US1994632A - Asymmetric conductor - Google Patents
Asymmetric conductor Download PDFInfo
- Publication number
- US1994632A US1994632A US670505A US67050533A US1994632A US 1994632 A US1994632 A US 1994632A US 670505 A US670505 A US 670505A US 67050533 A US67050533 A US 67050533A US 1994632 A US1994632 A US 1994632A
- Authority
- US
- United States
- Prior art keywords
- conductor
- film
- disc
- semi
- asymmetric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 title description 14
- 239000010408 film Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 125000004354 sulfur functional group Chemical group 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Definitions
- This invention relates'to asymmetric conductors of electricity, that-is to say, to conductors which oifer relatively low resistance to current flowing in one direction, but relatively high resistance to current flowing in the other direction, the currents through which, in either direction, need not obey Ohms law.
- An object of this invention is to enable the rectification of electrical curren
- a feature of this invention comprises forming an asymmetric conductor or a rectifier by proper association of a semi-conductor, a thin film of a material of higher resistivity than the semiconductor, and means for making contact with one surface of the semi-conductor and one surface of the film.
- Another featured this invention comprises a rectifier having a high resistance film at its rectifying junction, the film not being initially formed by drawing current, nor formed by the production on a metal plate of a compound of that metal.
- a further feature of this invention comprises an asymmetric conductor or rectifier of a semiconductor material in the shape of a disc or plate, one surface of the plate being cleaned, preferably by etching, and having a film of a material of higher resistivity thereagainst, a metal making intimate contact with the outer surface of the film, and a metal making intimate contact with the other surface of the plate.
- Fig. 1 is a side view of a device embodying this invention
- Fig. 2 is a plan view of the device of Fig. 1 with portions thereof broken away;
- Fig. 3 is an elevational 40 bodiment of the invention.
- an asymmetric conductor or electrical rectifier comprising a disc or plate 11 of a semiconducting material, for instance, cuprcus oxide, silicon carbide, lead sulphide, zinc oxide, selenium or tellurium, or more generally, an oxide, 9. sulphide, a. selenide or a telluride of a metal.
- a surface 12 of the disc is cleaned, preferably by etching, either an acid or an alkali being satisfactory, and has applied to it, either by adsorption, by drying from .a solution, by evaporation, or by any other suitable means, a thin film 13 of a material of relatively higher resistivity than the semi-conductor.
- This film may be, for instance, of-sheliac. sulphur, wax, or quartz.
- the combination of a semi-conductor and'film ofa material of higher resistivity is in and of itself an asymmetric conductor but the contact members are required to connect it into an electrical circuit.
- the latter may constitute a layer of adsorbed air.
- Fig.3 is disclosed an arrangement in which such an air film, as well as films of the other materials recited, may be used.
- the disc 11 having thereon the film 13 is mounted within a tube 16 of insulating material, for instance, of glass, and divides it into two compartments 17, 17, each containing mercury 18 making intimate metallic contact with each surface of the asymmetric unit.
- the rectifier of Fig. 3 may be connected in an electrical circuit by the sealed-in conductors 19, 19.
- a rectifier comprising a semi-conductor, said semi-conductor being a disc of silicon carbide, a film of an insulating material of relatively higher resistivity than said carbide on one sur- 35 face thereof, a metal making intimate contact with the outer surface of said film, and a metal making contact with the other side of said semiconductor.
- a rectifier comprising a disc of lead sulphide, a film of wax on one surface of said disc, a metal making contact with the outer surface of the film, and a metal making contact with the other surface of said disc.
- a rectifier comprising a disc of silicon carbide, a film of wax on one surface of said disc, a metal making contact with the outer surface of the film, and a metal making contact with the other surface of said disc.
- a rectifier consisting of a semi-conductor 50 in the shape of a plate of a material of the group consisting of. selenium, tellurium, a compound of an element of the sulphur group, and silicon carbide,..one surface of said plate being etched,
- a film f an insulating material of higher re- 55 sistivity. than said semi-conductor covering the etched surface, a metal making intimate contact the film, and a metal the other surface with the outer surface of making intimate contact with of the plate.
- the method of making a device in and of itself an asymmetric conductor which comprises etching one surface of a disc of a semi-conductor of the group consisting of selenium, tellurium, a compound of an element of the sulphur group, and silicon carbide, and forming a film of an insulating material of relatively higher resistivity than said semi-conductor on said etched surface.
- An asymmetric conductor consisting of a semi-conductor in the shape of a disc, a film of an insulating material of higher resistivity than said semi-conductor on one surface of said disc, and mercury in intimate contact directly with said film and the other surface of the disc.
- An electrically conductive device consisting of a semi-conductor in the shape of a plate or disc of the. group consisting of selenium, tellurium, a compound of an element of the sulphur group, and silicon carbide, and a film of an insulating material of relatively higher resistivity than said semi-conductor on one surface thereof.
- a device in and of itself a rectifier-consisting of a disc of cuprous oxide having a of 20 wax on one surface thereof.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
Description
March 19, 1935 J: A. BECKER 1,994,632
ASYMMETRIC CONDUCTOR Filed May 11, 1935' INVENTOH By JAREQfi-l? Patented Mar. 19, 1935 ASYMMETRIC CONDUCTOR Joseph A. Becker, Mountain Lakes, N. J assignor to Bell Telephone Laboratories,
Incorporated,
New York, N. Y., a corporation of New York Application May 11, 1933, Serial No. 670,505 10 Claims. (Cl. 175366) This invention relates'to asymmetric conductors of electricity, that-is to say, to conductors which oifer relatively low resistance to current flowing in one direction, but relatively high resistance to current flowing in the other direction, the currents through which, in either direction, need not obey Ohms law.
An object of this invention is to enable the rectification of electrical curren A feature of this invention comprises forming an asymmetric conductor or a rectifier by proper association of a semi-conductor, a thin film of a material of higher resistivity than the semiconductor, and means for making contact with one surface of the semi-conductor and one surface of the film.
Another featured this invention comprises a rectifier having a high resistance film at its rectifying junction, the film not being initially formed by drawing current, nor formed by the production on a metal plate of a compound of that metal.
A further feature of this invention comprises an asymmetric conductor or rectifier of a semiconductor material in the shape of a disc or plate, one surface of the plate being cleaned, preferably by etching, and having a film of a material of higher resistivity thereagainst, a metal making intimate contact with the outer surface of the film, and a metal making intimate contact with the other surface of the plate.
A more complete understanding of this invention will be'derived from the detailed description which follows-read with reference to the appended drawing, wherein:
Fig. 1 is a side view of a device embodying this invention;
Fig. 2 is a plan view of the device of Fig. 1 with portions thereof broken away; and
Fig. 3 is an elevational 40 bodiment of the invention.
In Figs. 1 and 2, there is shown an asymmetric conductor or electrical rectifier, designated generally 10, comprising a disc or plate 11 of a semiconducting material, for instance, cuprcus oxide, silicon carbide, lead sulphide, zinc oxide, selenium or tellurium, or more generally, an oxide, 9. sulphide, a. selenide or a telluride of a metal. A surface 12 of the disc is cleaned, preferably by etching, either an acid or an alkali being satisfactory, and has applied to it, either by adsorption, by drying from .a solution, by evaporation, or by any other suitable means, a thin film 13 of a material of relatively higher resistivity than the semi-conductor. This film may be, for instance, of-sheliac. sulphur, wax, or quartz. A contact view of another em plate or member 14 of any suitable material, such as lead or tin, makes intimate contact with the upper or outer surface of the film, and a contact plate or member 15 of similar material makes intimate contact with the lower, other or unfilmed 5 surface of the disc 11. The combination of a semi-conductor and'film ofa material of higher resistivity is in and of itself an asymmetric conductor but the contact members are required to connect it into an electrical circuit. Furthermore, if a sufiiciently intimate contact is provided for the outer surface of the film, the latter may constitute a layer of adsorbed air.
In Fig.3, is disclosed an arrangement in which such an air film, as well as films of the other materials recited, may be used. The disc 11 having thereon the film 13 is mounted within a tube 16 of insulating material, for instance, of glass, and divides it into two compartments 17, 17, each containing mercury 18 making intimate metallic contact with each surface of the asymmetric unit. The rectifier of Fig. 3 may be connected in an electrical circuit by the sealed-in conductors 19, 19.
Although this invention has been disclosed with reference to specific embodiments thereof, it is to be understood that various modifications therein may be made without departing from the spirit of this invention, the scope of which is to be considered limited by the appended claims only.
What is claimed is:
1. A rectifier comprising a semi-conductor, said semi-conductor being a disc of silicon carbide, a film of an insulating material of relatively higher resistivity than said carbide on one sur- 35 face thereof, a metal making intimate contact with the outer surface of said film, and a metal making contact with the other side of said semiconductor.
2. A rectifier comprising a disc of lead sulphide, a film of wax on one surface of said disc, a metal making contact with the outer surface of the film, and a metal making contact with the other surface of said disc.
3. A rectifier comprising a disc of silicon carbide, a film of wax on one surface of said disc, a metal making contact with the outer surface of the film, and a metal making contact with the other surface of said disc.
4. A rectifier consisting of a semi-conductor 50 in the shape of a plate of a material of the group consisting of. selenium, tellurium, a compound of an element of the sulphur group, and silicon carbide,..one surface of said plate being etched,
a film f an insulating material of higher re- 55 sistivity. than said semi-conductor covering the etched surface, a metal making intimate contact the film, and a metal the other surface with the outer surface of making intimate contact with of the plate.
