US1751363A - Electric-current rectifier - Google Patents

Electric-current rectifier Download PDF

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US1751363A
US1751363A US415411A US41541129A US1751363A US 1751363 A US1751363 A US 1751363A US 415411 A US415411 A US 415411A US 41541129 A US41541129 A US 41541129A US 1751363 A US1751363 A US 1751363A
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electrode
electronegative
electric
elements
current
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US415411A
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Ruben Samuel
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RUBEN RECTIFIER Corp
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RUBEN RECTIFIER CORP
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Priority to US754956A priority Critical patent/US1865213A/en
Priority to US51524A priority patent/US1751359A/en
Priority to FR607603D priority patent/FR607603A/en
Priority to DEM92450D priority patent/DE511038C/en
Priority to DEM92452D priority patent/DE484478C/en
Priority to FR31310D priority patent/FR31310E/en
Priority to DEM92451D priority patent/DE500172C/en
Priority to FR31234D priority patent/FR31234E/en
Priority to GB14588/26A priority patent/GB277102A/en
Application filed by RUBEN RECTIFIER CORP filed Critical RUBEN RECTIFIER CORP
Priority to US415411A priority patent/US1751363A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • This invention relates to asymmetric electric couples and more particularly to electric couples adapted to be used in alternating current rectifying devices and the like, which are of the dry surface contact variety.
  • Rectiers of this type are characterized by the use of a body of electropositive material, employed as one electrode element .disposed in electrical contact with a body of electronegative material employed as 'the other electrode elements.
  • Such rectifiers depend for their operationvupon the resistance and current blocking characteristics of the lm which forms at the junction ofthe electrode element as the result lofelectrochemical, action.
  • Rectiers of this character knownV to the prior art, have been low in efiiciency and limited in their application to small currents, becoming unstable after short periods of use.
  • the present invention accordingly has for its object, generally, to provide a device of the character specified which is eilicient, economical and readily manufactured. Specifically its of electrode elements in electric couples which is free from high internal resistance and low output voltage and which are'adapted for film formation and maintenance and do not require aging or other electrical or chemical operating development to insure unilateral conductivity.
  • Fig 2 shows schematically a dry surface' :contact electric couple constructed in accordance with the invention.
  • the electronegative electrode element is also ofl a disk-like or washer-shaped form, and is shown at 11 in direct contact withthe electropositive element.
  • the electronegative element here provided is a metallic compound with at least one of the elements of the sixth periodic group, chosen from what is commonly known as the oxygen family. While those elements thereof which are conductive, as, for example,I tellurium or selenium, may be used in their normal st ate,
  • a sulpliided copper alloy lends itself readily to such use and may be considered as a somewhat icxible element capable of resistance in the electrostatic forces by its movement in synchronisin with the electric iield.
  • Such an alloy compound improves the physical characteristics of the couple, particularly by minimizing oxidation or decomposition rent blocking film attlie junction with ⁇ the' electropositive electrodeelement without the use of an interposed resistance layer; By these properties, forming currents custom ⁇ arily employed in the so-.called aging processes may be dispensed with.y
  • Vhile other alloys may be employed, it is particularly desirable to form the electronegative electrode element from a copper compound, it being ⁇ aperferable element and readily forming the desired compounds, such as sulphide, selenide, telluride and oxides.
  • the material added to vary its iinal re sistance could be lead, tin, zinc, antimony, or any other that will itself form a. sulphide or compound having a greater electrical resistance than the copper sulphide.
  • FIG.-1 An assemblage of couples retained under suitable pressure is shown in Fig.-1, where 12 denotes a bolt which is passed through a plurality of aligned asymmetric couples 13 that are arranged in series in two groups inverted with respect to each other; the bolt 12 is insulated from these couples by means of a sleeve of insulation shown at 14. Interposed between the inverted groups of asymmetric couples is a common electrode 15. This electrode is preferably disposed in contact with the electronegative electrode element of each group so that Athis electrode serves as a nega- 1,751,aes n tive terminal, as indicated, for the circuit traversed by the rectified current.
  • This cut- .'olutdevice may be of any convenient type, but ispreferably-.one having unilateral conductivity and'may be an asylmmetric couple of Lthesametype asused in t itself@ Y' e rectifying device I I't-will be found that an electrical rectifier lconstructed,'finaccordance with the present invention providesfpracticable units of hi h capacity, and its capacity is not limited by leakage or incompletely formed areas. When assembled the units require no formation process andare immediately on assembly commercially operable, in addition to the fact that the rectifier may be lutilized in connection with low power transformers, for the reason that it does not re aries the intense lformation current, or the re ormation of any area due to hydrolytic or other secondary reactions.
  • the units are especially adapted for instantaneous or intermittent use, especially the latter, so that a device embodying the subject matter of the present invention can be employed to supplant storage batteries for such uses as signal circuits. Due to the initial rectification condition, and no formation current being necessary, it is now practicable to utilize a rectifier of this type in numerous novel associations, and because of its inherent asymmetrical conductive condition the discharge of a battery upon the interruption of the charging current is cut to a negligible minimum. Furthermore, where cupric compound disks are employed it will be found that these elements will resist breakage stresses, and even though relatively thin, they may readily be ground to have a hard, smooth surface, so that uniformity of production may be assured, and the rectifier will not polarize by electrochemical reaction.
  • an asymmetric couple comprising an electropositive electrode elementof magnesium, and an electronegative electrode element formed of electronegative material containing a maximum valent compound of copper with a chemical element from the sixth periodic roup beginning with the letter S where y said electronegative electrode element has inherently reactlon properties adapted for the formation and maintenance of an inverse current blocking film at the junction of said electrode elements; said couple having means for maintaining the elements thereof united under pressure.
  • an asymmetric couple comprising an electropositive electrode element of magnesium, and an electronegative electrode element formed of electronegative material containing a compound of copper with the chemical element sulphur in an amount whereby said electronegative electrode element when subject to normal voltage has reaction properties adapted for the formation and maintenance of an inverse current-blocking film at the junction of said electrode elements; said couple having means for malntaining the elements thereof united under pressure.

