berthold H. Dr. 5630 Remscheid Daimler Method and device for storing energy

Also Published As

Publication number Publication date
GB469610A (en) 1937-07-26
NL32845C (en) 1934-06-15
USB469610I5 (en)
DE712674C (en) 1941-10-23
FR47181E (en) 1937-02-06
BE379606A (en) 1931-06-30
US2002221A (en) 1935-05-21
US2137428A (en) 1938-11-22
FR716615A (en) 1931-12-24
DE681108C (en) 1939-09-14
BE414231A (en)

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