GB1385160A - Mos semiconductor structure with increased field threshold and method for making the same - Google Patents

Mos semiconductor structure with increased field threshold and method for making the same

Info

Publication number
GB1385160A
GB1385160A GB1280373A GB1280373A GB1385160A GB 1385160 A GB1385160 A GB 1385160A GB 1280373 A GB1280373 A GB 1280373A GB 1280373 A GB1280373 A GB 1280373A GB 1385160 A GB1385160 A GB 1385160A
Authority
GB
United Kingdom
Prior art keywords
oxide
grown
mosfet
making
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1280373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of GB1385160A publication Critical patent/GB1385160A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB1280373A 1972-04-24 1973-03-16 Mos semiconductor structure with increased field threshold and method for making the same Expired GB1385160A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24691872A 1972-04-24 1972-04-24

Publications (1)

Publication Number Publication Date
GB1385160A true GB1385160A (en) 1975-02-26

Family

ID=22932770

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1280373A Expired GB1385160A (en) 1972-04-24 1973-03-16 Mos semiconductor structure with increased field threshold and method for making the same

Country Status (8)

Country Link
US (1) US3787251A (https=)
JP (1) JPS5132550B2 (https=)
CA (1) CA977461A (https=)
DE (1) DE2316208B2 (https=)
FR (1) FR2181960B1 (https=)
GB (1) GB1385160A (https=)
IT (1) IT981799B (https=)
NL (1) NL7304322A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE375881B (https=) * 1972-11-17 1975-04-28 Asea Ab
JPS5534582B2 (https=) * 1974-06-24 1980-09-08
US4056825A (en) * 1975-06-30 1977-11-01 International Business Machines Corporation FET device with reduced gate overlap capacitance of source/drain and method of manufacture
US4048350A (en) * 1975-09-19 1977-09-13 International Business Machines Corporation Semiconductor device having reduced surface leakage and methods of manufacture
US5043293A (en) * 1984-05-03 1991-08-27 Texas Instruments Incorporated Dual oxide channel stop for semiconductor devices
JPH01185936A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
US5407850A (en) * 1993-06-29 1995-04-18 Digital Equipment Corporation SOI transistor threshold optimization by use of gate oxide having positive charge
US6629959B2 (en) 1996-02-27 2003-10-07 Injectimed, Inc. Needle tip guard for percutaneous entry needles
DE69733473T2 (de) 1996-02-27 2006-03-16 Injectimed, Inc., Ventura Nadelspitzenschutz für subkutaninjektionen
JP2000174135A (ja) * 1998-12-07 2000-06-23 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345275A (en) * 1964-04-28 1967-10-03 Westinghouse Electric Corp Electrolyte and diffusion process
US3386163A (en) * 1964-08-26 1968-06-04 Ibm Method for fabricating insulated-gate field effect transistor
US3402081A (en) * 1965-06-30 1968-09-17 Ibm Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3560280A (en) * 1965-11-17 1971-02-02 Hitachi Ltd Method of selective removal of oxide coatings in the manufacture of semiconductor devices
US3547717A (en) * 1968-04-29 1970-12-15 Sprague Electric Co Radiation resistant semiconductive device

Also Published As

Publication number Publication date
IT981799B (it) 1974-10-10
CA977461A (en) 1975-11-04
DE2316208B2 (de) 1977-04-28
FR2181960B1 (https=) 1977-09-02
NL7304322A (https=) 1973-10-26
DE2316208A1 (de) 1973-11-08
JPS5132550B2 (https=) 1976-09-13
US3787251A (en) 1974-01-22
JPS4955286A (https=) 1974-05-29
FR2181960A1 (https=) 1973-12-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee