DE484478C - Dry rectifier cell - Google Patents
Dry rectifier cellInfo
- Publication number
- DE484478C DE484478C DEM92452D DEM0092452D DE484478C DE 484478 C DE484478 C DE 484478C DE M92452 D DEM92452 D DE M92452D DE M0092452 D DEM0092452 D DE M0092452D DE 484478 C DE484478 C DE 484478C
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- rectifier cell
- tungsten
- dry rectifier
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000012047 saturated solution Substances 0.000 claims description 2
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- NWJUARNXABNMDW-UHFFFAOYSA-N tungsten vanadium Chemical group [W]=[V] NWJUARNXABNMDW-UHFFFAOYSA-N 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 150000003682 vanadium compounds Chemical class 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Battery Electrode And Active Subsutance (AREA)
Description
Trockne Gleichrichterzelle Die Erfindung betrifft Trockengleichrichterzellen, welche durch besondere Auswahl ihrer Elektrodenpaare einen vergleichsweise geringen inneren Widerstand in der Durchlaßrichtung und einen hohen Nutzeffekt aufweisen sowie gegen Überlastungen unempfindlich sind.Dry rectifier cell The invention relates to dry rectifier cells, which due to the special selection of their electrode pairs a comparatively low have internal resistance in the forward direction and high efficiency and are insensitive to overloads.
Gemäß der Erfindung wird als positive Elektrode ein Metall der Chromgruppe verwendet, welches mit einem sperrenden Oxydüberzug versehen ist, und als negative Elektrode ein metallisch leitendes Oxyd, insbesondere die Oxyde des Eisens, Bleis, Vanadiums und -.L%Iangans in deren höchster Wertigkeit.According to the invention, a metal of the chromium group is used as the positive electrode used, which is provided with a blocking oxide coating, and as a negative Electrode a metallically conductive oxide, especially the oxides of iron, lead, Vanadiums and -.L% langans in their highest quality.
Das bevorzugte Verfahren zur Herstellung einer mit einem Oxydüberzug versehenen positiven Elektrode besteht darin, das Metall als Anode in einen Gleichstromkreis von etwa i5o Volt Spannung zu bringen, während es in eine gesättigte Lösung von Ammoniumborat eingetaucht ist. Ein anderes Verfahren zur Oxydierung der Elektrodenoberfläche besteht darin, das iNletall in einer oxydierenden Atmosphäre zu erhitzen; aber bei dieser Verfahrensweise ist die entstehende Oberflächenschicht weniger befriedigend als bei Anivendung der erstgenannten Methode. Der Metalloxydiiber,-ug auf der Elektrode wirkt als Sperrschicht für den Stromdurchgan 'g, wenn die Elektrode im Wechselstromkreis die Anode bildet, nicht aber, wenn die Elektrode die Kathode bildet, so daß also eine Gleichrichtung des Wechselstronies erzielt wird. el Als Elektrodenmaterial kann irgendeines der Metalle der Chromgruppe, z. B. Chrom, Uran, Molvbdän oder Wolfram benutzt werden, von welihen das letzterwähnte die beste Stromgleichrichtung ergibt.The preferred method of making one with an oxide coating The positive electrode provided is the metal as the anode in a direct current circuit Bringing voltage of about i5o volts while placing it in a saturated solution of Ammonium borate is immersed. Another method of oxidizing the electrode surface consists in heating the metal in an oxidizing atmosphere; but with the resulting surface layer is less than satisfactory with this procedure than when using the former method. The metal oxide diameter on the electrode acts as a barrier to the passage of current when the electrode is in the AC circuit forms the anode, but not when the electrode forms the cathode, so that a rectification of the alternating current is achieved. el As an electrode material can be any of the metals of the chromium group, e.g. B. chromium, uranium, molybdenum or tungsten can be used, of which the last mentioned gives the best current rectification.
Als negative Elektrode kann Manganoxyd, Eisenoxyd, Bleioxyd und Vanadiumoxyd, und zwar in höchster Wertigkeitsstufe benutzt werden. Der beste Gleichrichteeffekt wird im allgemeinen mit Vanadium-Pentoxyd erzielt, wobei die wirksamste Kombinat-ion diejenige ist, bei welcher das Vanadium-Pentoxyd zusammen mit Wolfram benutzt wird, da hier eine verhältnismäßig große Stromdichte für den gleichgerichteten Strom erzielt wird, Strom und Spannung konstant bleiben und der elektrische Widerstand der Gleichrichterzelle in der Durchlaßrichtung gering ist. Wird auf eine Wolframelektrode .eine Schicht von Vanadium-Pentoxvd in pulverförmigem Zustande aufgebracht und dann die Masse hinreichend stark erhitzt, um das Vanadium-Pentoxyd zu schmelzen, so daß es über die Oberfläche der Wolframelektrode fließt, dann reagiert die Vanadiumverbindung, da sie von oxydischer Beschaffenheit ist, mit dem Wolfram und bildet eine Oberflächenschicht von Wolframoxyd, welches das eigentliche gleichrichtende Element der Kombination ist. Der erstarrte Vanadiumüberzug ist in hohem Maße leitend, ;und die Kombination Wolfram-Vanadium bildet eine sehr- wirksanie Halbweg-Gleichrichterzelle. Wenn man beide Seiten der Wolframplatte in dieser Weise behandelt, dann wird Vollweg-Gleichrichtung erzielt.Manganese oxide, iron oxide, lead oxide and vanadium oxide can be used as negative electrodes, and that can be used in the highest valence level. The best rectifying effect is generally achieved with vanadium pentoxide, the most effective combination is the one in which the vanadium pentoxide is used together with tungsten, because a relatively large current density is achieved here for the rectified current will, current and voltage remain constant and the electrical resistance of the rectifier cell is small in the forward direction. Apply a layer to a tungsten electrode of vanadium pentoxide applied in powder form and then the mass heated sufficiently to melt the vanadium pentoxide so that it is over the surface of the tungsten electrode flows, then the vanadium compound reacts, as it is of an oxidic nature, with the tungsten and forms a surface layer of tungsten oxide, which is the actual rectifying element of the combination is. The solidified vanadium coating is highly conductive, and the combination Tungsten vanadium forms a very effective half-wave rectifier cell. if Treating both sides of the tungsten plate in this way results in full wave rectification achieved.
Obwohl man annehmen kann, daß die beste Gleichrichtung durch eine Zelle der oben angegebenen Art erzielt wird, so kann doch auch eine Strorngleichrichtung erhalten werden, welche für mancherlei Zwecke genügt, wenn man das Metalloxyd auf die oxydierte Oberfläche der Metallelektrode in Mischung mit einem chemisch inerten Bindernittel aufträgt und dann die unerwünschten Bestandteile des Bindemittels herausbrennt. Man kann auch aus dem gepulverten Metalloxydmaterial eine Platte als Oberflächenschicht für die Metallelektrode herstellen.Although one can assume that the best rectification is through a Cell of the type specified above is achieved, so can also a current rectification can be obtained, which is sufficient for many purposes, if the metal oxide on the oxidized surface of the metal electrode mixed with a chemically inert one Applies binder and then burns out the undesirable constituents of the binder. A plate can also be used as a surface layer from the powdered metal oxide material for the metal electrode.
Die Erfindung ist auf der beiliegend-en Zeichnung schematisch an dem Beispiel einer Gleichrichterzelle für die Ladung einer Sammlerbatterie veranschaulicht.The invention is shown schematically in the accompanying drawing Example of a rectifier cell for charging a collector battery illustrated.
Auf der Zeichnung ist mit G eine Wechselstrommaschine bezeichnet. T bezeichnet einen Transformator für den Wechselstrom und B die im Gleichstromkreise liegende, zu ladende Sammlerbatterie. -Mit 2, ist eine Reihe von mit Oxyd überzogenen Wolframelektroden bezeichnet, die sich in Oberflächenberührung mit elektronegativen, eine gleichrichtende Oberflächenschicht bildenden Elektroden 3 befinden, welche ihrerseits in Oberflächenberührung mit leitenden Platten i stehen. Die mittlere Wolframel-ek-trode ist mit Wolfranioxyd auf beiden Seiten bedeckt und befindet sich beiderseitig in Oberflächenberührun,g mit Elektroden 3. jede der übrigen Wolframelektroden ist auf einer Seite mit einem Oxydüberzug versehen und befindet sich auch nur einseitig in Berührung mit einer Elektrode 3. Das Zellenaggregat wird durch einen Bolzen N, der durch eine Isolilerröhre D gegen die Zelleneleinente isoliert ist, unter passendem Druck gehalten. An jedem Ende des Bolzens N ist eine isolierende Unterlegescheibe 4 und an einem Ende außerdem noch eine federnde Unterlegescheibe 5 vorgesehen.In the drawing, G denotes an alternating current machine. T denotes a transformer for the alternating current and B denotes the accumulator battery to be charged in the direct current circuit. -With 2, a series of oxide-coated tungsten electrodes is referred to, which are in surface contact with electronegative electrodes 3 , which form a rectifying surface layer and which in turn are in surface contact with conductive plates i. The middle tungsten electrode is covered with tungsten oxide on both sides and is in surface contact on both sides, g with electrodes 3. Each of the remaining tungsten electrodes is provided with an oxide coating on one side and is only in contact with an electrode 3 on one side . the cell assembly is held by a bolt N, which is isolated by a Isolilerröhre D against the Zelleneleinente, under suitable pressure. An insulating washer 4 is provided at each end of the bolt N and a resilient washer 5 is also provided at one end.
Mit Ia und lb sind die WechselstromzuleitUngen. Und Mit oa Und Ob die Gleichstromableitungen bezeichnet. Der positive Pol der Batterie B ist mit der mittleren Wolframelektrode 2 verbunden, während der negative Pol an die äußeren leitenden Platten 1 angeschlossen ist.With Ia and lb are the alternating current supply lines. And with the oa and ob denotes the direct current leads. The positive pole of the battery B is connected to the central tungsten electrode 2, while the negative pole is connected to the outer conductive plates 1 .
Wenn die Zuleitungen Ill und Ib an eine Wechselstromquelle angeschlossen werden, dann fließt Strom während der Stromperiode, in welcher die oxydüb-erzogenen Wolframplatten Kathoden sind, in einer Richtung, welche durch die Pfeile d' und d4 angedeutet ist. Beim Polwechsel fließt der Strom in der durch die Pfeile dII und d-1 angedeuteten Richtung. Man erkennt, daß eine Vollweg-Gleichrichtung erzielt wird, und daß im wesentlichen ununterbrochen Gleichstrom über die Ableitungen 011 und Ob fließt. Die Batterie B wird also geladen, wenn das Potential des Stromes auf der Gleichstromseite größer ist als das Battexiepotential. Wenn das Potential im Gleichstromkreise sinkt, dann kann eine Entladung der Batterie in umgekehrter Richtung gleichwohl nicht eintreten, weil der Widerstand des OxydÜberzuges der Wolframelektrode praktisch eine Unterbrechung des Stromkreises bewirkt, wenn die Wolframelektroide die Anode bildet.If the leads III and Ib are connected to an alternating current source, then current flows during the current period in which the oxide-coated tungsten plates are cathodes in a direction which is indicated by the arrows d 'and d4. When changing polarity, the current flows in the direction indicated by the arrows dII and d-1. It can be seen that full wave rectification is achieved and that direct current flows essentially uninterruptedly via leads 011 and Ob. The battery B is thus charged when the potential of the current on the direct current side is greater than the battery potential. If the potential in the direct current circuit drops, the battery cannot discharge in the opposite direction, because the resistance of the oxide coating on the tungsten electrode practically interrupts the circuit when the tungsten electrode forms the anode.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEM92452D DE484478C (en) | 1924-12-10 | 1925-12-10 | Dry rectifier cell |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US754956A US1865213A (en) | 1924-12-10 | 1924-12-10 | Electric current rectifier |
| US51524A US1751359A (en) | 1924-12-10 | 1925-08-20 | Asymmetric electric couple |
| DEM0092452 | 1925-12-09 | ||
| DEM92452D DE484478C (en) | 1924-12-10 | 1925-12-10 | Dry rectifier cell |
| GB14588/26A GB277102A (en) | 1924-12-10 | 1926-06-09 | Improvements in or relating to alternating current rectifying devices |
| US415411A US1751363A (en) | 1924-12-10 | 1929-12-20 | Electric-current rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE484478C true DE484478C (en) | 1929-10-22 |
Family
ID=27544889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEM92452D Expired DE484478C (en) | 1924-12-10 | 1925-12-10 | Dry rectifier cell |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE484478C (en) |
-
1925
- 1925-12-10 DE DEM92452D patent/DE484478C/en not_active Expired
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