GB1347849A - Metal oxide semiconductor transistors - Google Patents
Metal oxide semiconductor transistorsInfo
- Publication number
- GB1347849A GB1347849A GB1347849DA GB1347849A GB 1347849 A GB1347849 A GB 1347849A GB 1347849D A GB1347849D A GB 1347849DA GB 1347849 A GB1347849 A GB 1347849A
- Authority
- GB
- United Kingdom
- Prior art keywords
- argon
- slice
- baseplate
- islands
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 6
- 229910052786 argon Inorganic materials 0.000 abstract 3
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
1347849 Sputter-etching NATIONAL RESEARCH DEVELOPMENT CORP 13 July 1972 [21 April 1971] 10446/71 Heading B3V [Also in Divisions H1 and C7] A MOST comprising a N-type silicon slice oriented [111] is thermally oxidized in dry O 2 to produce a coating, subsequently annealed in N 2 and rapidly cooled in N 2 ; after which it is sputtered with Mo or Wo. It is then coated with a photoresist apertured to define selected areas, heated, and mounted on baseplate 10 of an exhausted sputtering apparatus into which argon is admitted at reduced pressure. A ceramic insulated copper electrode 2 with a molybdenum sheath 26 and insulated cooling ducts 28 shielded at 34, 35 is connected to RF generator 36 and match network 38 also connected to baseplate 10 and the slice to be etched is placed on sheath 26 (Fig. 1) and the Mo and SiO 2 layers are removed by sputter etching in the exposed areas; after which the enclosed atmosphere is changed to O 2 and sputtering continued to remove the photoresist, after which the slice has openings made to its surface between islands 44, 46 of Mo overlying SiO 2 (Fig. 4). A boron glass layer 54 is then deposited on the surface by pyrolysis of tetra ethyl ortho silicate and triethyl borate in argon carrier, and heated in argon to diffuse Bo into the areas defined by the openings to form drain and source zones 56, 58, which underlap the edges of the islands. Contact windows to the zones and the gate 52 are cut photo mechanically in the glass, and Al is vacuum evaporated and patterned to form contact pads 62, 64, 66 and interconnections; after which the device is thermally annealed in wet N 2 or O 2 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1044671 | 1971-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1347849A true GB1347849A (en) | 1974-02-27 |
Family
ID=9968013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1347849D Expired GB1347849A (en) | 1971-04-21 | 1971-04-21 | Metal oxide semiconductor transistors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1347849A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2159753A (en) * | 1984-03-06 | 1985-12-11 | Asm Fico Tooling | Method and apparatus for cleaning lead pins and the like before soldering operations |
-
1971
- 1971-04-21 GB GB1347849D patent/GB1347849A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2159753A (en) * | 1984-03-06 | 1985-12-11 | Asm Fico Tooling | Method and apparatus for cleaning lead pins and the like before soldering operations |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |