GB1409095A - Methods of manufacturing semiconductor devices - Google Patents

Methods of manufacturing semiconductor devices

Info

Publication number
GB1409095A
GB1409095A GB5395172A GB5395172A GB1409095A GB 1409095 A GB1409095 A GB 1409095A GB 5395172 A GB5395172 A GB 5395172A GB 5395172 A GB5395172 A GB 5395172A GB 1409095 A GB1409095 A GB 1409095A
Authority
GB
United Kingdom
Prior art keywords
layer
source
semi
sunken
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5395172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1409095A publication Critical patent/GB1409095A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
    • G05F1/24—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using bucking or boosting transformers as final control devices
    • G05F1/247—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using bucking or boosting transformers as final control devices with motor in control circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1409095 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 22 Nov 1972 [25 Nov 1971] 53951/72 Heading H1K In the manufacture of a semi-conductor device involving the introduction of impurities into surface zones of a semi-conductor body to provide at least source and drain regions of an IGFET, the semi-conductor surface is subsequently oxidized through a mask to form a sunken insulating oxide layer covering at least part of at least one surface zone, after which part of the sunken layer above a surface zone is partly or wholly removed, a thinner insulating layer being retained or reformed at the same place. As shown, a surface of an N-type silicon body 1 (which may be an epitaxial layer on a low-resistivity substrate) is masked, e.g. by silicon nitride, and thick sunken oxide portions 10 are grown in exposed areas. Using a fresh mask, source and drain regions 2, 3 and a capacitor electrode region 11 are formed by diffusion or boron-ion implantation; then the exposed surface is oxidized to form a sunken oxide layer 7. The mask is removed, and portions of the layer 7 are removed and thin oxide layers such as 12 are grown in their place; gate insulation 6 may be simultaneously provided. Alternatively the layer 7 may be selectively thinned. Thin oxide layers above source and drain regions 2, 3 and part of electrode region 11 are removed, and gate, source and drain electrodes 5, 8, 9, and capacitor counter-electrode 13 and contact 14 are formed by the vapourdeposition or sputtering of aluminium or molybdenum. A further embodiment (Figs. 6a, 6b, not shown) comprises an integrated capacitor memory of the kind described in Specification 1,273,181, in which each of a series of doped surface zones (61) forms the drain region of one device and the source region of the succeeding device. A sunken oxide layer (65) over the surface zones is reduced in thickness except above the source regions adjacent the channel regions (62). Each insulated gate electrode (64) is connected to a conductive layer 71 on the thin oxide (70) above the drain region. Silicon carbide may be the semi-conductor material, and the conductive layers may comprise polycrystalline silicon or successive layers of, e.g., titanium, platinum and gold.
GB5395172A 1971-11-25 1972-11-22 Methods of manufacturing semiconductor devices Expired GB1409095A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7116182A NL7116182A (en) 1971-11-25 1971-11-25

Publications (1)

Publication Number Publication Date
GB1409095A true GB1409095A (en) 1975-10-08

Family

ID=19814543

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5395172A Expired GB1409095A (en) 1971-11-25 1972-11-22 Methods of manufacturing semiconductor devices

Country Status (11)

Country Link
JP (1) JPS4861078A (en)
AR (1) AR194520A1 (en)
AT (1) ATA994272A (en)
AU (1) AU469642B2 (en)
CA (1) CA970077A (en)
DE (1) DE2254821A1 (en)
ES (1) ES408908A1 (en)
FR (1) FR2161003B1 (en)
GB (1) GB1409095A (en)
IT (1) IT975824B (en)
NL (1) NL7116182A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
JPS5534493A (en) * 1978-08-31 1980-03-11 Ibm Bucket brigade cell

Also Published As

Publication number Publication date
IT975824B (en) 1974-08-10
FR2161003A1 (en) 1973-07-06
AR194520A1 (en) 1973-07-23
ATA994272A (en) 1975-08-15
JPS4861078A (en) 1973-08-27
FR2161003B1 (en) 1978-02-03
ES408908A1 (en) 1975-10-16
DE2254821A1 (en) 1973-05-30
NL7116182A (en) 1973-05-29
AU469642B2 (en) 1976-02-19
AU4908072A (en) 1974-05-23
CA970077A (en) 1975-06-24

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee