GB1328434A - Method of producing a transistor with an insulated gate electrode - Google Patents
Method of producing a transistor with an insulated gate electrodeInfo
- Publication number
- GB1328434A GB1328434A GB2273471A GB2273471A GB1328434A GB 1328434 A GB1328434 A GB 1328434A GB 2273471 A GB2273471 A GB 2273471A GB 2273471 A GB2273471 A GB 2273471A GB 1328434 A GB1328434 A GB 1328434A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diffusion
- insulation
- igfet
- electrodes
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P10/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702010383 DE2010383A1 (de) | 1970-03-05 | 1970-03-05 | Verfahren zum Herstellen eines Transistors mit isolierter Steuerelektrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1328434A true GB1328434A (en) | 1973-08-30 |
Family
ID=5764172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2273471A Expired GB1328434A (en) | 1970-03-05 | 1971-04-19 | Method of producing a transistor with an insulated gate electrode |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2010383A1 (enExample) |
| FR (1) | FR2081704B3 (enExample) |
| GB (1) | GB1328434A (enExample) |
-
1970
- 1970-03-05 DE DE19702010383 patent/DE2010383A1/de active Pending
- 1970-12-30 FR FR707047191A patent/FR2081704B3/fr not_active Expired
-
1971
- 1971-04-19 GB GB2273471A patent/GB1328434A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2081704A7 (enExample) | 1971-12-10 |
| FR2081704B3 (enExample) | 1973-08-10 |
| DE2010383A1 (de) | 1971-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5736844A (en) | Semiconductor device | |
| GB1242896A (en) | Semiconductor device and method of fabrication | |
| GB1525415A (en) | Mos transistor | |
| JPS57109367A (en) | Semiconductor memory device | |
| GB2016803A (en) | Thin film transistor construction and manufacturing method of the same | |
| GB1328434A (en) | Method of producing a transistor with an insulated gate electrode | |
| GB1260544A (en) | Method for manufacturing semiconductor device | |
| JPS5585068A (en) | Preparation of semiconductor device | |
| GB1301702A (enExample) | ||
| JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
| JPS5534492A (en) | Semiconductor integrated circuit device having mis field effect type transistor and its manufacture | |
| KR910010748A (ko) | 적층형 캐패시터 및 제조방법 | |
| JPS54143076A (en) | Semiconductor device and its manufacture | |
| JPS5461490A (en) | Multi-layer wiring forming method in semiconductor device | |
| JPS6457671A (en) | Semiconductor device and manufacture thereof | |
| GB1409095A (en) | Methods of manufacturing semiconductor devices | |
| GB1494569A (en) | Method of mosigfet fabrication | |
| GB1225227A (enExample) | ||
| JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5642373A (en) | Manufacture of semiconductor device | |
| GB1521625A (en) | Semiconductor devices | |
| JPS6417475A (en) | Manufacture of mos semiconductor device | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS5753958A (ja) | Handotaisochi | |
| JPS577948A (en) | Semiconductor device and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |