DE756025C - Process for producing a barrier layer on the semiconductor layer of dry rectifiers - Google Patents
Process for producing a barrier layer on the semiconductor layer of dry rectifiersInfo
- Publication number
- DE756025C DE756025C DEL95748D DEL0095748D DE756025C DE 756025 C DE756025 C DE 756025C DE L95748 D DEL95748 D DE L95748D DE L0095748 D DEL0095748 D DE L0095748D DE 756025 C DE756025 C DE 756025C
- Authority
- DE
- Germany
- Prior art keywords
- barrier layer
- layer
- selenium
- semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- 239000011669 selenium Substances 0.000 claims description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 239000011593 sulfur Substances 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001800 Shellac Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/101—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Description
Die Erfindung· bezieht sich auf die Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern, insbesondere von Selentrockengleichrichtern, welche mit guten Sperreigenschaften in der Sperrichtung einen guten Stromdurchgang in der Durchgangsrichtung des Stromes verbindet. Die gebräuchlichsten Gleichrichter arbeiten mit einer sich auf der Halblei terschicht selbständig bildenden sog. natürlichen Sperrschicht. Da die Entstehung dieser Sperrschicht nicht ohne weiteres zu beherrschen ist, fallen bei der Massenherstellung die Gleichrichterejemente ungleichmäßig aus, so daß man bei strenger Prüfung stets mit einem verhältnismäßig großen Ausschuß rechnen muß.The invention relates to the manufacture of a barrier layer on the semiconductor layer of dry rectifiers, especially selenium dry rectifiers, which have good blocking properties in the Reverse direction connects a good current passage in the passage direction of the current. The most common rectifiers work with a layer on the semiconductor independently forming so-called natural barrier layer. Because the emergence of this barrier layer cannot be easily mastered, the rectifier elements in mass production turn out to be uneven, see above that with a strict examination one always reckons with a relatively large reject got to.
Es sind bereits Trockengleichrichter bekannt, bei denen jene Ungleichmäßigkeit durch die Aufbringung einer künstlichen Sperrschicht vermieden werden soll. Diese künstlichen Sperrschichten bestehen aus· iso-There are already known dry rectifiers in which that unevenness should be avoided by applying an artificial barrier. These artificial barriers consist of iso-
lierenden Stoffen, deren Bestandteile weder in dem Halbleitermaterial noch in dem Material der Trägerelektrode enthalten sind. Es sind insbesondere dünne Schichten aus Kunstharz, Lack oder amorphem Schwefel bekannt. Diese Schichten zeigen einen völlig homogenen Aufbau und haben wegen ihrer durchgehend isolierenden Eigenschaft zwar ein gutes Sperrvermögen, bieten jedoch dem elekirischen Strom in der Durchgangsrichtung einen zu großen Widerstand. Der Gleichrichtungsfaktor ist daher verhältnismäßig schlecht. Das gleiche gilt für die bekannten künstlichen Sperrschichten, die, beispielsweise aus Schellack oder Schwefel bestehend, durch Aufbringen in Lösung und Verdunstung des Lösungsmittels erzeugt werden. NTun spielt für die Wirksamkeit der sog. natürlichen Sperrschichten offenbar die Oberflächenbeschaffenheit des Halbleiters eine Rolle, und zwar in dem Sinn, daß die Bildung der Sperrschicht günstige Bedingungen vorfindet, wenn die Oberfläche des Halbleiters nicht zu glatt ist. Infolgedessen kann auf glatten Halbleiteroberflächen auch eine homogene künstliche Sperrschicht nicht zu guten Resultaten führen. Man würde daher genötigt sein, durch besondere Verfahrensgänge die Halbleiteroberfläche aufzurauhen, um günstigere Verhältnisse für die Bildung einer wirksamen künstlichen homogenen Sperrschicht zu erzielen.lating substances, the components of which are contained neither in the semiconductor material nor in the material of the carrier electrode. In particular, thin layers of synthetic resin, lacquer or amorphous sulfur are known. These layers have a completely homogeneous structure and, because of their continuously insulating property, have a good blocking capacity, but offer too great a resistance to the electrical current in the direction of passage. The rectification factor is therefore relatively bad. The same applies to the known artificial barrier layers, which, for example, consist of shellac or sulfur, are produced by application in solution and evaporation of the solvent. N T un plays for the effectiveness of the so-called. Natural barriers obviously the surface condition of the semiconductor a role, in the sense that the formation of the barrier layer finds favorable conditions when the surface of the semiconductor is not too smooth. As a result, even a homogeneous artificial barrier layer cannot lead to good results on smooth semiconductor surfaces. It would therefore be necessary to roughen the semiconductor surface by means of special processes in order to achieve more favorable conditions for the formation of an effective artificial homogeneous barrier layer.
