DE2316208B2 - Verfahren zur herstellung einer integrierten mos-schaltung - Google Patents
Verfahren zur herstellung einer integrierten mos-schaltungInfo
- Publication number
- DE2316208B2 DE2316208B2 DE19732316208 DE2316208A DE2316208B2 DE 2316208 B2 DE2316208 B2 DE 2316208B2 DE 19732316208 DE19732316208 DE 19732316208 DE 2316208 A DE2316208 A DE 2316208A DE 2316208 B2 DE2316208 B2 DE 2316208B2
- Authority
- DE
- Germany
- Prior art keywords
- silicon wafer
- oxide layer
- field effect
- insulating layer
- effect transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24691872A | 1972-04-24 | 1972-04-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2316208A1 DE2316208A1 (de) | 1973-11-08 |
| DE2316208B2 true DE2316208B2 (de) | 1977-04-28 |
Family
ID=22932770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732316208 Withdrawn DE2316208B2 (de) | 1972-04-24 | 1973-03-31 | Verfahren zur herstellung einer integrierten mos-schaltung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3787251A (https=) |
| JP (1) | JPS5132550B2 (https=) |
| CA (1) | CA977461A (https=) |
| DE (1) | DE2316208B2 (https=) |
| FR (1) | FR2181960B1 (https=) |
| GB (1) | GB1385160A (https=) |
| IT (1) | IT981799B (https=) |
| NL (1) | NL7304322A (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE375881B (https=) * | 1972-11-17 | 1975-04-28 | Asea Ab | |
| JPS5534582B2 (https=) * | 1974-06-24 | 1980-09-08 | ||
| US4056825A (en) * | 1975-06-30 | 1977-11-01 | International Business Machines Corporation | FET device with reduced gate overlap capacitance of source/drain and method of manufacture |
| US4048350A (en) * | 1975-09-19 | 1977-09-13 | International Business Machines Corporation | Semiconductor device having reduced surface leakage and methods of manufacture |
| US5043293A (en) * | 1984-05-03 | 1991-08-27 | Texas Instruments Incorporated | Dual oxide channel stop for semiconductor devices |
| JPH01185936A (ja) * | 1988-01-21 | 1989-07-25 | Fujitsu Ltd | 半導体装置 |
| US5387530A (en) * | 1993-06-29 | 1995-02-07 | Digital Equipment Corporation | Threshold optimization for soi transistors through use of negative charge in the gate oxide |
| US5407850A (en) * | 1993-06-29 | 1995-04-18 | Digital Equipment Corporation | SOI transistor threshold optimization by use of gate oxide having positive charge |
| US6629959B2 (en) | 1996-02-27 | 2003-10-07 | Injectimed, Inc. | Needle tip guard for percutaneous entry needles |
| DE69733473T2 (de) | 1996-02-27 | 2006-03-16 | Injectimed, Inc., Ventura | Nadelspitzenschutz für subkutaninjektionen |
| JP2000174135A (ja) * | 1998-12-07 | 2000-06-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3345275A (en) * | 1964-04-28 | 1967-10-03 | Westinghouse Electric Corp | Electrolyte and diffusion process |
| US3386163A (en) * | 1964-08-26 | 1968-06-04 | Ibm | Method for fabricating insulated-gate field effect transistor |
| US3402081A (en) * | 1965-06-30 | 1968-09-17 | Ibm | Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby |
| US3447238A (en) * | 1965-08-09 | 1969-06-03 | Raytheon Co | Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide |
| US3560280A (en) * | 1965-11-17 | 1971-02-02 | Hitachi Ltd | Method of selective removal of oxide coatings in the manufacture of semiconductor devices |
| US3547717A (en) * | 1968-04-29 | 1970-12-15 | Sprague Electric Co | Radiation resistant semiconductive device |
-
1972
- 1972-04-24 US US00246918A patent/US3787251A/en not_active Expired - Lifetime
-
1973
- 1973-03-08 CA CA165,624A patent/CA977461A/en not_active Expired
- 1973-03-16 GB GB1280373A patent/GB1385160A/en not_active Expired
- 1973-03-28 NL NL7304322A patent/NL7304322A/xx unknown
- 1973-03-30 IT IT22417/73A patent/IT981799B/it active
- 1973-03-31 DE DE19732316208 patent/DE2316208B2/de not_active Withdrawn
- 1973-04-20 FR FR7314590A patent/FR2181960B1/fr not_active Expired
- 1973-04-24 JP JP48046605A patent/JPS5132550B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT981799B (it) | 1974-10-10 |
| CA977461A (en) | 1975-11-04 |
| FR2181960B1 (https=) | 1977-09-02 |
| NL7304322A (https=) | 1973-10-26 |
| DE2316208A1 (de) | 1973-11-08 |
| JPS5132550B2 (https=) | 1976-09-13 |
| US3787251A (en) | 1974-01-22 |
| JPS4955286A (https=) | 1974-05-29 |
| FR2181960A1 (https=) | 1973-12-07 |
| GB1385160A (en) | 1975-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHN | Withdrawal |