GB1521625A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1521625A
GB1521625A GB2479876A GB2479876A GB1521625A GB 1521625 A GB1521625 A GB 1521625A GB 2479876 A GB2479876 A GB 2479876A GB 2479876 A GB2479876 A GB 2479876A GB 1521625 A GB1521625 A GB 1521625A
Authority
GB
United Kingdom
Prior art keywords
layer
opening
parasitic capacitance
region
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2479876A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1521625A publication Critical patent/GB1521625A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1521625 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 15 June 1976 [30 June 1975] 24798/76 Heading H1K In a process for reducing the parasitic capacitance in a region of a semiconductor device, a diffused region 7<SP>1</SP> is formed through an opening 3<SP>1</SP> in an insulating layer 2<SP>1</SP> on the semiconductor substrate 1<SP>1</SP> before growing a layer 5<SP>1</SP> of insulating material beneath layer 2<SP>1</SP> and within opening 3<SP>1</SP> such that the thickness of the layer in the opening is greater than the combined layer thickness adjacent the opening 3<SP>1</SP>. A further opening 9<SP>1</SP> is formed before forming a further insulating layer 13<SP>1</SP> and forming an electrode 15<SP>1</SP> over layer 13<SP>1</SP> and a terminal 16<SP>1</SP> connected to region 7<SP>1</SP>. The parasitic capacitance comprises the insulating layers in regions 10<SP>1</SP> and 11<SP>1</SP> below electrode 15<SP>1</SP>. The process may be applied to the formation of capacitors, or to the fabrication of an IGFET in which a parasitic capacitance exists where the gate electrode overlaps the source and drain regions.
GB2479876A 1975-06-30 1976-06-15 Semiconductor devices Expired GB1521625A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59199575A 1975-06-30 1975-06-30

Publications (1)

Publication Number Publication Date
GB1521625A true GB1521625A (en) 1978-08-16

Family

ID=24368826

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2479876A Expired GB1521625A (en) 1975-06-30 1976-06-15 Semiconductor devices

Country Status (6)

Country Link
JP (1) JPS5228276A (en)
CA (1) CA1049157A (en)
DE (1) DE2621765A1 (en)
FR (1) FR2316745A1 (en)
GB (1) GB1521625A (en)
IT (1) IT1063563B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52112199A (en) * 1976-03-17 1977-09-20 Kyoei Kikou Kk Automatic fastening tool

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899372A (en) * 1973-10-31 1975-08-12 Ibm Process for controlling insulating film thickness across a semiconductor wafer

Also Published As

Publication number Publication date
JPS5228276A (en) 1977-03-03
FR2316745A1 (en) 1977-01-28
FR2316745B1 (en) 1980-09-26
CA1049157A (en) 1979-02-20
DE2621765A1 (en) 1977-01-20
IT1063563B (en) 1985-02-11

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950615