GB1431572A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1431572A
GB1431572A GB2562473A GB2562473A GB1431572A GB 1431572 A GB1431572 A GB 1431572A GB 2562473 A GB2562473 A GB 2562473A GB 2562473 A GB2562473 A GB 2562473A GB 1431572 A GB1431572 A GB 1431572A
Authority
GB
United Kingdom
Prior art keywords
layer
resistivity
ohm
thick
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2562473A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1431572A publication Critical patent/GB1431572A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
GB2562473A 1972-06-02 1973-05-30 Semiconductor devices Expired GB1431572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7219924A FR2188267B1 (https=) 1972-06-02 1972-06-02

Publications (1)

Publication Number Publication Date
GB1431572A true GB1431572A (en) 1976-04-07

Family

ID=9099609

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2562473A Expired GB1431572A (en) 1972-06-02 1973-05-30 Semiconductor devices

Country Status (7)

Country Link
JP (1) JPS5149196B2 (https=)
CA (1) CA1003939A (https=)
DE (1) DE2327480A1 (https=)
FR (1) FR2188267B1 (https=)
GB (1) GB1431572A (https=)
IT (1) IT986390B (https=)
NL (1) NL7307377A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217A (en) * 1982-08-06 1984-02-29 Secr Defence Infra red detector arrays
MD4182C1 (ro) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Dispozitiv semiconductor cu joncţiune p-n în relief (variante)
MD4261B1 (ro) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927193B2 (ja) * 1976-11-19 1984-07-04 松下電器産業株式会社 電動機の速度制御装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436613A (en) * 1965-12-29 1969-04-01 Gen Electric High gain silicon photodetector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217A (en) * 1982-08-06 1984-02-29 Secr Defence Infra red detector arrays
MD4182C1 (ro) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Dispozitiv semiconductor cu joncţiune p-n în relief (variante)
MD4261B1 (ro) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante)

Also Published As

Publication number Publication date
JPS5149196B2 (https=) 1976-12-24
FR2188267A1 (https=) 1974-01-18
CA1003939A (en) 1977-01-18
FR2188267B1 (https=) 1976-03-12
IT986390B (it) 1975-01-30
DE2327480A1 (de) 1973-12-13
NL7307377A (https=) 1973-12-04
JPS4944688A (https=) 1974-04-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee