FR2314584B1 - - Google Patents

Info

Publication number
FR2314584B1
FR2314584B1 FR7617352A FR7617352A FR2314584B1 FR 2314584 B1 FR2314584 B1 FR 2314584B1 FR 7617352 A FR7617352 A FR 7617352A FR 7617352 A FR7617352 A FR 7617352A FR 2314584 B1 FR2314584 B1 FR 2314584B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7617352A
Other versions
FR2314584A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2314584A1 publication Critical patent/FR2314584A1/fr
Application granted granted Critical
Publication of FR2314584B1 publication Critical patent/FR2314584B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR7617352A 1975-06-09 1976-06-09 Dispositif capteur d'images Granted FR2314584A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7506795,A NL180157C (nl) 1975-06-09 1975-06-09 Halfgeleider beeldopneeminrichting.

Publications (2)

Publication Number Publication Date
FR2314584A1 FR2314584A1 (fr) 1977-01-07
FR2314584B1 true FR2314584B1 (fr) 1979-04-06

Family

ID=19823918

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7617352A Granted FR2314584A1 (fr) 1975-06-09 1976-06-09 Dispositif capteur d'images

Country Status (14)

Country Link
US (1) US4724470A (fr)
JP (1) JPS51150288A (fr)
AU (1) AU503110B2 (fr)
BR (1) BR7603624A (fr)
CA (1) CA1065978A (fr)
CH (1) CH609490A5 (fr)
DE (1) DE2623541C3 (fr)
ES (1) ES448628A1 (fr)
FR (1) FR2314584A1 (fr)
GB (1) GB1557238A (fr)
IT (1) IT1061529B (fr)
MX (1) MX157678A (fr)
NL (1) NL180157C (fr)
SE (1) SE414355B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345119A (en) * 1976-10-06 1978-04-22 Hitachi Ltd Solid state pickup element
GB1592373A (en) * 1976-12-30 1981-07-08 Ibm Photodetector
JPS5497323A (en) * 1978-01-18 1979-08-01 Matsushita Electric Ind Co Ltd Solid image pickup unit
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4247788A (en) * 1978-10-23 1981-01-27 Westinghouse Electric Corp. Charge transfer device with transistor input signal divider
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
JPS5630373A (en) * 1979-08-20 1981-03-26 Matsushita Electric Ind Co Ltd Solid image pickup unit
DE2943143A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
FR2481553A1 (fr) * 1980-04-23 1981-10-30 Thomson Csf Dispositif photosensible lu par transfert de charges et camera de television comportant un tel dispositif
JPS5762672A (en) * 1980-10-01 1982-04-15 Toshiba Corp Solid-state image pickup sensor
US4488163A (en) * 1981-01-19 1984-12-11 Westinghouse Electric Corp. Highly isolated photodetectors
FR2503502B1 (fr) * 1981-03-31 1985-07-05 Thomson Csf Dispositif d'analyse d'images en couleur utilisant le transfert de charges electriques et camera de television comportant un tel dispositif
JPS589361A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 固体撮像素子
SE442152B (sv) * 1981-11-23 1985-12-02 Olof Engstrom Forfarande for jemforelse av en forsta optisk signal med minst en annan signal
JPS58157264A (ja) * 1982-03-15 1983-09-19 Toshiba Corp 固体撮像装置
US4807007A (en) * 1983-10-03 1989-02-21 Texas Instruments Incorporated Mis infrared detector having a storage area
US4594604A (en) * 1983-10-21 1986-06-10 Westinghouse Electric Corp. Charge coupled device with structures for forward scuppering to reduce noise
JPH0766961B2 (ja) * 1988-10-07 1995-07-19 三菱電機株式会社 固体撮像素子
US5066994A (en) * 1989-03-31 1991-11-19 Eastman Kodak Company Image sensor
US5051797A (en) * 1989-09-05 1991-09-24 Eastman Kodak Company Charge-coupled device (CCD) imager and method of operation
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
US5070380A (en) * 1990-08-13 1991-12-03 Eastman Kodak Company Transfer gate for photodiode to CCD image sensor
US6072204A (en) * 1997-06-23 2000-06-06 Scientific Imaging Technologies, Inc. Thinned CCD
JP3284986B2 (ja) * 1998-12-04 2002-05-27 日本電気株式会社 光電変換素子およびそれを用いた固体撮像装置
JP5037078B2 (ja) * 2006-09-15 2012-09-26 富士フイルム株式会社 固体撮像素子およびその駆動方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714526A (en) * 1971-02-19 1973-01-30 Nasa Phototransistor
US3813541A (en) * 1971-05-17 1974-05-28 Columbia Broadcasting Sys Inc Mos photodiode
GB1437328A (en) * 1972-09-25 1976-05-26 Rca Corp Sensors having recycling means
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US3845295A (en) * 1973-05-02 1974-10-29 Rca Corp Charge-coupled radiation sensing circuit with charge skim-off and reset
US3995302A (en) * 1973-05-07 1976-11-30 Fairchild Camera And Instrument Corporation Transfer gate-less photosensor configuration
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control
NL7411507A (nl) * 1973-10-03 1975-04-07 Fairchild Camera Instr Co Lineair stelsel voorzien van een aantal -aftastorganen.
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens

Also Published As

Publication number Publication date
AU503110B2 (en) 1979-08-23
CA1065978A (fr) 1979-11-06
JPS5615593B2 (fr) 1981-04-10
BR7603624A (pt) 1977-02-01
NL180157B (nl) 1986-08-01
DE2623541A1 (de) 1976-12-30
GB1557238A (en) 1979-12-05
CH609490A5 (fr) 1979-02-28
ES448628A1 (es) 1977-07-01
FR2314584A1 (fr) 1977-01-07
US4724470A (en) 1988-02-09
DE2623541B2 (de) 1980-03-20
IT1061529B (it) 1983-04-30
NL7506795A (nl) 1976-12-13
MX157678A (es) 1988-12-09
DE2623541C3 (de) 1980-11-06
NL180157C (nl) 1987-01-02
SE414355B (sv) 1980-07-21
JPS51150288A (en) 1976-12-23
SE7606438L (sv) 1976-12-10
AU1452676A (en) 1977-12-08

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Legal Events

Date Code Title Description
ST Notification of lapse