US3470609A - Method of producing a control system - Google Patents

Method of producing a control system Download PDF

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US3470609A
US3470609A US661586A US3470609DA US3470609A US 3470609 A US3470609 A US 3470609A US 661586 A US661586 A US 661586A US 3470609D A US3470609D A US 3470609DA US 3470609 A US3470609 A US 3470609A
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dielectric layer
layer
insulated
gate
effect device
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Gary C Breitweiser
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Conductron Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Definitions

  • An insulated-gate field-effect device can be rendered substantially free from the effects of migrating ions in the dielectric layer thereof by applying a second dielectric layer over the gate electrode of that insulated-gate field-effect device, by applying an auxiliary electrode over that second dielectric layer, by applying a D.C.
  • This invention relates to improvements in control systems. More particularly, this invention relates to improvements in insulated-gate field-effect devices and in methods of making same.
  • lt is, therefore, an object of the present invention to provide an improved insulated-gate field-effect device and an improved method of making same.
  • An insulated-gate field-effect device customarily includes a layer of semi-conductor, ohmic electrodes that are spaced apart but that are connected by that layer of semi-conductor, dielectric layer that overlies the layer of semi-conductor and the ohmic electrodes, and a gate electrode which overlies that dielectric layer.
  • the application of a varying voltage to that gate and to that layer of semi-conductor will vary the electrical characteristics of that portion of the layer of semi-conductor which interconnects the ohmic electrodes, and thus will control the amount of current flowing between those ohmic electrodes.
  • the present invention provides an insulated-gate field-effect device which is substantially free from changes in the electrical properties thereof due to the migration of ions in the dielectric layer between the gate Velectrode and the layer of semiconductor thereof; and hence it provides an insulated-gate field-effect device which is substantially free from failure due to ion migration. lt is, therefore, an object of the present invention to provide an insulatedgate iield-effect device which is substantially free from changes in the electrical properties thereof due to ion migration in the dielectric layer between the gate electrode and the layer of semi-conductor thereof.
  • the present invention forms a second dielectric layer over the gate electrode of an insulated-gate field-effect device and forms an auxiliary electrode over that second dielectric layer.
  • a D.C. voltage is applied to that auxiliary electrode and also to the layer of semi-conductor of the resulting multi-layer composite structure; and the tem- ICC perature of that multi-layer composite structure is elevated to a level at which temperature-freed ions in the dielectric layers thereof are rendered mobile.
  • Those ions will largely drift out of the dielectric layer between the gate electrode and the layer of semi-conductor and into the second dielectric layer; and the multi-layer composite structure will then be permitted to cool to substantially immobilize those temperature-freed ions in that second dielectric layer.
  • the temperature to which the multi-layer composite structure is elevated during the drifting of the ions is much higher than the temperatures at which the insulated-gate held-effect device will be operated; and hence the substantially immobilized temperature-freed ions in the second dielectric layer ⁇ will tend to remain out of the dielectric layer between the gate electrode and the layer of semi-conductor of the insulated-gate fieldeffect device.
  • that insulated-gate field-effect device will be substantially free from changes in the electrical properties thereof due to ion migration in the dielectric layer between the gate electrode and the layer of semi-conductor thereof.
  • an object of the present invention to form a second dielectric layer over the gate electrode and dielectric layer of an insulatedgate field-effect device, to apply an auxiliary electrode over that second dielectric layer, to apply a D.C. voltage to the resulting multi-layer composite structure while elevating the temperature of that multi-layer composite structure to a level at which temperature-freed ions will drift from the dielectric layer of that insulated-gate fieldeffect device into that second dielectric layer, and to permit that multi-layer composite structure to cool down and thereby substantially immobilize the temperature-freed ions in that second dielectric layer.
  • FIG. l is a plan View of one preferred embodiment of insulated-gate field-effect device that is made in accordance with the principles and teachings of the present invention
  • FIG. 2 is a sectional view, on a larger scale, through part of the insulated-gate field-effect device shown in FIG. 1, and it is taken along the plane indicated by the line 22 in FIG. l, and
  • FIG. 3 is another sectional view through the insulatedgate field-effect device shown in FIG. l, it is on the scale of FIG. 2, and it is taken along the plane indicated by the line 3-3 in FIG. 2.
  • the numeral 10 denotes a layer of semi-conductor; and,l in one preferred embodiment of insulated-gate field-effect device that is made in accordance with the principles and teachings of the present invention, that layer is made of P type silicon.
  • the numeral 12 denotes an electrode of N type silicon which is diffused into the upper surface of the layer 10; and the numeral 14 denotes a further electrode of N type silicon which has been diffused into the upper surface of the layer 10 at a point spaced from the. contact 12.
  • the confronting portions of the electrodes 12 and 14 are spaced apart about ve ten-thousandths of an inch.
