GB1244225A - Improvements in and relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in and relating to methods of manufacturing semiconductor devices

Info

Publication number
GB1244225A
GB1244225A GB61953/68A GB6195368A GB1244225A GB 1244225 A GB1244225 A GB 1244225A GB 61953/68 A GB61953/68 A GB 61953/68A GB 6195368 A GB6195368 A GB 6195368A GB 1244225 A GB1244225 A GB 1244225A
Authority
GB
United Kingdom
Prior art keywords
layer
electrodes
drain regions
ion implantation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB61953/68A
Other languages
English (en)
Inventor
David Phythian Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB61953/68A priority Critical patent/GB1244225A/en
Priority to ZA698728A priority patent/ZA698728B/xx
Priority to DK683869AA priority patent/DK125220B/da
Priority to ES374906A priority patent/ES374906A1/es
Priority to NL6919463A priority patent/NL6919463A/xx
Priority to SE17986/69A priority patent/SE347392B/xx
Priority to BE743829D priority patent/BE743829A/xx
Priority to BR215650/69A priority patent/BR6915650D0/pt
Priority to JP44105411A priority patent/JPS4816034B1/ja
Priority to CH1934069A priority patent/CH514935A/de
Priority to US888543A priority patent/US3650019A/en
Priority to FR6945393A priority patent/FR2027452B1/fr
Priority to DE1965799A priority patent/DE1965799C3/de
Priority to AT1211869A priority patent/AT311420B/de
Publication of GB1244225A publication Critical patent/GB1244225A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
GB61953/68A 1968-12-31 1968-12-31 Improvements in and relating to methods of manufacturing semiconductor devices Expired GB1244225A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
GB61953/68A GB1244225A (en) 1968-12-31 1968-12-31 Improvements in and relating to methods of manufacturing semiconductor devices
ZA698728A ZA698728B (en) 1968-12-31 1969-12-15 Improvements in and relating to methods of manufacturing semiconductor devices
DK683869AA DK125220B (da) 1968-12-31 1969-12-23 Fremgangsmåde til fremstilling af halvlederorganer ved ionimplantering.
ES374906A ES374906A1 (es) 1968-12-31 1969-12-24 Un metodo de fabricar un dispositivo semiconductor.
NL6919463A NL6919463A (https=) 1968-12-31 1969-12-25
SE17986/69A SE347392B (https=) 1968-12-31 1969-12-29
BE743829D BE743829A (https=) 1968-12-31 1969-12-29
BR215650/69A BR6915650D0 (pt) 1968-12-31 1969-12-29 Processo de fabricacao de um dispositivo semicondutor
JP44105411A JPS4816034B1 (https=) 1968-12-31 1969-12-29
CH1934069A CH514935A (de) 1968-12-31 1969-12-29 Verfahren zur Herstellung eines Halbleiterbauelements und durch dieses Verfahren hergestelltes Halbleiterbauelement
US888543A US3650019A (en) 1968-12-31 1969-12-29 Methods of manufacturing semiconductor devices
FR6945393A FR2027452B1 (https=) 1968-12-31 1969-12-30
DE1965799A DE1965799C3 (de) 1968-12-31 1969-12-30 Verfahren zur Herstellung eines Halbleiterbauelementes
AT1211869A AT311420B (de) 1968-12-31 1969-12-30 Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere eines Oberflächen-Feldeffekttransistors mittels Ionenimplantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB61953/68A GB1244225A (en) 1968-12-31 1968-12-31 Improvements in and relating to methods of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
GB1244225A true GB1244225A (en) 1971-08-25

Family

ID=10487686

Family Applications (1)

Application Number Title Priority Date Filing Date
GB61953/68A Expired GB1244225A (en) 1968-12-31 1968-12-31 Improvements in and relating to methods of manufacturing semiconductor devices

Country Status (14)

Country Link
US (1) US3650019A (https=)
JP (1) JPS4816034B1 (https=)
AT (1) AT311420B (https=)
BE (1) BE743829A (https=)
BR (1) BR6915650D0 (https=)
CH (1) CH514935A (https=)
DE (1) DE1965799C3 (https=)
DK (1) DK125220B (https=)
ES (1) ES374906A1 (https=)
FR (1) FR2027452B1 (https=)
GB (1) GB1244225A (https=)
NL (1) NL6919463A (https=)
SE (1) SE347392B (https=)
ZA (1) ZA698728B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759057A (https=) * 1969-11-19 1971-05-17 Philips Nv
GB1289740A (https=) * 1969-12-24 1972-09-20
FR2129992B1 (https=) * 1971-03-25 1974-06-21 Lecrosnier Daniel
US3874937A (en) * 1973-10-31 1975-04-01 Gen Instrument Corp Method for manufacturing metal oxide semiconductor integrated circuit of reduced size
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
US3930893A (en) * 1975-03-03 1976-01-06 Honeywell Information Systems, Inc. Conductivity connected charge-coupled device fabrication process
US4061506A (en) * 1975-05-01 1977-12-06 Texas Instruments Incorporated Correcting doping defects
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
US4171229A (en) * 1977-06-24 1979-10-16 International Business Machines Corporation Improved process to form bucket brigade device
US4142199A (en) * 1977-06-24 1979-02-27 International Business Machines Corporation Bucket brigade device and process
US4224733A (en) * 1977-10-11 1980-09-30 Fujitsu Limited Ion implantation method
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4280271A (en) * 1979-10-11 1981-07-28 Texas Instruments Incorporated Three level interconnect process for manufacture of integrated circuit devices
JPH0834297B2 (ja) * 1988-12-28 1996-03-29 三菱電機株式会社 半導体装置
AU657930B2 (en) * 1991-01-30 1995-03-30 Canon Kabushiki Kaisha Nozzle structures for bubblejet print devices
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
JP6356516B2 (ja) * 2014-07-22 2018-07-11 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
NL6604962A (https=) * 1966-04-14 1967-10-16
GB1233545A (https=) * 1967-08-18 1971-05-26
US3470610A (en) * 1967-08-18 1969-10-07 Conductron Corp Method of producing a control system
US3558366A (en) * 1968-09-17 1971-01-26 Bell Telephone Labor Inc Metal shielding for ion implanted semiconductor device

Also Published As

Publication number Publication date
AT311420B (de) 1973-11-12
US3650019A (en) 1972-03-21
JPS4816034B1 (https=) 1973-05-18
ES374906A1 (es) 1972-03-16
DE1965799C3 (de) 1978-06-01
DK125220B (da) 1973-01-15
FR2027452A1 (https=) 1970-09-25
FR2027452B1 (https=) 1974-02-01
BE743829A (https=) 1970-06-29
NL6919463A (https=) 1970-07-02
ZA698728B (en) 1971-07-28
CH514935A (de) 1971-10-31
BR6915650D0 (pt) 1973-01-02
SE347392B (https=) 1972-07-31
DE1965799B2 (de) 1977-09-29
DE1965799A1 (de) 1970-07-23

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