GB1533001A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1533001A
GB1533001A GB52649/75A GB5264975A GB1533001A GB 1533001 A GB1533001 A GB 1533001A GB 52649/75 A GB52649/75 A GB 52649/75A GB 5264975 A GB5264975 A GB 5264975A GB 1533001 A GB1533001 A GB 1533001A
Authority
GB
United Kingdom
Prior art keywords
mis structure
electrode
mis
dec
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52649/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1533001A publication Critical patent/GB1533001A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
GB52649/75A 1974-12-25 1975-12-23 Semiconductor device Expired GB1533001A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP753860A JPS5732547B2 (enrdf_load_stackoverflow) 1974-12-25 1974-12-25

Publications (1)

Publication Number Publication Date
GB1533001A true GB1533001A (en) 1978-11-22

Family

ID=11568935

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52649/75A Expired GB1533001A (en) 1974-12-25 1975-12-23 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5732547B2 (enrdf_load_stackoverflow)
CA (1) CA1056058A (enrdf_load_stackoverflow)
DE (1) DE2558337C2 (enrdf_load_stackoverflow)
FR (1) FR2296266A1 (enrdf_load_stackoverflow)
GB (1) GB1533001A (enrdf_load_stackoverflow)
NL (1) NL7515024A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030375A1 (en) * 1979-12-07 1981-06-17 Kabushiki Kaisha Toshiba Solid state image sensor
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2606308C2 (de) 1976-02-17 1985-05-23 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler optoelektronischer Halbleitersensor
JPS5374893A (en) * 1976-12-15 1978-07-03 Fujitsu Ltd Driving method for semiconductor photosensitive device
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE35581B1 (en) * 1970-09-04 1976-03-31 Gen Electric Semiconductor apparatus for selectively moving electrical charges
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030375A1 (en) * 1979-12-07 1981-06-17 Kabushiki Kaisha Toshiba Solid state image sensor
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device

Also Published As

Publication number Publication date
FR2296266A1 (fr) 1976-07-23
JPS5175321A (enrdf_load_stackoverflow) 1976-06-29
JPS5732547B2 (enrdf_load_stackoverflow) 1982-07-12
DE2558337C2 (de) 1983-04-14
FR2296266B1 (enrdf_load_stackoverflow) 1982-09-24
DE2558337A1 (de) 1976-07-08
CA1056058A (en) 1979-06-05
NL7515024A (nl) 1976-06-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931223