FR2314584A1 - Dispositif capteur d'images - Google Patents

Dispositif capteur d'images

Info

Publication number
FR2314584A1
FR2314584A1 FR7617352A FR7617352A FR2314584A1 FR 2314584 A1 FR2314584 A1 FR 2314584A1 FR 7617352 A FR7617352 A FR 7617352A FR 7617352 A FR7617352 A FR 7617352A FR 2314584 A1 FR2314584 A1 FR 2314584A1
Authority
FR
France
Prior art keywords
image sensor
sensor device
image
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7617352A
Other languages
English (en)
Other versions
FR2314584B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2314584A1 publication Critical patent/FR2314584A1/fr
Application granted granted Critical
Publication of FR2314584B1 publication Critical patent/FR2314584B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14825Linear CCD imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
FR7617352A 1975-06-09 1976-06-09 Dispositif capteur d'images Granted FR2314584A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7506795,A NL180157C (nl) 1975-06-09 1975-06-09 Halfgeleider beeldopneeminrichting.

Publications (2)

Publication Number Publication Date
FR2314584A1 true FR2314584A1 (fr) 1977-01-07
FR2314584B1 FR2314584B1 (fr) 1979-04-06

Family

ID=19823918

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7617352A Granted FR2314584A1 (fr) 1975-06-09 1976-06-09 Dispositif capteur d'images

Country Status (14)

Country Link
US (1) US4724470A (fr)
JP (1) JPS51150288A (fr)
AU (1) AU503110B2 (fr)
BR (1) BR7603624A (fr)
CA (1) CA1065978A (fr)
CH (1) CH609490A5 (fr)
DE (1) DE2623541C3 (fr)
ES (1) ES448628A1 (fr)
FR (1) FR2314584A1 (fr)
GB (1) GB1557238A (fr)
IT (1) IT1061529B (fr)
MX (1) MX157678A (fr)
NL (1) NL180157C (fr)
SE (1) SE414355B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0038725A1 (fr) * 1980-04-23 1981-10-28 Thomson-Csf Dispositif photosensible lu par transfert de charges, et caméra de télévision comportant un tel dispositif
FR2503502A1 (fr) * 1981-03-31 1982-10-08 Thomson Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges electriques et camera de television comportant un tel dispositif

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345119A (en) * 1976-10-06 1978-04-22 Hitachi Ltd Solid state pickup element
GB1592373A (en) * 1976-12-30 1981-07-08 Ibm Photodetector
JPS5497323A (en) * 1978-01-18 1979-08-01 Matsushita Electric Ind Co Ltd Solid image pickup unit
US4247788A (en) * 1978-10-23 1981-01-27 Westinghouse Electric Corp. Charge transfer device with transistor input signal divider
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS5630373A (en) * 1979-08-20 1981-03-26 Matsushita Electric Ind Co Ltd Solid image pickup unit
DE2943143A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
JPS5762672A (en) * 1980-10-01 1982-04-15 Toshiba Corp Solid-state image pickup sensor
US4488163A (en) * 1981-01-19 1984-12-11 Westinghouse Electric Corp. Highly isolated photodetectors
JPS589361A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 固体撮像素子
SE442152B (sv) * 1981-11-23 1985-12-02 Olof Engstrom Forfarande for jemforelse av en forsta optisk signal med minst en annan signal
JPS58157264A (ja) * 1982-03-15 1983-09-19 Toshiba Corp 固体撮像装置
US4807007A (en) * 1983-10-03 1989-02-21 Texas Instruments Incorporated Mis infrared detector having a storage area
US4594604A (en) * 1983-10-21 1986-06-10 Westinghouse Electric Corp. Charge coupled device with structures for forward scuppering to reduce noise
JPH0766961B2 (ja) * 1988-10-07 1995-07-19 三菱電機株式会社 固体撮像素子
US5066994A (en) * 1989-03-31 1991-11-19 Eastman Kodak Company Image sensor
US5051797A (en) * 1989-09-05 1991-09-24 Eastman Kodak Company Charge-coupled device (CCD) imager and method of operation
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
US5070380A (en) * 1990-08-13 1991-12-03 Eastman Kodak Company Transfer gate for photodiode to CCD image sensor
US6072204A (en) * 1997-06-23 2000-06-06 Scientific Imaging Technologies, Inc. Thinned CCD
JP3284986B2 (ja) * 1998-12-04 2002-05-27 日本電気株式会社 光電変換素子およびそれを用いた固体撮像装置
JP5037078B2 (ja) * 2006-09-15 2012-09-26 富士フイルム株式会社 固体撮像素子およびその駆動方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2208193A1 (fr) * 1972-11-29 1974-06-21 Westinghouse Electric Corp
FR2247039A1 (fr) * 1973-10-03 1975-05-02 Fairchild Camera Instr Co

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714526A (en) * 1971-02-19 1973-01-30 Nasa Phototransistor
US3813541A (en) * 1971-05-17 1974-05-28 Columbia Broadcasting Sys Inc Mos photodiode
GB1437328A (en) * 1972-09-25 1976-05-26 Rca Corp Sensors having recycling means
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
US3995302A (en) * 1973-05-07 1976-11-30 Fairchild Camera And Instrument Corporation Transfer gate-less photosensor configuration
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2208193A1 (fr) * 1972-11-29 1974-06-21 Westinghouse Electric Corp
FR2247039A1 (fr) * 1973-10-03 1975-05-02 Fairchild Camera Instr Co

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0038725A1 (fr) * 1980-04-23 1981-10-28 Thomson-Csf Dispositif photosensible lu par transfert de charges, et caméra de télévision comportant un tel dispositif
FR2481553A1 (fr) * 1980-04-23 1981-10-30 Thomson Csf Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif
FR2503502A1 (fr) * 1981-03-31 1982-10-08 Thomson Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges electriques et camera de television comportant un tel dispositif
EP0063061A1 (fr) * 1981-03-31 1982-10-20 Thomson-Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges électriques, et caméra de télévision comportant un tel dispositif
US4453177A (en) * 1981-03-31 1984-06-05 Thomson-Csf Color television camera

Also Published As

Publication number Publication date
SE7606438L (sv) 1976-12-10
IT1061529B (it) 1983-04-30
AU503110B2 (en) 1979-08-23
DE2623541C3 (de) 1980-11-06
CA1065978A (fr) 1979-11-06
DE2623541A1 (de) 1976-12-30
DE2623541B2 (de) 1980-03-20
US4724470A (en) 1988-02-09
ES448628A1 (es) 1977-07-01
CH609490A5 (fr) 1979-02-28
FR2314584B1 (fr) 1979-04-06
NL7506795A (nl) 1976-12-13
JPS51150288A (en) 1976-12-23
NL180157C (nl) 1987-01-02
JPS5615593B2 (fr) 1981-04-10
SE414355B (sv) 1980-07-21
BR7603624A (pt) 1977-02-01
AU1452676A (en) 1977-12-08
MX157678A (es) 1988-12-09
GB1557238A (en) 1979-12-05
NL180157B (nl) 1986-08-01

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Legal Events

Date Code Title Description
ST Notification of lapse