Die Erfindung beschreitet einen anderen Weg, indem sie davon ausgeht, die Sperrschicht in inhomogener Zusammensetzung auf . den Halbleiter, z. B. Selen, aufzubringen und besteht darin, daß bei dem Verfahren zur Herstellung einer Sperrschicht auf der Halbleiterschicht von Trockengleichrichtern aus einer zur Verdampfung gebrachten Flüssigkeit, die den Sperrschichtstoff gelöst enthält, die Sperrschicht auf der Halbleiterschicht, ζ. Β. Selenschicht, nach deren Überführung in die wirksame Modifikation durch mechanische Aufbringung einer denselben Halbleiterstoff, ζ. B. Selen, in Suspension und zugleich ein isolierendes Bindemittel in Lösung enthaltende Flüssigkeit und durch deren darauf folgende Verdunstung erzeugt wird, so daß sie inhomogene Zusammensetzung zeigt. Die zurückbleibende Sperrschicht besteht beispielsweise aus zahlreichen einzelnen Selenteilchen, welche durch das Bindemittel räumlich voneinander getrennt zusammengehalten werden. Das Bindemittel kann z. B. durch Siliciumdioxyd oder einen geeigneten Lack oder aber durch kristallinen Schwefel gebildet werden. Als besonders vorteilhaft hat sich ein Verfahren unter Anwendung von Schwefelkohlenstoff als Verdunstungsflüssigkeit erwiesen, welcher feinzerteiltes Selen in Suspension und Schwefel in Lösung enthält. Der gelöste Schwefel schlägt sich während des Verdunstens des Lösungsmittels in kristalliner Form nieder und bildet zusammen mit den eingelagerten Selenteilchen eine Sperrschicht inhomogener Zusammensetzung. Für die Wirksamkeit einer solchen Sperrschicht ist es unwesentlich, auf welche Weise die darunterliegende Halbleiterschicht erzeugt ist. Sie kann z. B. durch Niederschlagen aus dem Dampfzustand hergestellt oder durch Aufschmelzen und eine darauffolgende Wärme- und gegebenenfalls eine Druckbehandlung erzeugt sein.The invention takes a different approach by assuming the barrier layer in an inhomogeneous composition. the semiconductor, e.g. B. Selenium to apply and is that in the method of forming a barrier layer on the semiconductor layer of dry rectifiers from a liquid brought to vaporization that contains the barrier layer material in solution, the barrier layer on the semiconductor layer, ζ. Β. Selenium layer, after its transfer in the effective modification by mechanical application of the same semiconductor material, ζ. B. selenium, in suspension and at the same time an insulating binder in solution containing liquid and is generated by its subsequent evaporation, so that it shows inhomogeneous composition. The remaining barrier layer exists for example from numerous individual selenium particles, which are spatially determined by the binding agent be held together separately from each other. The binder can e.g. B. by silicon dioxide or a suitable varnish or else be formed by crystalline sulfur. Has been particularly beneficial a process using carbon disulfide as an evaporative liquid proven, which contains finely divided selenium in suspension and sulfur in solution. The dissolved sulfur turns into crystalline material as the solvent evaporates Form and together with the embedded selenium particles forms a barrier layer of inhomogeneous composition. For the effectiveness of such a barrier it is immaterial in which way the underlying semiconductor layer is produced. You can z. B. by knocking down produced in the steam state or by melting and a subsequent heat and, if necessary, a pressure treatment can be generated.
Claims (2)
USA.-Patentschrift Nr. 1994632.643 447;
U.S. Patent No. 1994632.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL95748D DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DEA10413D DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
| NL95275A NL54474C (en) | 1938-10-04 | 1939-09-20 | |
| FR886371D FR886371A (en) | 1938-10-04 | 1942-10-05 | Process for obtaining a barrier layer for dry straighteners |
| FR886370D FR886370A (en) | 1938-10-04 | 1942-10-05 | Manufacturing process for thin selenium layers, in particular for photoelectric cells and dry rectifiers |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL95748D DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
| DEA10413D DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE756025C true DE756025C (en) | 1952-06-16 |
Family
ID=25963088
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA10413D Expired DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
| DEL95748D Expired DE756025C (en) | 1938-10-04 | 1938-10-04 | Process for producing a barrier layer on the semiconductor layer of dry rectifiers |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA10413D Expired DE876278C (en) | 1938-10-04 | 1938-10-04 | Process for the production of barrier layers for semiconductor photocells and dry rectifiers |
Country Status (3)
| Country | Link |
|---|---|
| DE (2) | DE876278C (en) |
| FR (2) | FR886370A (en) |
| NL (1) | NL54474C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2901348A (en) * | 1953-03-17 | 1959-08-25 | Haloid Xerox Inc | Radiation sensitive photoconductive member |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE519162C (en) * | 1928-11-01 | 1931-02-25 | Sueddeutsche Telefon App Kabel | Electric valve with a fixed valve layer arranged between electrodes |
| US1994632A (en) * | 1933-05-11 | 1935-03-19 | Bell Telephone Labor Inc | Asymmetric conductor |
| DE643447C (en) * | 1933-05-26 | 1937-04-08 | Aeg | Dry rectifier |
-
1938
- 1938-10-04 DE DEA10413D patent/DE876278C/en not_active Expired
- 1938-10-04 DE DEL95748D patent/DE756025C/en not_active Expired
-
1939
- 1939-09-20 NL NL95275A patent/NL54474C/xx active
-
1942
- 1942-10-05 FR FR886370D patent/FR886370A/en not_active Expired
- 1942-10-05 FR FR886371D patent/FR886371A/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE519162C (en) * | 1928-11-01 | 1931-02-25 | Sueddeutsche Telefon App Kabel | Electric valve with a fixed valve layer arranged between electrodes |
| US1994632A (en) * | 1933-05-11 | 1935-03-19 | Bell Telephone Labor Inc | Asymmetric conductor |
| DE643447C (en) * | 1933-05-26 | 1937-04-08 | Aeg | Dry rectifier |
Also Published As
| Publication number | Publication date |
|---|---|
| FR886370A (en) | 1943-10-13 |
| NL54474C (en) | 1943-05-15 |
| FR886371A (en) | 1943-10-13 |
| DE876278C (en) | 1953-05-11 |
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