Description

S.l RUBEN ELECTRIC CURRENT RECTIFIER March 18, 19.30.
Original Filed Aug. 20. 1925 Se Te IN VEN TOR.
v MM A TTORNEYS.
M9 or amalgam yPatented Man 18, 1930 UNITED STATES PATENT OFFICE SAMUEL RUBEN, OF NEW YORK, N. Y., ASSIGNOR '10 RUBEN RECTIFIER CORPORATION, OF ENGLEWOOD, NEW JERSEY, A CORPORATION OF DELAWARE ELECTRIC-CURRENT RECTIFIER Original application filed August 20,
This invention relates to asymmetric electric couples and more particularly to electric couples adapted to be used in alternating current rectifying devices and the like, which are of the dry surface contact variety. n
Rectiers of this type are characterized by the use of a body of electropositive material, employed as one electrode element .disposed in electrical contact with a body of electronegative material employed as 'the other electrode elements. Such rectifiers depend for their operationvupon the resistance and current blocking characteristics of the lm which forms at the junction ofthe electrode element as the result lofelectrochemical, action. Rectiers of this character, knownV to the prior art, have been low in efiiciency and limited in their application to small currents, becoming unstable after short periods of use.
The present invention accordingly has for its object, generally, to provide a device of the character specified which is eilicient, economical and readily manufactured. Specifically its of electrode elements in electric couples which is free from high internal resistance and low output voltage and which are'adapted for film formation and maintenance and do not require aging or other electrical or chemical operating development to insure unilateral conductivity.
This application is a -continuation in part of my prior co-pending applications, Serial No. 739,188, filed September 22nd, 1924, now Patent No. 1,649,741; Serial No. 750,539, filed November 18th 1924, now lPatent No. 1,649,- 7 42; Serial No. 754,956, filed December 10th, 1924; Serial No. 155, led January 2nd, 1925, now Patent No. 1,649,743; Serial No. 13,143, filed March 5th, 1925, now Patent No. 1,649,- 744; Serial No. 14,657, iiled March 11th, 1925; and Serial No. 38 780, filed June 22nd, 1925, now Patent No. 1,723,525 and is a `division of my application Serial No. 51,524, filed August 20th, 1925. y
Other objects of the invention will in part be obvious and will in part appear hereinafter. Y 5 For a fuller understanding of the nature object is to provide an arrangement 1925, Serial No, 51,524. Divided and this application nl ed December 20, 1929. Serial No. 415,411.
and objects of the invention, reference should be had to the following detailed 'description taken in connection withthe accompanying drawing, in which:
Fig 2 shows schematically a dry surface' :contact electric couple constructed in accordance with the invention.
Referring now to the drawing, and particularly to Flg. 2, 10 denotes an electropositive" electrode element-in disk form which may be made of -a relativelyhighly electropositive 1=metal','for example, magnesium. The electronegative electrode element is also ofl a disk-like or washer-shaped form, and is shown at 11 in direct contact withthe electropositive element.
In the practice of the invention, the electronegative element here provided is a metallic compound with at least one of the elements of the sixth periodic group, chosen from what is commonly known as the oxygen family. While those elements thereof which are conductive, as, for example,I tellurium or selenium, may be used in their normal st ate,
lstill those elements from this family which are non-conductive, such as, for example, oxygen and sulphur, may be readily used when in combination with a metal forming a conductive compound, such as, for example, the metallic oxides, sulphides, tellurides and selenides. These substances give asymmetrical electrical conductive effects when coupled with a relatively electropositive chemical element or compound, such as metallic magnesium or its amalgam and the greater the divergence in the electrochemical scale between the substances used for the electropositive and the electronegative electrode elements, the more effective the rectification.
It has also been discovered that current rectification requires contact potential diierence, and that if the initial or inherent contact potential is insuiiicient, as in the case of a couple composed of aluminum and cupric sulphide in contact, the desired contact potential diference may be attained by the interposition of a resistance between the elements,
as for example, by the oxidation of one of the elements.
A sulpliided copper alloy lends itself readily to such use and may be considered as a somewhat icxible element capable of resistance in the electrostatic forces by its movement in synchronisin with the electric iield.
Such an alloy compound improves the physical characteristics of the couple, particularly by minimizing oxidation or decomposition rent blocking film attlie junction with` the' electropositive electrodeelement without the use of an interposed resistance layer; By these properties, forming currents custom` arily employed in the so-.called aging processes may be dispensed with.y
An electronegative electrode of the employing a sulphided copper compound which is derived by the use of'an alloy. Al
practicable method of providing such a sub,- stance will be found to be that of employing a copper alloy in which the alloy material has an inherently higher resistance than pure cupric sulphide, and thereafter heating the* metal to approximately 800 C. in the presence of sulphur, and finally permitting the mass to cool'.- Thus, a copper compound is produced, the' body of which has a higher specific resistance than that of. pure cupric sulphide, and such a body will not require the use of a facing or intermediate oxide layer when utilized for electrical rectification purposes. y
Vhile other alloys may be employed, it is particularly desirable to form the electronegative electrode element from a copper compound, it being `aperferable element and readily forming the desired compounds, such as sulphide, selenide, telluride and oxides. The material added to vary its iinal re sistance could be lead, tin, zinc, antimony, or any other that will itself form a. sulphide or compound having a greater electrical resistance than the copper sulphide.
An assemblage of couples retained under suitable pressure is shown in Fig.-1, where 12 denotes a bolt which is passed through a plurality of aligned asymmetric couples 13 that are arranged in series in two groups inverted with respect to each other; the bolt 12 is insulated from these couples by means of a sleeve of insulation shown at 14. Interposed between the inverted groups of asymmetric couples is a common electrode 15. This electrode is preferably disposed in contact with the electronegative electrode element of each group so that Athis electrode serves as a nega- 1,751,aes n tive terminal, as indicated, for the circuit traversed by the rectified current.
Substantially midway of the series of asyma positive terminal, but, for simplicity of illustration, the circuit comprising the conductors 20,'21jand 22 is shown as connected to but one positive terminal so as to be traversed by only one-half of the alternating current'wave receive'dby'the rectifying device. Inseries with the conductors 21 and 22 which connect With the positive terminal of the rectifying :device shown in service, is connected acutcli-ar-` acter indicated abovelmay be pro'ducedby out vdeviceshown generally at 23. This cut- .'olutdevice may be of any convenient type, but ispreferably-.one having unilateral conductivity and'may be an asylmmetric couple of Lthesametype asused in t itself@ Y' e rectifying device I I't-will be found that an electrical rectifier lconstructed,'finaccordance with the present invention providesfpracticable units of hi h capacity, and its capacity is not limited by leakage or incompletely formed areas. When assembled the units require no formation process andare immediately on assembly commercially operable, in addition to the fact that the rectifier may be lutilized in connection with low power transformers, for the reason that it does not re uire the intense lformation current, or the re ormation of any area due to hydrolytic or other secondary reactions. Also, the units are especially adapted for instantaneous or intermittent use, especially the latter, so that a device embodying the subject matter of the present invention can be employed to supplant storage batteries for such uses as signal circuits. Due to the initial rectification condition, and no formation current being necessary, it is now practicable to utilize a rectifier of this type in numerous novel associations, and because of its inherent asymmetrical conductive condition the discharge of a battery upon the interruption of the charging current is cut to a negligible minimum. Furthermore, where cupric compound disks are employed it will be found that these elements will resist breakage stresses, and even though relatively thin, they may readily be ground to have a hard, smooth surface, so that uniformity of production may be assured, and the rectifier will not polarize by electrochemical reaction.
It will also be understood that the following claims are intended to cover all of the generic and specific features of the invention ioo herein described and all statements of the scope of the invention which as a matter of language might be said to fall therebetween.
Having described my invention, what I claim as new and desire to secure by Letters Patent, is:
1. In dry surface contact rectiying devices and the like, an asymmetric couple comprising an electropositive electrode elementof magnesium, and an electronegative electrode element formed of electronegative material containing a maximum valent compound of copper with a chemical element from the sixth periodic roup beginning with the letter S where y said electronegative electrode element has inherently reactlon properties adapted for the formation and maintenance of an inverse current blocking film at the junction of said electrode elements; said couple having means for maintaining the elements thereof united under pressure.
2. In dry surface contact rectifying devices and the like, an asymmetric couple com- A prising an electropositive electrode element of magnesium,I and an electronegative electrode element formed of cupric sulphide whereb said electronegative electrode element W en subject to normal volta e has reaction properties adapted for the ormation and maintenance of an inverse current-blocking film at the junction of said electrode elements; said couple having means for maintaining the elements thereof united under pressure.
3. In dry surface contact rectiying devices and the like, an asymmetric couple comprising an electropositive electrode element of magnesium, and an electronegative electrode element formed of electronegative material containing a compound of copper with the chemical element sulphur in an amount whereby said electronegative electrode element when subject to normal voltage has reaction properties adapted for the formation and maintenance of an inverse current-blocking film at the junction of said electrode elements; said couple having means for malntaining the elements thereof united under pressure.
In testimony whereof I aiiix my si ature.
SAMUEL R EN.
US415411A 1924-12-10 1929-12-20 Electric-current rectifier Expired - Lifetime US1751363A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
US754956A US1865213A (en) 1924-12-10 1924-12-10 Electric current rectifier
US51524A US1751359A (en) 1924-12-10 1925-08-20 Asymmetric electric couple
FR607603D FR607603A (en) 1924-12-10 1925-12-09 Improvements in electric current rectifiers and in the production method of their electrodes
DEM92452D DE484478C (en) 1924-12-10 1925-12-10 Dry rectifier cell
DEM92450D DE511038C (en) 1924-12-10 1925-12-10 Dry rectifier cell
FR31310D FR31310E (en) 1924-12-10 1925-12-10 Improvements in electric current rectifiers and in the production method of their electrodes
DEM92451D DE500172C (en) 1924-12-10 1925-12-10 Dry rectifier cell
FR31234D FR31234E (en) 1924-12-10 1925-12-10 Improvements in electric current rectifiers and in the production method of their electrodes
GB14588/26A GB277102A (en) 1924-12-10 1926-06-09 Improvements in or relating to alternating current rectifying devices
US415411A US1751363A (en) 1924-12-10 1929-12-20 Electric-current rectifier

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US754956A US1865213A (en) 1924-12-10 1924-12-10 Electric current rectifier
US51524A US1751359A (en) 1924-12-10 1925-08-20 Asymmetric electric couple
DEM0092452 1925-12-09
GB14588/26A GB277102A (en) 1924-12-10 1926-06-09 Improvements in or relating to alternating current rectifying devices
US415411A US1751363A (en) 1924-12-10 1929-12-20 Electric-current rectifier

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US1751363A true US1751363A (en) 1930-03-18

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US754956A Expired - Lifetime US1865213A (en) 1924-12-10 1924-12-10 Electric current rectifier
US51524A Expired - Lifetime US1751359A (en) 1924-12-10 1925-08-20 Asymmetric electric couple
US415411A Expired - Lifetime US1751363A (en) 1924-12-10 1929-12-20 Electric-current rectifier

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US754956A Expired - Lifetime US1865213A (en) 1924-12-10 1924-12-10 Electric current rectifier
US51524A Expired - Lifetime US1751359A (en) 1924-12-10 1925-08-20 Asymmetric electric couple

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US (3) US1865213A (en)
DE (2) DE500172C (en)
FR (3) FR607603A (en)
GB (1) GB277102A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE941631C (en) * 1935-03-12 1956-04-12 Aeg Selenium barrier photocell
DE757281C (en) * 1938-12-14 1953-10-05 Aeg Electrically asymmetrically conductive system, in particular dry rectifier, with a barrier layer between the semiconductor and the carrier electrode and a method for its production
US2547951A (en) * 1945-02-08 1951-04-10 Levin Irvin Rectifier
US2623104A (en) * 1950-08-05 1952-12-23 Fansteel Metallurgical Corp Rectifier assembly
DE972433C (en) * 1951-10-07 1959-07-23 Siemens Ag Process for the production of copper oxide rectifier disks
US2743341A (en) * 1953-01-19 1956-04-24 Taylor Winfield Corp Rectifier welder apparatus
US2829321A (en) * 1953-07-30 1958-04-01 Sylvania Electric Prod Arsenic tellurium alloys
US2846625A (en) * 1955-03-31 1958-08-05 Columbia Broadcasting Syst Inc Semiconductor device
US2919389A (en) * 1955-04-28 1959-12-29 Siemens Ag Semiconductor arrangement for voltage-dependent capacitances
US2947889A (en) * 1956-08-27 1960-08-02 Gen Ultrasonics Company Electromechanical transducer system
US3658662A (en) * 1969-01-21 1972-04-25 Durolith Corp Corrosion resistant metallic plates particularly useful as support members for photo-lithographic plates and the like
US4386362A (en) * 1979-12-26 1983-05-31 Rca Corporation Center gate semiconductor device having pipe cooling means

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Publication number Publication date
GB277102A (en) 1927-09-09
DE511038C (en) 1930-10-25
US1751359A (en) 1930-03-18
DE500172C (en) 1930-06-18
FR31310E (en) 1927-01-28
FR607603A (en) 1926-07-06
US1865213A (en) 1932-06-28
FR31234E (en) 1927-01-26

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