FR2296266A1 - Capteur d'images a semi-conducteur avec registres a decalage a couplage de charges - Google Patents

Capteur d'images a semi-conducteur avec registres a decalage a couplage de charges

Info

Publication number
FR2296266A1
FR2296266A1 FR7539766A FR7539766A FR2296266A1 FR 2296266 A1 FR2296266 A1 FR 2296266A1 FR 7539766 A FR7539766 A FR 7539766A FR 7539766 A FR7539766 A FR 7539766A FR 2296266 A1 FR2296266 A1 FR 2296266A1
Authority
FR
France
Prior art keywords
load
image sensor
semiconductor image
offset registers
coupling offset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539766A
Other languages
English (en)
French (fr)
Other versions
FR2296266B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2296266A1 publication Critical patent/FR2296266A1/fr
Application granted granted Critical
Publication of FR2296266B1 publication Critical patent/FR2296266B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
FR7539766A 1974-12-25 1975-12-24 Capteur d'images a semi-conducteur avec registres a decalage a couplage de charges Granted FR2296266A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP753860A JPS5732547B2 (enrdf_load_stackoverflow) 1974-12-25 1974-12-25

Publications (2)

Publication Number Publication Date
FR2296266A1 true FR2296266A1 (fr) 1976-07-23
FR2296266B1 FR2296266B1 (enrdf_load_stackoverflow) 1982-09-24

Family

ID=11568935

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539766A Granted FR2296266A1 (fr) 1974-12-25 1975-12-24 Capteur d'images a semi-conducteur avec registres a decalage a couplage de charges

Country Status (6)

Country Link
JP (1) JPS5732547B2 (enrdf_load_stackoverflow)
CA (1) CA1056058A (enrdf_load_stackoverflow)
DE (1) DE2558337C2 (enrdf_load_stackoverflow)
FR (1) FR2296266A1 (enrdf_load_stackoverflow)
GB (1) GB1533001A (enrdf_load_stackoverflow)
NL (1) NL7515024A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2606308C2 (de) 1976-02-17 1985-05-23 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler optoelektronischer Halbleitersensor
JPS5374893A (en) * 1976-12-15 1978-07-03 Fujitsu Ltd Driving method for semiconductor photosensitive device
JPS606147B2 (ja) * 1979-12-07 1985-02-15 株式会社東芝 固体撮像装置
DE3044341C2 (de) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Fototransistor
JPS6080272A (ja) * 1983-10-07 1985-05-08 Canon Inc 電荷転送素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE35581B1 (en) * 1970-09-04 1976-03-31 Gen Electric Semiconductor apparatus for selectively moving electrical charges
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Also Published As

Publication number Publication date
FR2296266B1 (enrdf_load_stackoverflow) 1982-09-24
GB1533001A (en) 1978-11-22
DE2558337A1 (de) 1976-07-08
NL7515024A (nl) 1976-06-29
CA1056058A (en) 1979-06-05
DE2558337C2 (de) 1983-04-14
JPS5175321A (enrdf_load_stackoverflow) 1976-06-29
JPS5732547B2 (enrdf_load_stackoverflow) 1982-07-12

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Legal Events

Date Code Title Description
ST Notification of lapse