FR2129992B1 - - Google Patents
Info
- Publication number
- FR2129992B1 FR2129992B1 FR717110570A FR7110570A FR2129992B1 FR 2129992 B1 FR2129992 B1 FR 2129992B1 FR 717110570 A FR717110570 A FR 717110570A FR 7110570 A FR7110570 A FR 7110570A FR 2129992 B1 FR2129992 B1 FR 2129992B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR717110570A FR2129992B1 (https=) | 1971-03-25 | 1971-03-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR717110570A FR2129992B1 (https=) | 1971-03-25 | 1971-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2129992A1 FR2129992A1 (https=) | 1972-11-03 |
| FR2129992B1 true FR2129992B1 (https=) | 1974-06-21 |
Family
ID=9074121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR717110570A Expired FR2129992B1 (https=) | 1971-03-25 | 1971-03-25 |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2129992B1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1079438B1 (en) * | 1995-12-29 | 2008-07-09 | Texas Instruments Incorporated | High frequency semiconductor device |
| US5910665A (en) * | 1995-12-29 | 1999-06-08 | Texas Instruments Incorporated | Low capacitance power VFET method and device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1536107A (fr) * | 1966-09-09 | 1968-08-09 | Ass Elect Ind | Perfectionnements aux dispositifs à semiconducteur |
| US3586542A (en) * | 1968-11-22 | 1971-06-22 | Bell Telephone Labor Inc | Semiconductor junction devices |
| GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
-
1971
- 1971-03-25 FR FR717110570A patent/FR2129992B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2129992A1 (https=) | 1972-11-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |