GB1147355A - Improvements in or relating to semi-conductor switching elements - Google Patents
Improvements in or relating to semi-conductor switching elementsInfo
- Publication number
- GB1147355A GB1147355A GB48188/66A GB4818866A GB1147355A GB 1147355 A GB1147355 A GB 1147355A GB 48188/66 A GB48188/66 A GB 48188/66A GB 4818866 A GB4818866 A GB 4818866A GB 1147355 A GB1147355 A GB 1147355A
- Authority
- GB
- United Kingdom
- Prior art keywords
- antimony
- layer
- semi
- electrode
- selenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
- 229910052711 selenium Inorganic materials 0.000 abstract 2
- 239000011669 selenium Substances 0.000 abstract 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000005864 Sulphur Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910021476 group 6 element Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1965D0048616 DE1261252C2 (de) | 1965-11-10 | 1965-11-10 | Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1147355A true GB1147355A (en) | 1969-04-02 |
Family
ID=7051308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB48188/66A Expired GB1147355A (en) | 1965-11-10 | 1966-10-27 | Improvements in or relating to semi-conductor switching elements |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7515454B2 (en) | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3203803B2 (ja) * | 1992-09-01 | 2001-08-27 | 株式会社デンソー | サーミスタ式温度センサ |
| DE102005001253A1 (de) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Speicherzellenanordnung, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
| US2968014A (en) * | 1959-04-01 | 1961-01-10 | Kentucky Res Foundation | Synthetic stibnite crystal and method for producing the same |
| NL283345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1961-09-19 |
-
1965
- 1965-11-10 DE DE1965D0048616 patent/DE1261252C2/de not_active Expired
-
1966
- 1966-10-19 AT AT975566A patent/AT266264B/de active
- 1966-10-21 CH CH1541566A patent/CH454297A/de unknown
- 1966-10-27 GB GB48188/66A patent/GB1147355A/en not_active Expired
- 1966-10-27 NL NL6615217A patent/NL6615217A/xx unknown
- 1966-10-27 BE BE688955D patent/BE688955A/xx unknown
- 1966-11-09 FR FR83092A patent/FR1498954A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7515454B2 (en) | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| BE688955A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-03-31 |
| FR1498954A (fr) | 1967-10-20 |
| DE1261252C2 (de) | 1974-01-03 |
| NL6615217A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-05-11 |
| DE1261252B (de) | 1968-02-15 |
| CH454297A (de) | 1968-04-15 |
| AT266264B (de) | 1968-11-11 |
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