  • One of those electrodes can serve as the source electrode of the insulated-gate field-effect device; and the other of those electrodes can serve as the drain electrode of that insulated-gate field-effect device.
  • the numeral 18 denotes a dielectric layer which overlies the electrodes 12 and 14 and overlies portions of the layer 10.
  • that layer is silicon dioxide; and it is formed by oxidizing the upper surface of the layer and the upper surfaces of the electrodes 12 and 14. That dielectric layer is about four millionths of an inch thick. Openings 19 and 21 are formed in that dielectric layer in register with the electrodes 12 and 14; and those openings can easily be formed by an etching process.
  • the numeral denotes a metal grid which overlies part of the dielectric layer 18, overlies the confronting portions of the electrodes 12 and 14, and overlies the portion of the layer 10 between those confronting portions of those electrodes. That metal grid will constitute the gate electrode of the insulated-gate field-effect device shown in FIG. 1.
  • the dielectric layer 18 and the metal grid 20 can be formed in the same manner as the dielectric layer and gate electrode of a standard insulated-gate field-effect device; and that dielectric layer can be identical to the dielectric layer of such an insulated-gate held-effect device.
  • the metal grid 20 is formed so it is open in nature, whereas the gate electrode of a standar-d insulatedgate eld-eiect device is formed so it is imperforate in nature.
  • the layer 10, the electrodes 12 and 14, the dielectric layer 18, and the metal grid 20 constitute an insulated-gate, iield-eifect device which can be similar to any one of a number of insulate-gate field-effect devices that are on the market.
  • the numeral 22 denotes a dielectric layer which overlies the metal grid 20, which overlies part of the dielectric layer 18, which overlies the confronting portions of the electrodes 12 and 14, and which overlies the portion of the layer 10 between those confronting portions of those electrodes. That dielectric layer will preferably have a thickness comparable to the thickness of the dielectric layer 18. While the layer 22 should be a dielectric layer, the dielectric properties of that layer need not be identical, or even closely similar, to the dielectric properties of the dielectric layer 18. A primary requirement of the dielectric layer 22 is that the ions therein have a low level of mobility in the range of temperatures at which the insulatedgate eld-eifect device will 4be operated.
  • the dielectric layer 22 could be made of silicon dioxide, silicon monoxide, silicon nitride, phospho-silicate glass, titanium dioxide, tantalum oxide, or the like; but silicon nitride is particularly desirable, because in silicon nitride the ions have a low level of mobility in the range of temperatures at which insulated-gate field-effect devices normally are operated.
  • the numeral 24 denotes a metal electrode which overlies part of the dielectric layer 22, which overlies the metal grid 20, which overlies part of the dielectric layer 18, which overlies the confronting portions of the electrodes 12 and 14, and which overlies the portion of the layer 10 between those confronting portions of those electrodes. That metal electrode is electrically spaced from the metal grid 20 by the dielectric layer 22.
  • the numeral '25 denotes a metal lead which is connected to the layer 10
  • the numeral 26 denotes a metal lead which is connected to the electrode 12 through the opening 19
  • the numeral 27 denotes a metal lead which is connected to the electrode 14 through the opening 21
  • the numeral 28 denotes a lead-receiving portion of the metal grid 20
  • the numeral 29 denotes a lead-receiving portion of the ⁇ metal electrode 24.
  • the metal leads 26 and 27 can be formed by a vacuum metallization process; and the rest of the insulated-gate field-effect device will be suitably masked during that vacuum metallization process.
  • the lead-'receiving portion 29 of the metal electrode 24 l will be connected to the negative terminal of a source of D.C. voltage, and the metal lead will be connected to the positive terminal of that source of D.C. voltage. That source of DJC. voltage will provide a voltage which should be between one hundred thousand volts per centi- 4 meter of the combined thicknesses of the dielectric layers 18 and 22 and a value somewhat below the values at which those combined dielectric layers will break down. Where the dielectric layers 18 and 22 have a combined thickness of about ten millionths of an inch, the minimum value of the D.C. voltage applied to the lead 25 and the lead-receiving portion 29 will be in the order of two to three volts.
  • the multi-layer composite structure which includes the layer 10, the electrodes 12 and 14, the dielectric layer 18, the metal grid 20, the dielectric layer 22, and the metal electrode 24 will be heated to a temperature in the range of one hundred to three hundred and fty degrees centigrade; and the said voltage will be applied to the lead 25 and to the lead-receiving portion 29 to develop an electric eld across that multi-layer composite structure.
  • a voltage of six volts was applied between the lead 2S and the lead-receiving portion 29, and the temperature of the multi-layer composite structure was raised to two hundred and fifty degrees centigrade. That temperature and that voltage were maintained for one hour.
  • the positive ions within the dielectric layers 18 and 22 will be relatively quite mobile; and, within one hour, the D.C. voltage that is applied to the lead 25 and to the lead-receiving portion 29 of the metal electrode 24 will cause substantially all of the temperature-freed positive ions that are in the dielectric layer 18 and that are in register with the metal electrode 24 to drift successively to the interface between the dielectric layers 18 and 22, through that interface, and then through the dielectric layer 22 to the interface between that dielectric layer and the metal electrode 24.
  • the open nature of the metal grid 20 will enable temperature-freed ions to pass through that metal grid as they flow from the dielectric layer 18 into the dielectric layer 22, and thus will enable substantially all of the temperature-freed ions in all portions of the dielectric layer 18 that are overlain by the dielectric layer 22 to flow into the latter dielectric layer.
  • the multilayer composite structure will be permitted to cool to room temperatures; and, thereupon, the temperature-freed positive ions in the dielectric layers 18 and 22 will become substantially immobile.
  • the voltage can be applied to the lead 25 and to the lead-receiving portion 29 continuously, or disconnected 'from that lead and from that lead-receiving portion.
  • That voltage can be applied to that lead and to that lead-receiving portion is desirable; because the higher-than-normal conceneration of positive ions in the upper part of the layer 22 will cause those positive ions to repel each other, and thus will tend to cause some of those positive ions to drift back toward the dielectric layer 18.
  • the drifting of those positive ions due to the higher-thannormal concentration of positive ions in the upper part of the dielectric layer 22, will be small enough to be acceptable.
  • all such drifting of the positive ions can be prevented.
  • the ability of the positive ions in the dielectric layer 22 to drift will be very limited; because those positive ions are substantially immobile at room temperatures. Moreover, because those positive ions will be outside of the dielectric layer developed between the layer and the metal grid 20, which functions as the gate electrode of the insulatedgate field-effect device, that electric field will not tend to cause those positive ions to try to drift back into the dielectric layer 18. The overall result is that the dielectric layer 18 will have substantially no mobile positive ions therein; and hence the insulated-gate field-effect device of FIGS. 1-3 will be substantially free from failure due to the migration of positive ions, in that dielectric layer, during the operation of that insulated-gate fieldeffect device.
  • the electrodes 12 land 14 are diffused electrodes in the upper surface of the layer 10.
  • the present invention is usable in making thin film, insulated-gate field-effect devices; and, in such insulated-gate field-effect devices, the electrodes 12 and 14 will be thin metal layers. It should also be understood that, if desired, a thin film, insulated-gate field-effect device could be formed so the layers thereof were inverted.
  • a thin film, insulated-gate field-effect device could be formed with the metal electrode 24 on the bottom, with the dielectric layer 22 overlying that metal electrode, with the metal grid overlying that dielectric layer, with the dielectric layer 18 overlying that metal grid, and with the thin film electrodes and the layer 10 of semi-conductor overlying the latter dielectric layer--those thin film electrodes overlying or underlying that layer of semi-conductor, as desired.
  • the layer 10 is a layer of P type semi-conductor.
  • the present invention is usable in making insulated-gate field-effect devices wherein the layer 10 is an N type semi-conductor.
  • the insulated-gate field-effect device is an enhancement-type insulated-gate field-effect device.
  • the present invention is usable in making depletion-type insulated-gate field-effect devices.
  • the present invention is usable in making insulated-gate field-effect devices which have plural gate electrodes.
  • insulated-gate field-effect devices such as depletion-type insulated-gate field-effect devices, wherein NP junctions are present in the layer of semi-conductor
  • the electric field developed by that source of D.C. voltage will not adversely affect, and will not be rendered ineffective by, those NP junctions.
  • the metal electrode 24 can be removed after the multi-layer, composite structure has cooled,down to room temperature levels.
  • the removal of that metal electrode will not affect the higher-than-normal concentration of temperature-freed ions in the upper surface of the dielectric layer 22, iand will not affect the lower-than-normal concentration of temperature-freed ions in the dielectric layer 18.
  • the lead which is connected to the metal grid 20 could be connected to the lead which was connected to the leadreceiving portion 29 of that metal electrode-such connection essentially eliminating any such capacitive effect.
  • the dielectric layer 22 is made from a material that is different from the material of which the dielectric layer 18 is made, there can be an increased resistance to the drifting of temperature-freed ions from the dielectric layer 18 into the dielectric layer 22.
  • that increased resistance to ion drift will not, where the temperature of the multi-layer, composite structure is higher than one hundred degrees centigrade and where that temperature is maintained longer than an hour, be able to prevent the drifting of substantially all of the temperature-freed positive ions in the dielectric layer 18 out of that dielectric layer and into the dielectric layer 22.
  • the D.C. voltage is being applied to the lead 25 and to the lead-receiving portion 29 of the metal electrode 24, the electrodes 12 and 14 and the metal grid will usually be disconnected from any source of voltage. However, after the D.C. voltage is disconnected from the lead 25 and the lead-receiving portion 29 of the metal electrode 24, the electrodes 12 and 14 and the metal grid 20 will be connectable to an appropriate circuit.
  • said D.C. voltage having a value between one hundred thousand volts per centimeter of the combined thicknesses of said dielectric layers and a value somewhat less than the value at which those combined dielectric layers will break down.

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Description

OCt- 7, 1969 G. c. BRElTwElsER 3,470,609
METHOD OF PRODUCING A CONTROL SYSTEM Filed Aug. 18, 1967 United States Patent O 3,470,609 METHOD 0F PRODUCING A CONTROL SYSTE Gary C. Breitweiser, St. Louis, Mo., assignor to Conductron Corporation, St. Charles, Mo., a corporation of Delaware Filed Aug. 18, 1967, Ser. No. 661,586 Int. Cl. B01j 17/00;H01l1l/14 U.S. Cl. 29-571 8 Claims ABSTRACT OF THE DISCLOSURE An insulated-gate field-effect device can be rendered substantially free from the effects of migrating ions in the dielectric layer thereof by applying a second dielectric layer over the gate electrode of that insulated-gate field-effect device, by applying an auxiliary electrode over that second dielectric layer, by applying a D.C. voltage to the resulting multi-layer composite structure while that multi-layer composite structure is held at an elevated temperature to cause temperature-freed ions in the dielectric layers thereof to drift toward that auxiliary electrode, and by permitting that multi-layer composite structure to cool and substantially immobilize those temperature-freed ions, thereby keeping those temperature-freed ions out of the eld between the gate electrode and the semi-conductor of that insulated-gate field-effect device.
This invention relates to improvements in control systems. More particularly, this invention relates to improvements in insulated-gate field-effect devices and in methods of making same.
lt is, therefore, an object of the present invention to provide an improved insulated-gate field-effect device and an improved method of making same.
An insulated-gate field-effect devicecustomarily includes a layer of semi-conductor, ohmic electrodes that are spaced apart but that are connected by that layer of semi-conductor, dielectric layer that overlies the layer of semi-conductor and the ohmic electrodes, and a gate electrode which overlies that dielectric layer. The application of a varying voltage to that gate and to that layer of semi-conductor will vary the electrical characteristics of that portion of the layer of semi-conductor which interconnects the ohmic electrodes, and thus will control the amount of current flowing between those ohmic electrodes. While insulated-gate field-effect devices have been found to be useful, many of those insulated-gate held-effect devices have not operated properly; because some of the ions in the dielectric layers between the layers of semi-conductor and the gate electrodes have tended Y to migrate and to adversely effect the electrical properties of those insulated-gate held-effect devices. The present invention provides an insulated-gate field-effect device which is substantially free from changes in the electrical properties thereof due to the migration of ions in the dielectric layer between the gate Velectrode and the layer of semiconductor thereof; and hence it provides an insulated-gate field-effect device which is substantially free from failure due to ion migration. lt is, therefore, an object of the present invention to provide an insulatedgate iield-effect device which is substantially free from changes in the electrical properties thereof due to ion migration in the dielectric layer between the gate electrode and the layer of semi-conductor thereof.
The present invention forms a second dielectric layer over the gate electrode of an insulated-gate field-effect device and forms an auxiliary electrode over that second dielectric layer. A D.C. voltage is applied to that auxiliary electrode and also to the layer of semi-conductor of the resulting multi-layer composite structure; and the tem- ICC perature of that multi-layer composite structure is elevated to a level at which temperature-freed ions in the dielectric layers thereof are rendered mobile. Those ions will largely drift out of the dielectric layer between the gate electrode and the layer of semi-conductor and into the second dielectric layer; and the multi-layer composite structure will then be permitted to cool to substantially immobilize those temperature-freed ions in that second dielectric layer. The temperature to which the multi-layer composite structure is elevated during the drifting of the ions is much higher than the temperatures at which the insulated-gate held-effect device will be operated; and hence the substantially immobilized temperature-freed ions in the second dielectric layer `will tend to remain out of the dielectric layer between the gate electrode and the layer of semi-conductor of the insulated-gate fieldeffect device. As a result, that insulated-gate field-effect device will be substantially free from changes in the electrical properties thereof due to ion migration in the dielectric layer between the gate electrode and the layer of semi-conductor thereof. It is, therefore, an object of the present invention to form a second dielectric layer over the gate electrode and dielectric layer of an insulatedgate field-effect device, to apply an auxiliary electrode over that second dielectric layer, to apply a D.C. voltage to the resulting multi-layer composite structure while elevating the temperature of that multi-layer composite structure to a level at which temperature-freed ions will drift from the dielectric layer of that insulated-gate fieldeffect device into that second dielectric layer, and to permit that multi-layer composite structure to cool down and thereby substantially immobilize the temperature-freed ions in that second dielectric layer.
Other and further objects and advantages of the present invention should become apparent from an examination of the drawing and accompanying description.
In the drawing and accompanying description a preferred embodiment of the present invention is shown and described but it is to be understood that the drawing and accompanying description are for the purpose of illustration only and do not limit the invention and that the invention will be defined by the appended claims.
ln the drawing, FIG. l is a plan View of one preferred embodiment of insulated-gate field-effect device that is made in accordance with the principles and teachings of the present invention,
FIG. 2 is a sectional view, on a larger scale, through part of the insulated-gate field-effect device shown in FIG. 1, and it is taken along the plane indicated by the line 22 in FIG. l, and
FIG. 3 is another sectional view through the insulatedgate field-effect device shown in FIG. l, it is on the scale of FIG. 2, and it is taken along the plane indicated by the line 3-3 in FIG. 2.
Referring to the drawing in detail, the numeral 10 denotes a layer of semi-conductor; and,l in one preferred embodiment of insulated-gate field-effect device that is made in accordance with the principles and teachings of the present invention, that layer is made of P type silicon. The numeral 12 denotes an electrode of N type silicon which is diffused into the upper surface of the layer 10; and the numeral 14 denotes a further electrode of N type silicon which has been diffused into the upper surface of the layer 10 at a point spaced from the. contact 12. In the said one preferred embodiment of insulated-gate eldeffect device, the confronting portions of the electrodes 12 and 14 are spaced apart about ve ten-thousandths of an inch. One of those electrodes can serve as the source electrode of the insulated-gate field-effect device; and the other of those electrodes can serve as the drain electrode of that insulated-gate field-effect device.
The numeral 18 denotes a dielectric layer which overlies the electrodes 12 and 14 and overlies portions of the layer 10. In the said one preferred embodiment of insulated-gate field-effect device, that layer is silicon dioxide; and it is formed by oxidizing the upper surface of the layer and the upper surfaces of the electrodes 12 and 14. That dielectric layer is about four millionths of an inch thick. Openings 19 and 21 are formed in that dielectric layer in register with the electrodes 12 and 14; and those openings can easily be formed by an etching process.
The numeral denotes a metal grid which overlies part of the dielectric layer 18, overlies the confronting portions of the electrodes 12 and 14, and overlies the portion of the layer 10 between those confronting portions of those electrodes. That metal grid will constitute the gate electrode of the insulated-gate field-effect device shown in FIG. 1. The dielectric layer 18 and the metal grid 20 can be formed in the same manner as the dielectric layer and gate electrode of a standard insulated-gate field-effect device; and that dielectric layer can be identical to the dielectric layer of such an insulated-gate held-effect device. However, the metal grid 20 is formed so it is open in nature, whereas the gate electrode of a standar-d insulatedgate eld-eiect device is formed so it is imperforate in nature. As a lresult, the layer 10, the electrodes 12 and 14, the dielectric layer 18, and the metal grid 20 constitute an insulated-gate, iield-eifect device which can be similar to any one of a number of insulate-gate field-effect devices that are on the market.
The numeral 22 denotes a dielectric layer which overlies the metal grid 20, which overlies part of the dielectric layer 18, which overlies the confronting portions of the electrodes 12 and 14, and which overlies the portion of the layer 10 between those confronting portions of those electrodes. That dielectric layer will preferably have a thickness comparable to the thickness of the dielectric layer 18. While the layer 22 should be a dielectric layer, the dielectric properties of that layer need not be identical, or even closely similar, to the dielectric properties of the dielectric layer 18. A primary requirement of the dielectric layer 22 is that the ions therein have a low level of mobility in the range of temperatures at which the insulatedgate eld-eifect device will 4be operated. The dielectric layer 22 could be made of silicon dioxide, silicon monoxide, silicon nitride, phospho-silicate glass, titanium dioxide, tantalum oxide, or the like; but silicon nitride is particularly desirable, because in silicon nitride the ions have a low level of mobility in the range of temperatures at which insulated-gate field-effect devices normally are operated.
The numeral 24 denotes a metal electrode which overlies part of the dielectric layer 22, which overlies the metal grid 20, which overlies part of the dielectric layer 18, which overlies the confronting portions of the electrodes 12 and 14, and which overlies the portion of the layer 10 between those confronting portions of those electrodes. That metal electrode is electrically spaced from the metal grid 20 by the dielectric layer 22. The numeral '25 denotes a metal lead which is connected to the layer 10, the numeral 26 denotes a metal lead which is connected to the electrode 12 through the opening 19, the numeral 27 denotes a metal lead which is connected to the electrode 14 through the opening 21, the numeral 28 denotes a lead-receiving portion of the metal grid 20, and the numeral 29 denotes a lead-receiving portion of the `metal electrode 24. The metal leads 26 and 27 can be formed by a vacuum metallization process; and the rest of the insulated-gate field-effect device will be suitably masked during that vacuum metallization process.
The lead-'receiving portion 29 of the metal electrode 24 lwill be connected to the negative terminal of a source of D.C. voltage, and the metal lead will be connected to the positive terminal of that source of D.C. voltage. That source of DJC. voltage will provide a voltage which should be between one hundred thousand volts per centi- 4 meter of the combined thicknesses of the dielectric layers 18 and 22 and a value somewhat below the values at which those combined dielectric layers will break down. Where the dielectric layers 18 and 22 have a combined thickness of about ten millionths of an inch, the minimum value of the D.C. voltage applied to the lead 25 and the lead-receiving portion 29 will be in the order of two to three volts. The multi-layer composite structure which includes the layer 10, the electrodes 12 and 14, the dielectric layer 18, the metal grid 20, the dielectric layer 22, and the metal electrode 24 will be heated to a temperature in the range of one hundred to three hundred and fty degrees centigrade; and the said voltage will be applied to the lead 25 and to the lead-receiving portion 29 to develop an electric eld across that multi-layer composite structure. In one preferred embodiment of the present invention, a voltage of six volts was applied between the lead 2S and the lead-receiving portion 29, and the temperature of the multi-layer composite structure was raised to two hundred and fifty degrees centigrade. That temperature and that voltage were maintained for one hour.
At temperatures in the range of one hundred to three hundred and fifty degrees centigrade, many of the ions in the dielectric layers 18 and 22 will become mobile; and those ions will respond to the electric field developed across the multi-layer composite structure to drift toward an oppositely-chargedlead or electrode. In the said preferredembodiment of the present invention, many of the positive ions which are in the dielectric layers 18 and 22 and which are in register with the metal electrode 24 will drift toward the interface between that metal electrade and the dielectric layer 22. Such drifting of those positive ions will increase the concentration of those ions in the dielectric layer 22 and will correspondingly decrease the concentration of those ions in the dielectric layer 18. At a temperature of two hundred and iifty degrees centigrade, the positive ions within the dielectric layers 18 and 22 will be relatively quite mobile; and, within one hour, the D.C. voltage that is applied to the lead 25 and to the lead-receiving portion 29 of the metal electrode 24 will cause substantially all of the temperature-freed positive ions that are in the dielectric layer 18 and that are in register with the metal electrode 24 to drift successively to the interface between the dielectric layers 18 and 22, through that interface, and then through the dielectric layer 22 to the interface between that dielectric layer and the metal electrode 24. The open nature of the metal grid 20 will enable temperature-freed ions to pass through that metal grid as they flow from the dielectric layer 18 into the dielectric layer 22, and thus will enable substantially all of the temperature-freed ions in all portions of the dielectric layer 18 that are overlain by the dielectric layer 22 to flow into the latter dielectric layer. At the end of that one hour, the multilayer composite structure will be permitted to cool to room temperatures; and, thereupon, the temperature-freed positive ions in the dielectric layers 18 and 22 will become substantially immobile. l
During the cooling period, the voltage can be applied to the lead 25 and to the lead-receiving portion 29 continuously, or disconnected 'from that lead and from that lead-receiving portion. Continued application of that voltage to that lead and to that lead-receiving portion is desirable; because the higher-than-normal conceneration of positive ions in the upper part of the layer 22 will cause those positive ions to repel each other, and thus will tend to cause some of those positive ions to drift back toward the dielectric layer 18. Where the cooling of the multilayer composite structure occurs at a relatively rapid rate, the drifting of those positive ions, due to the higher-thannormal concentration of positive ions in the upper part of the dielectric layer 22, will be small enough to be acceptable. However, by continuing to apply the D C. voltage to the lead 25 and to the lead-receiving portion 29, all such drifting of the positive ions can be prevented.
After the temperature of the multi-layer, composite structure has fallen to room temperature levels, the ability of the positive ions in the dielectric layer 22 to drift will be very limited; because those positive ions are substantially immobile at room temperatures. Moreover, because those positive ions will be outside of the dielectric layer developed between the layer and the metal grid 20, which functions as the gate electrode of the insulatedgate field-effect device, that electric field will not tend to cause those positive ions to try to drift back into the dielectric layer 18. The overall result is that the dielectric layer 18 will have substantially no mobile positive ions therein; and hence the insulated-gate field-effect device of FIGS. 1-3 will be substantially free from failure due to the migration of positive ions, in that dielectric layer, during the operation of that insulated-gate fieldeffect device.
