GB1283639A - Power transistor - Google Patents

Power transistor

Info

Publication number
GB1283639A
GB1283639A GB58916/70A GB5891670A GB1283639A GB 1283639 A GB1283639 A GB 1283639A GB 58916/70 A GB58916/70 A GB 58916/70A GB 5891670 A GB5891670 A GB 5891670A GB 1283639 A GB1283639 A GB 1283639A
Authority
GB
United Kingdom
Prior art keywords
layers
distance
finger
web
fingers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB58916/70A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1283639A publication Critical patent/GB1283639A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
GB58916/70A 1969-12-18 1970-12-11 Power transistor Expired GB1283639A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88629369A 1969-12-18 1969-12-18

Publications (1)

Publication Number Publication Date
GB1283639A true GB1283639A (en) 1972-08-02

Family

ID=25388794

Family Applications (1)

Application Number Title Priority Date Filing Date
GB58916/70A Expired GB1283639A (en) 1969-12-18 1970-12-11 Power transistor

Country Status (6)

Country Link
US (1) US3600646A (cg-RX-API-DMAC7.html)
JP (1) JPS516510B1 (cg-RX-API-DMAC7.html)
BE (1) BE760420A (cg-RX-API-DMAC7.html)
DE (1) DE2062060C3 (cg-RX-API-DMAC7.html)
FR (1) FR2068825B1 (cg-RX-API-DMAC7.html)
GB (1) GB1283639A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
JPS5929791A (ja) * 1982-08-13 1984-02-17 Mitsubishi Electric Corp スクロ−ル圧縮機
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
KR100340648B1 (ko) * 2001-10-22 2002-06-20 염병렬 바이폴라 트랜지스터

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175441A (en) * 1985-05-03 1986-11-26 Texas Instruments Ltd Power bipolar transistor
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor

Also Published As

Publication number Publication date
FR2068825A1 (cg-RX-API-DMAC7.html) 1971-09-03
DE2062060C3 (de) 1979-10-25
BE760420A (fr) 1971-05-27
DE2062060A1 (de) 1971-06-24
JPS516510B1 (cg-RX-API-DMAC7.html) 1976-02-28
FR2068825B1 (cg-RX-API-DMAC7.html) 1974-09-20
US3600646A (en) 1971-08-17
DE2062060B2 (de) 1979-02-22

Similar Documents

Publication Publication Date Title
JPS53124987A (en) Bidirectional thyristor
GB1524864A (en) Monolithic semiconductor arrangements
JPS5366181A (en) High dielectric strength mis type transistor
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5367368A (en) Semiconductor device
JPS5727052A (en) Semiconductor device
JPS5272586A (en) Production of semiconductor device
GB1288384A (cg-RX-API-DMAC7.html)
JPS5214377A (en) Semiconductor device
JPS5636159A (en) Schottky diode
JPS5650562A (en) Transistor
JPS55121679A (en) Short channel v-mos-fet
JPS5353271A (en) Manufacture for semiconductor device
JPS539485A (en) Mesa type semiconductor device
JPS5637677A (en) Silicon planar type thyristor
JPS5383476A (en) Reverse conducting thyristor
JPS5242077A (en) Metal-semiconductor contact type semiconductor device and process for production thereof
GB1425956A (en) Gate controlled switches
JPS51144578A (en) Semiconductor device
JPS5223244A (en) Limiter circuit
JPS5353965A (en) Semiconductor device and its production
JPS57184251A (en) Semiconductor element with control electrode
JPS5419679A (en) Thyristor
JPS5294779A (en) Semiconductor device
JPS5384483A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee