GB1336780A - Integrated circuit and method of manufacturing same - Google Patents
Integrated circuit and method of manufacturing sameInfo
- Publication number
- GB1336780A GB1336780A GB4524671A GB4524671A GB1336780A GB 1336780 A GB1336780 A GB 1336780A GB 4524671 A GB4524671 A GB 4524671A GB 4524671 A GB4524671 A GB 4524671A GB 1336780 A GB1336780 A GB 1336780A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- doped
- region
- oxide layer
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 7
- 239000002184 metal Substances 0.000 abstract 4
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
1336780 Semi-conductor devices THOMSONCSF 28 Sept 1971 [2 Oct 1970] 45246/71 Heading H1K An integrated S/C circuit (Figs. 1, 2) comprises an e.g. N doped Si wafer 1 covered with a layer 2 of Si, O 2 in which are formed a P + doped source region 3 with grounded metal contact 32, a P doped channel 7, and a N+ doped gate region 9 with metal contact 92 extending into a further area to form contact 10 wider than the plate, deposited on an exposed substrate zone 101 and overlapping the oxide layer. A P+ doped region 4 forms the drain region, with metal contact 42 and further contact 43 connected thereto extending over the oxide; and a P doped region 81 constitutes a load resistor extending from region 4 to a P + doped region 5 which with an inlet contact 52 forms a negative D.C. supply input. A substrate zone 111 overlapping the oxide layer with metal contact 11 overlying the oxide layer is connected to bias source, and the substrate between zones 101, 111 constitutes a bias resistor Rp; and an elementary amplifier circuit is thus formed (Fig. 3, not shown). In manufacture, the oxide layer is formed by cathode sputtering or wet thermal oxidation, and the necessary windows therein are etched through a resin mask apertured electronically by the modulated beam of an electron microscope under analogue or digital control of the mask configuration. P-Regions 3, 4, 5, 7, 8 are formed by ionic implantation of e.g. Bo; the regions 3, 4, 5 having a high P + concentration and regions 7, 8 having a lower P - concentration. The element is then thermally annealed, and oxide layer 2 is reconstituted by cathode sputtering in zones 3, 4, 5, 7, Rc. Further windows delimiting zones 9, 101, 111 are etched using an electronically apertured mask, and P doping is ionically implanted to obtain gate region 9 and the ohmic substrate contacts 101, 111 delimiting Rp. After further annealing, windows to zones 3, 4, 5 are etched through an electronically apertured mask to expose the substrate, Al is vapour deposited, and further electronic masking and etching delimits the integrated circuit connections and contacts while preserving regions 3, 32, 4, 5, 9, 52, 101 and 111. Schottky gates may be used instead of implanted gates, and the substrate may be other than Si. Individual components are isolated initially by the substrate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7035702A FR2108770B1 (en) | 1970-10-02 | 1970-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1336780A true GB1336780A (en) | 1973-11-07 |
Family
ID=9062203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4524671A Expired GB1336780A (en) | 1970-10-02 | 1971-09-28 | Integrated circuit and method of manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS56110668U (en) |
| CA (1) | CA955690A (en) |
| DE (1) | DE2149154A1 (en) |
| FR (1) | FR2108770B1 (en) |
| GB (1) | GB1336780A (en) |
| NL (1) | NL159816B (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4622043A (en) * | 1978-06-19 | 1986-11-11 | Rca Corporation | Textile dyeing process: multicolor pattern dyeing of tufted nylon carpet |
-
1970
- 1970-10-02 FR FR7035702A patent/FR2108770B1/fr not_active Expired
-
1971
- 1971-09-27 NL NL7113236A patent/NL159816B/en not_active IP Right Cessation
- 1971-09-28 GB GB4524671A patent/GB1336780A/en not_active Expired
- 1971-10-01 CA CA124,241A patent/CA955690A/en not_active Expired
- 1971-10-01 DE DE19712149154 patent/DE2149154A1/en not_active Ceased
-
1980
- 1980-08-19 JP JP11645380U patent/JPS56110668U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2108770B1 (en) | 1973-11-23 |
| FR2108770A1 (en) | 1972-05-26 |
| NL7113236A (en) | 1972-04-05 |
| CA955690A (en) | 1974-10-01 |
| JPS56110668U (en) | 1981-08-27 |
| NL159816B (en) | 1979-03-15 |
| DE2149154A1 (en) | 1972-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |