GB1604550A - Method for forming an integrated circuit and an integrated circuit formed by the method - Google Patents
Method for forming an integrated circuit and an integrated circuit formed by the method Download PDFInfo
- Publication number
- GB1604550A GB1604550A GB2448578A GB2448578A GB1604550A GB 1604550 A GB1604550 A GB 1604550A GB 2448578 A GB2448578 A GB 2448578A GB 2448578 A GB2448578 A GB 2448578A GB 1604550 A GB1604550 A GB 1604550A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- grid
- basic
- basic cells
- overlie
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 14
- 239000011521 glass Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical group CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012358 sourcing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80190777A | 1977-05-31 | 1977-05-31 | |
US84747877A | 1977-11-01 | 1977-11-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1604550A true GB1604550A (en) | 1981-12-09 |
Family
ID=27122394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2448578A Expired GB1604550A (en) | 1977-05-31 | 1978-05-30 | Method for forming an integrated circuit and an integrated circuit formed by the method |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS54116186A (de) |
CA (1) | CA1106980A (de) |
DE (1) | DE2823555A1 (de) |
FR (1) | FR2393427A1 (de) |
GB (1) | GB1604550A (de) |
NL (1) | NL185431C (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4295149A (en) * | 1978-12-29 | 1981-10-13 | International Business Machines Corporation | Master image chip organization technique or method |
FR2495834A1 (fr) * | 1980-12-05 | 1982-06-11 | Cii Honeywell Bull | Dispositif a circuits integres de haute densite |
US4377849A (en) * | 1980-12-29 | 1983-03-22 | International Business Machines Corporation | Macro assembler process for automated circuit design |
JPS5832445A (ja) * | 1981-08-20 | 1983-02-25 | Nec Corp | 集積回路装置及びその製造方法 |
JPS5857749A (ja) * | 1981-10-01 | 1983-04-06 | Seiko Epson Corp | 半導体装置 |
JPS5890758A (ja) * | 1981-11-25 | 1983-05-30 | Mitsubishi Electric Corp | 相補形集積回路装置 |
JPS58111347A (ja) * | 1981-12-24 | 1983-07-02 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JPH0669142B2 (ja) * | 1983-04-15 | 1994-08-31 | 株式会社日立製作所 | 半導体集積回路装置 |
US4737836A (en) * | 1983-12-30 | 1988-04-12 | International Business Machines Corporation | VLSI integrated circuit having parallel bonding areas |
JPH0758761B2 (ja) * | 1983-12-30 | 1995-06-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体集積回路チップ |
KR910005605B1 (en) * | 1987-06-08 | 1991-07-31 | Fujitsu Ltd | Master-slice type semiconductor device imbeded multi gate |
JP5552775B2 (ja) | 2009-08-28 | 2014-07-16 | ソニー株式会社 | 半導体集積回路 |
JP7004038B2 (ja) * | 2020-07-28 | 2022-01-21 | ソニーグループ株式会社 | 半導体集積回路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3983619A (en) * | 1968-01-26 | 1976-10-05 | Hitachi, Ltd. | Large scale integrated circuit array of unit cells and method of manufacturing same |
JPS492796B1 (de) * | 1969-02-28 | 1974-01-22 | ||
NL176029C (nl) * | 1973-02-01 | 1985-02-01 | Philips Nv | Geintegreerde logische schakeling met komplementaire transistoren. |
GB1440512A (en) * | 1973-04-30 | 1976-06-23 | Rca Corp | Universal array using complementary transistors |
JPS50134385A (de) * | 1974-04-09 | 1975-10-24 | ||
JPS5314469B2 (de) * | 1974-05-17 | 1978-05-17 | ||
CA1024661A (en) * | 1974-06-26 | 1978-01-17 | International Business Machines Corporation | Wireable planar integrated circuit chip structure |
US3999214A (en) * | 1974-06-26 | 1976-12-21 | Ibm Corporation | Wireable planar integrated circuit chip structure |
JPS5816176Y2 (ja) * | 1976-07-16 | 1983-04-01 | 三洋電機株式会社 | 大規模集積回路装置 |
-
1978
- 1978-05-30 NL NL7805833A patent/NL185431C/xx not_active IP Right Cessation
- 1978-05-30 GB GB2448578A patent/GB1604550A/en not_active Expired
- 1978-05-30 DE DE19782823555 patent/DE2823555A1/de not_active Ceased
- 1978-05-31 FR FR7816275A patent/FR2393427A1/fr active Granted
- 1978-05-31 CA CA304,470A patent/CA1106980A/en not_active Expired
- 1978-05-31 JP JP6443478A patent/JPS54116186A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2393427B1 (de) | 1983-09-09 |
CA1106980A (en) | 1981-08-11 |
NL7805833A (nl) | 1978-12-04 |
JPH0113222B2 (de) | 1989-03-03 |
FR2393427A1 (fr) | 1978-12-29 |
JPS54116186A (en) | 1979-09-10 |
NL185431B (nl) | 1989-11-01 |
NL185431C (nl) | 1990-04-02 |
DE2823555A1 (de) | 1978-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5420447A (en) | Double buffer base gate array cell | |
US3943551A (en) | LSI array using field effect transistors of different conductivity type | |
US4178674A (en) | Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor | |
EP0006958B1 (de) | Integrierte schaltungen mit ergänzendem mis-halbleiter | |
US5095356A (en) | Cellular integrated circuit and hierarchical method | |
KR900000202B1 (ko) | 반도체 집적회로 및 그 회로 패턴 설계방법 | |
JPS647508B2 (de) | ||
GB1604550A (en) | Method for forming an integrated circuit and an integrated circuit formed by the method | |
EP2764540A1 (de) | Gate-array-architektur mit mehreren programmierbaren regionen | |
US4742383A (en) | Multi-function FET masterslice cell | |
US4969029A (en) | Cellular integrated circuit and hierarchial method | |
US4525809A (en) | Integrated circuit | |
KR860000409B1 (ko) | 마스터 슬라이스 반도체장치 | |
EP0231821B1 (de) | Stromversorgungsleitungen in einer integrierten Halbleiterschaltung | |
US5229629A (en) | Semiconductor integrated circuit having improved cell layout | |
JPH031837B2 (de) | ||
EP0127100A2 (de) | Integrierte Halbleiterschaltungsanordnung | |
KR900003029B1 (ko) | 칩을 갖는 집적회로 장치 | |
EP0282082B1 (de) | Basiszelle für eine Gatematrixvorrichtung | |
US3983619A (en) | Large scale integrated circuit array of unit cells and method of manufacturing same | |
US4005470A (en) | Triple diffused logic elements | |
EP0021661A1 (de) | Masterslice-Halbleitervorrichtung | |
EP0097375A1 (de) | Dreidimensionales Halbleiterbauelement | |
US7265396B2 (en) | Semiconductor device | |
EP0092176B1 (de) | Basiszelle für integrierte Verknüpfungsschaltungsfelder |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19980529 |