GB1212379A - Improvements in or relating to methods of making semiconductor devices - Google Patents

Improvements in or relating to methods of making semiconductor devices

Info

Publication number
GB1212379A
GB1212379A GB57551/67A GB5755167A GB1212379A GB 1212379 A GB1212379 A GB 1212379A GB 57551/67 A GB57551/67 A GB 57551/67A GB 5755167 A GB5755167 A GB 5755167A GB 1212379 A GB1212379 A GB 1212379A
Authority
GB
United Kingdom
Prior art keywords
plane
etch rate
mask
etching
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB57551/67A
Other languages
English (en)
Inventor
Roger Clyde Kragness
Herbert Atkin Waggener
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1212379A publication Critical patent/GB1212379A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/021Manufacture or treatment of air gaps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/32Alkaline compositions
    • C23F1/40Alkaline compositions for etching other metallic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/644Anisotropic liquid etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20Air gaps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
GB57551/67A 1966-12-20 1967-12-19 Improvements in or relating to methods of making semiconductor devices Expired GB1212379A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60329266A 1966-12-20 1966-12-20

Publications (1)

Publication Number Publication Date
GB1212379A true GB1212379A (en) 1970-11-18

Family

ID=24414811

Family Applications (1)

Application Number Title Priority Date Filing Date
GB57551/67A Expired GB1212379A (en) 1966-12-20 1967-12-19 Improvements in or relating to methods of making semiconductor devices

Country Status (7)

Country Link
BE (1) BE708163A (https=)
DE (1) DE1621532B2 (https=)
FR (1) FR1548079A (https=)
GB (1) GB1212379A (https=)
MY (1) MY7300447A (https=)
NL (1) NL144778B (https=)
SE (1) SE342526B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2264588A (en) * 1992-02-26 1993-09-01 Philips Electronics Uk Ltd Manufacture of etched substrates such as infrared detectors

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1288278A (https=) * 1968-12-31 1972-09-06
US3844858A (en) * 1968-12-31 1974-10-29 Texas Instruments Inc Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
CA957782A (en) * 1970-01-26 1974-11-12 Theodore Kamprath Capacitor structure for integrated circuits
DE2106540A1 (de) * 1970-02-13 1971-08-19 Texas Instruments Inc Halbleiterschaltung und Verfahren zu ihrer Herstellung
US4668333A (en) * 1985-12-13 1987-05-26 Xerox Corporation Image sensor array for assembly with like arrays to form a longer array
EP0296348B1 (de) * 1987-05-27 1993-03-31 Siemens Aktiengesellschaft Ätzverfahren zum Erzeugen von Lochöffnungen oder Gräben in n-dotiertem Silizium
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2264588A (en) * 1992-02-26 1993-09-01 Philips Electronics Uk Ltd Manufacture of etched substrates such as infrared detectors
GB2264588B (en) * 1992-02-26 1995-12-13 Philips Electronics Uk Ltd Manufacture of etched substrates such as infared detectors
US5647954A (en) * 1992-02-26 1997-07-15 Gec Marconi Limited Manufacture of etched substrates such as infrared detectors

Also Published As

Publication number Publication date
NL6716390A (https=) 1968-06-21
BE708163A (https=) 1968-05-02
SE342526B (https=) 1972-02-07
MY7300447A (en) 1973-12-31
NL144778B (nl) 1975-01-15
FR1548079A (https=) 1968-11-29
DE1621532B2 (de) 1971-10-07
DE1621532A1 (de) 1970-10-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee