GB458889A - Improvements in or relating to dry electric rectifiers - Google Patents

Improvements in or relating to dry electric rectifiers

Info

Publication number
GB458889A
GB458889A GB8632/36A GB863236A GB458889A GB 458889 A GB458889 A GB 458889A GB 8632/36 A GB8632/36 A GB 8632/36A GB 863236 A GB863236 A GB 863236A GB 458889 A GB458889 A GB 458889A
Authority
GB
United Kingdom
Prior art keywords
layer
semi
electrode
selenium
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8632/36A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB458889A publication Critical patent/GB458889A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Laminated Bodies (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

458,889. Static contact rectifiers. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN, Emmasingel, Eindhoven, Holland. March 23, 1936, No. 8632. Convention date, June 1, 1935. Drawings to Specification. [Class 37] In a rectifier comprising two electrodes of different electron-emissive power separated by a thin intermediate layer of solid non- conducting material, an additional layer of specific resistance higher than that of the semi-conductor, or electrode of lower emissivepower, is interposed between this electrode and the nonconducting layer. This additional layer preferably comprises a substance containing at least one of the ingredients from which the semi-conducting electrode is made. Thus in a rectifier using cuprous oxide, as the semi conductor, the surface is reduced or electrically treated to form a layer of higher specific resistance In another example silver sulphide is superficially treated with sulphur. In a selenium-aluminium oxide compound plate the selenium in the surface layer may be removed by volatilization giving a thin, more highly resistant layer. Specification 378,444 is referred to.
GB8632/36A 1935-06-01 1936-03-23 Improvements in or relating to dry electric rectifiers Expired GB458889A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201096X 1935-06-01

Publications (1)

Publication Number Publication Date
GB458889A true GB458889A (en) 1936-12-29

Family

ID=5764497

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8632/36A Expired GB458889A (en) 1935-06-01 1936-03-23 Improvements in or relating to dry electric rectifiers

Country Status (5)

Country Link
AT (1) AT150558B (en)
CH (1) CH201096A (en)
FR (1) FR806927A (en)
GB (1) GB458889A (en)
NL (1) NL47694C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE757222C (en) * 1939-02-04 1954-02-08 Elektrowerk G M B H Selenium dry rectifier with heavy metal carrier electrode
BE478832A (en) * 1942-07-02 1900-01-01
US2750544A (en) * 1950-01-11 1956-06-12 Bell Telephone Labor Inc Silicon translating devices and methods of manufacture
DE968592C (en) * 1950-07-15 1958-03-06 Siemens Ag Process for achieving surface states suitable for transistors, detectors or the like on semiconductors, for example germanium with the exception of selenium

Also Published As

Publication number Publication date
CH201096A (en) 1938-11-15
FR806927A (en) 1936-12-29
AT150558B (en) 1937-09-10
NL47694C (en)

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