In the said preferred embodiment of the present invention, the electrodes 12 land 14 are diffused electrodes in the upper surface of the layer 10. However, it should be understood that the present invention is usable in making thin film, insulated-gate field-effect devices; and, in such insulated-gate field-effect devices, the electrodes 12 and 14 will be thin metal layers. It should also be understood that, if desired, a thin film, insulated-gate field-effect device could be formed so the layers thereof were inverted. Specifically, a thin film, insulated-gate field-effect device could be formed with the metal electrode 24 on the bottom, with the dielectric layer 22 overlying that metal electrode, with the metal grid overlying that dielectric layer, with the dielectric layer 18 overlying that metal grid, and with the thin film electrodes and the layer 10 of semi-conductor overlying the latter dielectric layer--those thin film electrodes overlying or underlying that layer of semi-conductor, as desired.
In the said preferred embodiment of the present invention, the layer 10 is a layer of P type semi-conductor. However, it should be understood that the present invention is usable in making insulated-gate field-effect devices wherein the layer 10 is an N type semi-conductor. In the said preferred embodiment of the present invention, the insulated-gate field-effect device is an enhancement-type insulated-gate field-effect device. However, it should be understood that the present invention is usable in making depletion-type insulated-gate field-effect devices. Further, it should be understood that the present invention is usable in making insulated-gate field-effect devices which have plural gate electrodes. In making insulated-gate field-effect devices, such as depletion-type insulated-gate field-effect devices, wherein NP junctions are present in the layer of semi-conductor, it will be advantageous to connect the one terminal of the source of D.C. voltage to both of the electrodes 26 and 27 or to both of the corresponding thin film electrodes rather than to the electrode 25. Where that is done, the electric field developed by that source of D.C. voltage will not adversely affect, and will not be rendered ineffective by, those NP junctions.
If desired, the metal electrode 24 can be removed after the multi-layer, composite structure has cooled,down to room temperature levels. The removal of that metal electrode will not affect the higher-than-normal concentration of temperature-freed ions in the upper surface of the dielectric layer 22, iand will not affect the lower-than-normal concentration of temperature-freed ions in the dielectric layer 18. However, it should be recognized that it is not necessary to remove that metal electrode; because that metal electrode will not be in the electric field that will be established between the metal grid 20 and the layer 10 of the insulated-gate field-effect device. In any installation wherein the presence of the metal electrode 24 might tend to develop an undesired capacitive effect, the lead which is connected to the metal grid 20 could be connected to the lead which was connected to the leadreceiving portion 29 of that metal electrode-such connection essentially eliminating any such capacitive effect.
Where the dielectric layer 22 is made from a material that is different from the material of which the dielectric layer 18 is made, there can be an increased resistance to the drifting of temperature-freed ions from the dielectric layer 18 into the dielectric layer 22. However, that increased resistance to ion drift will not, where the temperature of the multi-layer, composite structure is higher than one hundred degrees centigrade and where that temperature is maintained longer than an hour, be able to prevent the drifting of substantially all of the temperature-freed positive ions in the dielectric layer 18 out of that dielectric layer and into the dielectric layer 22. While the D.C. voltage is being applied to the lead 25 and to the lead-receiving portion 29 of the metal electrode 24, the electrodes 12 and 14 and the metal grid will usually be disconnected from any source of voltage. However, after the D.C. voltage is disconnected from the lead 25 and the lead-receiving portion 29 of the metal electrode 24, the electrodes 12 and 14 and the metal grid 20 will be connectable to an appropriate circuit.
Whereas the drawing and accompanying description have shown and described a preferred embodiment of the present invention, it should be apparent to those skilled in the art that various changes may be made in the form of the invention without affecting the scope thereof.
What I claim is:
1. The method of reducing ion migration within an insulated-gate field-effect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulatedgate field-effect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate field-effect device, heating the resulting multi-layer composite structure and applying a D C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate fieldeffect device to cause temperature-freed ions in said dielectric layer of said insulated-gate field-effect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ions in said second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulatedgate field-effect device is lower than normal.
2. The method of reducing lion migration within an insulated-gate field-effect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulatedgate field-effect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate field-effect device, heating the resulting multi-layer composite structure and applying a D.C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate field-effect device to cause temperature-freed ions in said dielectric layer of said insulated-gate field-effect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ions in said second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulatedgate field-effect device is lower than normal, said D C. voltage being applied to said second dielectric layer and to said layer of semi-conductor of said insulated-gate fieldeffect device so it has a polarity which makes said second dielectric layer negative relative to said layer 0f semiconductor, said D.C. voltage also making said second dielectric layer negative relative to said dielectric layer of said insulated-gate field-effect device.
3. The method of reducing ion migration within an insulated-gate field-effect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulated-gate field-effect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate held-effect device, heating the resulting multi-layer composite structure and applying a D C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate eld-eifect device to cause temperature-freed ions in said dielectric layer of said insulated-gate eld-etect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ions in said second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulatedgate field-effect device is lower than normal, said temperature being in the range of one hundred to three hundred and fifty degrees centigrade.
4. The method of reducing ion migration within an insulated-gate field-effect device that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of `the electrode and at least a portion of the dielectric layer of said insulated-gate held-effect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate field-effect device, heating the resulting multi-layer composite structure and applying a D.C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate field-effect device to cause temperature-freed ions in said dielectric layer of said insulated-gate held-effect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ions in said second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulatedgate feld-eiect device is lower than normal, said D.C. voltage having a value between one hundred thousand volts per centimeter of the combined thicknesses of said dielectric layers and a value somewhat less than the value at which those combined dielectric layers will break down.
5. The method of reducing ion migration within an insulated-gate field-effect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulated-gate eld-eiect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate field-effect device, heating the resulting multi-layer composite structure and applying a D.C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate held-effect device to cause temperature-freed ions in said dielectric layer of said insulated-gate field-effect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ions in said second dielectric layer, whereby the percentage of temperature-freed ions in Said dielectric layer of said insulatedgate iield-elr'ect device is lower than normal, said temperature being in the range of one hundred to three hundred and fty degrees centigrade and said voltage having a value between one hundred thousand volts per centimeter of the combined thicknesses of said dielectric layers and a value somewhat less than the value at which those combined dielectric layers will break down.
6. The method of reducing ion migration within an insulated-gate field-effect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulated-gate field-effect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate held-effect device, heating the resulting multi-layer composite structure and applying a D.C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate field-effect device to cause temperature-freed ions in said dielectric layer of said insulated-gate eld-eifect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ionsin said second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulatedgate eld-eiect device is lower than normal, electrodes engaging said layer of semi-conductor and underlying said dielectric layer of said insulated-gate field-effect device, and forming a further electrode so it overlies said second dielectric layer and is in register with the confronting portions of said electrodes.
7. The method of reducing ion migration within an insulated-gate field-effect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulated-gate field-elfect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate field-effect device, heating the resulting multi-layer cornposite structure and applying a D.C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate iield-efect device to cause temperature-freed ions in said dielectric layer of said insulatedgate field-effect device to drift into said second dielectric layer, and subsequently cooling said multi-layer cornposite structure to substantially immobilize said temperature-freed ions in said Second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulated-gate ield-elect device is lower than normal, making said electrode of said insulated-gate eld-elect device open in nature so temperature-freed ions can flow through it as they flow from said first said dielectric layer into said second dielectric layer in response to said D.C. voltage.
8. The method of reducing ion migration within an insulated-gate field-eiect device, that has a layer of semiconductor and a dielectric layer and an electrode, which comprises overlying at least a portion of the electrode and at least a portion of the dielectric layer of said insulated-gate held-effect device with a second dielectric layer, said second dielectric layer abutting said portion of said dielectric layer of said insulated-gate field-effect device, heating the resulting multi-layer composite structure and applying a D C. voltage to said second dielectric layer and to the layer of semi-conductor of said insulated-gate field-effect device to cause temperature-freed ions in said dielectric layer of said insulated-gate fieldeffect device to drift into said second dielectric layer, and subsequently cooling said multi-layer composite structure to substantially immobilize said temperature-freed ions in said second dielectric layer, whereby the percentage of temperature-freed ions in said dielectric layer of said insulated-gate field-effect device is lower than normal, forming a further electrode at the outer surface on said second dielectric layer, and applying said D.C. voltage to said second dielectric layer via said further electrode.
References Cited UNITED STATES PATENTS PAUL M, COHEN, Primary Examiner U.S. C1. XR.
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JPS57177559A (en) * 1981-04-24 1982-11-01 Fujitsu Ltd Semiconductor device and manufacture thereof
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US4398340A (en) * 1982-04-26 1983-08-16 The United States Of America As Represented By The Secretary Of The Army Method for making thin film field effect transistors
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Cited By (7)

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Publication number Priority date Publication date Assignee Title
US3651565A (en) * 1968-09-09 1972-03-28 Nat Semiconductor Corp Lateral transistor structure and method of making the same
US3650019A (en) * 1968-12-31 1972-03-21 Philips Corp Methods of manufacturing semiconductor devices
US3611071A (en) * 1969-04-10 1971-10-05 Ibm Inversion prevention system for semiconductor devices
US3614548A (en) * 1969-06-18 1971-10-19 Matsushita Electronics Corp Semiconductor device having a t{11 o{11 -s{11 o{11 {0 composite oxide layer
US3698078A (en) * 1969-12-22 1972-10-17 Gen Electric Diode array storage system having a self-registered target and method of forming
US4439588A (en) * 1974-06-27 1984-03-27 Ceskoslovenska Akademie Ved. Polymers of pivaloyloxyalkyl methacrylates, method for their preparation and modification
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