5. The method of making a device in and of itself an asymmetric conductor which comprises etching one surface of a disc of a semi-conductor of the group consisting of selenium, tellurium, a compound of an element of the sulphur group, and silicon carbide, and forming a film of an insulating material of relatively higher resistivity than said semi-conductor on said etched surface.
6. The method of making a device in and of itself an asymmetric conductor which comprises etching one surface of a disc of a semi-conductor of the group consisting of selenium, tellurium, a compound of an element of the sulphur group, andsilicon carbide, and placing on said-etched surface a film of an insulating material having the property of changing from the liquid to the solid form without a change of chemical composition.
7. The method of making a device in and of itself an asymmetric conductor which comprises etching one surface of a disc of a semi-conductor, and forming on said etched surface a wax film.
8. An asymmetric conductor consisting of a semi-conductor in the shape of a disc, a film of an insulating material of higher resistivity than said semi-conductor on one surface of said disc, and mercury in intimate contact directly with said film and the other surface of the disc.
9. An electrically conductive device consisting of a semi-conductor in the shape of a plate or disc of the. group consisting of selenium, tellurium, a compound of an element of the sulphur group, and silicon carbide, and a film of an insulating material of relatively higher resistivity than said semi-conductor on one surface thereof.
10. A device in and of itself a rectifier-consisting of a disc of cuprous oxide having a of 20 wax on one surface thereof.
JOSEPH A. BECKER.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US670505A US1994632A (en) | 1933-05-11 | 1933-05-11 | Asymmetric conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US670505A US1994632A (en) | 1933-05-11 | 1933-05-11 | Asymmetric conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US1994632A true US1994632A (en) | 1935-03-19 |
Family
ID=24690666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US670505A Expired - Lifetime US1994632A (en) | 1933-05-11 | 1933-05-11 | Asymmetric conductor |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US1994632A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2459886A (en) * | 1945-11-02 | 1949-01-25 | Lorain Prod Corp | Selenium rectifier |
| DE756025C (en) * | 1938-10-04 | 1952-06-16 | Aeg | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DE754795C (en) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Process for the manufacture of selenium rectifiers |
| DE760089C (en) * | 1940-04-24 | 1954-08-16 | Siemens Schuckertwerke A G | Process for improving the blocking effect of selenium rectifiers |
| US2734154A (en) * | 1953-07-27 | 1956-02-07 | Semiconductor devices | |
| US2740925A (en) * | 1952-02-18 | 1956-04-03 | Int Rectifier Corp | Tellurium rectifier and method of making it |
| US2750540A (en) * | 1950-08-17 | 1956-06-12 | Siemens Ag | Selenium rectifiers and their manufacture |
| US2874340A (en) * | 1953-06-26 | 1959-02-17 | Sprague Electric Co | Rectifying contact |
| US2887632A (en) * | 1952-04-16 | 1959-05-19 | Timefax Corp | Zinc oxide semiconductors and methods of manufacture |
| US2994018A (en) * | 1950-09-29 | 1961-07-25 | Gen Electric | Asymmetrically conductive device and method of making the same |
| US3030704A (en) * | 1957-08-16 | 1962-04-24 | Gen Electric | Method of making non-rectifying contacts to silicon carbide |
| US3629670A (en) * | 1970-09-23 | 1971-12-21 | Gen Electric | Electrical contact to silicon carbide |
-
1933
- 1933-05-11 US US670505A patent/US1994632A/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE754795C (en) * | 1936-10-19 | 1952-10-13 | Siemens Schuckertwerke A G | Process for the manufacture of selenium rectifiers |
| DE756025C (en) * | 1938-10-04 | 1952-06-16 | Aeg | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DE760089C (en) * | 1940-04-24 | 1954-08-16 | Siemens Schuckertwerke A G | Process for improving the blocking effect of selenium rectifiers |
| US2459886A (en) * | 1945-11-02 | 1949-01-25 | Lorain Prod Corp | Selenium rectifier |
| US2750540A (en) * | 1950-08-17 | 1956-06-12 | Siemens Ag | Selenium rectifiers and their manufacture |
| US2994018A (en) * | 1950-09-29 | 1961-07-25 | Gen Electric | Asymmetrically conductive device and method of making the same |
| US2740925A (en) * | 1952-02-18 | 1956-04-03 | Int Rectifier Corp | Tellurium rectifier and method of making it |
| US2887632A (en) * | 1952-04-16 | 1959-05-19 | Timefax Corp | Zinc oxide semiconductors and methods of manufacture |
| US2874340A (en) * | 1953-06-26 | 1959-02-17 | Sprague Electric Co | Rectifying contact |
| US2734154A (en) * | 1953-07-27 | 1956-02-07 | Semiconductor devices | |
| US3030704A (en) * | 1957-08-16 | 1962-04-24 | Gen Electric | Method of making non-rectifying contacts to silicon carbide |
| US3629670A (en) * | 1970-09-23 | 1971-12-21 | Gen Electric | Electrical contact to silicon carbide |
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