JPS4955286A - - Google Patents

Info

Publication number
JPS4955286A
JPS4955286A JP48046605A JP4660573A JPS4955286A JP S4955286 A JPS4955286 A JP S4955286A JP 48046605 A JP48046605 A JP 48046605A JP 4660573 A JP4660573 A JP 4660573A JP S4955286 A JPS4955286 A JP S4955286A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48046605A
Other languages
Japanese (ja)
Other versions
JPS5132550B2 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4955286A publication Critical patent/JPS4955286A/ja
Publication of JPS5132550B2 publication Critical patent/JPS5132550B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6322Formation by thermal treatments
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP48046605A 1972-04-24 1973-04-24 Expired JPS5132550B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24691872A 1972-04-24 1972-04-24

Publications (2)

Publication Number Publication Date
JPS4955286A true JPS4955286A (https=) 1974-05-29
JPS5132550B2 JPS5132550B2 (https=) 1976-09-13

Family

ID=22932770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48046605A Expired JPS5132550B2 (https=) 1972-04-24 1973-04-24

Country Status (8)

Country Link
US (1) US3787251A (https=)
JP (1) JPS5132550B2 (https=)
CA (1) CA977461A (https=)
DE (1) DE2316208B2 (https=)
FR (1) FR2181960B1 (https=)
GB (1) GB1385160A (https=)
IT (1) IT981799B (https=)
NL (1) NL7304322A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE375881B (https=) * 1972-11-17 1975-04-28 Asea Ab
JPS5534582B2 (https=) * 1974-06-24 1980-09-08
US4056825A (en) * 1975-06-30 1977-11-01 International Business Machines Corporation FET device with reduced gate overlap capacitance of source/drain and method of manufacture
US4048350A (en) * 1975-09-19 1977-09-13 International Business Machines Corporation Semiconductor device having reduced surface leakage and methods of manufacture
US5043293A (en) * 1984-05-03 1991-08-27 Texas Instruments Incorporated Dual oxide channel stop for semiconductor devices
JPH01185936A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
US5407850A (en) * 1993-06-29 1995-04-18 Digital Equipment Corporation SOI transistor threshold optimization by use of gate oxide having positive charge
US6629959B2 (en) 1996-02-27 2003-10-07 Injectimed, Inc. Needle tip guard for percutaneous entry needles
DE69733473T2 (de) 1996-02-27 2006-03-16 Injectimed, Inc., Ventura Nadelspitzenschutz für subkutaninjektionen
JP2000174135A (ja) * 1998-12-07 2000-06-23 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345275A (en) * 1964-04-28 1967-10-03 Westinghouse Electric Corp Electrolyte and diffusion process
US3386163A (en) * 1964-08-26 1968-06-04 Ibm Method for fabricating insulated-gate field effect transistor
US3402081A (en) * 1965-06-30 1968-09-17 Ibm Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3560280A (en) * 1965-11-17 1971-02-02 Hitachi Ltd Method of selective removal of oxide coatings in the manufacture of semiconductor devices
US3547717A (en) * 1968-04-29 1970-12-15 Sprague Electric Co Radiation resistant semiconductive device

Also Published As

Publication number Publication date
IT981799B (it) 1974-10-10
CA977461A (en) 1975-11-04
DE2316208B2 (de) 1977-04-28
FR2181960B1 (https=) 1977-09-02
NL7304322A (https=) 1973-10-26
DE2316208A1 (de) 1973-11-08
JPS5132550B2 (https=) 1976-09-13
US3787251A (en) 1974-01-22
FR2181960A1 (https=) 1973-12-07
GB1385160A (en) 1975-02-26

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