GB1161647A - Thin Film Field-Effect Solid State Devices - Google Patents
Thin Film Field-Effect Solid State DevicesInfo
- Publication number
- GB1161647A GB1161647A GB33569/68A GB3356968A GB1161647A GB 1161647 A GB1161647 A GB 1161647A GB 33569/68 A GB33569/68 A GB 33569/68A GB 3356968 A GB3356968 A GB 3356968A GB 1161647 A GB1161647 A GB 1161647A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- layer
- vapour
- plasma
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 6
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000007743 anodising Methods 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000523 sample Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65854167A | 1967-08-04 | 1967-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1161647A true GB1161647A (en) | 1969-08-13 |
Family
ID=24641673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33569/68A Expired GB1161647A (en) | 1967-08-04 | 1968-07-15 | Thin Film Field-Effect Solid State Devices |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1764756B2 (enrdf_load_stackoverflow) |
| FR (1) | FR1572063A (enrdf_load_stackoverflow) |
| GB (1) | GB1161647A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2322461A1 (fr) * | 1975-08-29 | 1977-03-25 | Westinghouse Electric Corp | Transistor a film mince |
| FR2378355A1 (fr) * | 1977-01-26 | 1978-08-18 | Westinghouse Electric Corp | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2704312A1 (de) * | 1976-08-20 | 1978-02-23 | Westinghouse Electric Corp | Duennschicht-transistoreinrichtung |
| JPS58100461A (ja) * | 1981-12-10 | 1983-06-15 | Japan Electronic Ind Dev Assoc<Jeida> | 薄膜トランジスタの製造方法 |
-
1968
- 1968-07-15 GB GB33569/68A patent/GB1161647A/en not_active Expired
- 1968-07-18 FR FR1572063D patent/FR1572063A/fr not_active Expired
- 1968-07-31 DE DE19681764756 patent/DE1764756B2/de active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2322461A1 (fr) * | 1975-08-29 | 1977-03-25 | Westinghouse Electric Corp | Transistor a film mince |
| FR2378355A1 (fr) * | 1977-01-26 | 1978-08-18 | Westinghouse Electric Corp | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1764756A1 (de) | 1972-01-13 |
| DE1764756B2 (de) | 1973-07-19 |
| DE1764756C3 (enrdf_load_stackoverflow) | 1974-02-21 |
| FR1572063A (enrdf_load_stackoverflow) | 1969-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |