FR87873E - Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés - Google Patents
Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrésInfo
- Publication number
- FR87873E FR87873E FR6722A FR6722A FR87873E FR 87873 E FR87873 E FR 87873E FR 6722 A FR6722 A FR 6722A FR 6722 A FR6722 A FR 6722A FR 87873 E FR87873 E FR 87873E
- Authority
- FR
- France
- Prior art keywords
- enhancements
- field effect
- semiconductor devices
- effect semiconductor
- integrated multichannel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR942896A FR1377330A (fr) | 1963-07-26 | 1963-07-26 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
DET26654A DE1293900B (de) | 1963-07-26 | 1964-07-23 | Feldeffekt-Halbleiterbauelement |
NL646408428A NL143734B (nl) | 1963-07-26 | 1964-07-23 | Werkwijze voor het vervaardigen van een halfgeleiderveldeffectinrichting en halfgeleiderveldeffectinrichting verkregen volgens deze werkwijze. |
CH970464A CH414872A (fr) | 1963-07-26 | 1964-07-24 | Dispositif semi-conducteur à effet de champ à canaux multiples intégrés |
US385023A US3372316A (en) | 1963-07-26 | 1964-07-24 | Integral grid and multichannel field effect devices |
GB30972/64A GB1045314A (en) | 1963-07-26 | 1964-08-04 | Improvements relating to semiconductor devices |
FR6722A FR87873E (fr) | 1963-07-26 | 1965-02-23 | Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés |
CH231666A CH429953A (fr) | 1963-07-26 | 1966-02-17 | Dispositif semiconducteur |
US528896A US3407342A (en) | 1963-07-26 | 1966-02-21 | Integral grid and multichannel field effect devices |
GB7612/66A GB1090696A (en) | 1963-07-26 | 1966-02-22 | Improvements in or relating to semiconductor devices |
NL666602337A NL152119B (nl) | 1963-07-26 | 1966-02-23 | Veldeffecttransistor waarbij het stuurgebied door een p-n-overgang van het kanaal is gescheiden. |
DE1514932A DE1514932C3 (de) | 1963-07-26 | 1966-02-23 | Halbleiterbauelement mit Feldeffekt |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR942896A FR1377330A (fr) | 1963-07-26 | 1963-07-26 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
FR6722A FR87873E (fr) | 1963-07-26 | 1965-02-23 | Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés |
Publications (1)
Publication Number | Publication Date |
---|---|
FR87873E true FR87873E (fr) | 1966-07-08 |
Family
ID=26162207
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR942896A Expired FR1377330A (fr) | 1963-07-26 | 1963-07-26 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
FR6722A Expired FR87873E (fr) | 1963-07-26 | 1965-02-23 | Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR942896A Expired FR1377330A (fr) | 1963-07-26 | 1963-07-26 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
Country Status (6)
Country | Link |
---|---|
US (2) | US3372316A (fr) |
CH (2) | CH414872A (fr) |
DE (2) | DE1293900B (fr) |
FR (2) | FR1377330A (fr) |
GB (2) | GB1045314A (fr) |
NL (2) | NL143734B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0729188A2 (fr) * | 1995-02-21 | 1996-08-28 | Nec Corporation | Dispositif semi-conducteur avec transistors à effet de champ à junction |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1377330A (fr) * | 1963-07-26 | 1964-11-06 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés | |
US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
US3443172A (en) * | 1965-11-16 | 1969-05-06 | Monsanto Co | Low capacitance field effect transistor |
IT981240B (it) * | 1972-03-10 | 1974-10-10 | Teszner S | Perfezionamenti ai gridistori per iperfrequenze |
JPS5017771A (fr) * | 1973-06-15 | 1975-02-25 | ||
US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
US4633281A (en) * | 1984-06-08 | 1986-12-30 | Eaton Corporation | Dual stack power JFET with buried field shaping depletion regions |
US4670764A (en) * | 1984-06-08 | 1987-06-02 | Eaton Corporation | Multi-channel power JFET with buried field shaping regions |
EP0167810A1 (fr) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | JFET de puissance comportant plusieurs pincements latéraux |
US4959697A (en) * | 1988-07-20 | 1990-09-25 | Vtc Incorporated | Short channel junction field effect transistor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
GB912114A (en) * | 1960-09-26 | 1962-12-05 | Westinghouse Electric Corp | Semiconductor devices |
FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
FR1329626A (fr) * | 1962-04-04 | 1963-06-14 | Europ Des Semi Conducteurs Soc | Perfectionnements aux transistors à effet de champ, de hautes performances |
US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
FR1377330A (fr) * | 1963-07-26 | 1964-11-06 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
-
1963
- 1963-07-26 FR FR942896A patent/FR1377330A/fr not_active Expired
-
1964
- 1964-07-23 NL NL646408428A patent/NL143734B/xx unknown
- 1964-07-23 DE DET26654A patent/DE1293900B/de not_active Withdrawn
- 1964-07-24 CH CH970464A patent/CH414872A/fr unknown
- 1964-07-24 US US385023A patent/US3372316A/en not_active Expired - Lifetime
- 1964-08-04 GB GB30972/64A patent/GB1045314A/en not_active Expired
-
1965
- 1965-02-23 FR FR6722A patent/FR87873E/fr not_active Expired
-
1966
- 1966-02-17 CH CH231666A patent/CH429953A/fr unknown
- 1966-02-21 US US528896A patent/US3407342A/en not_active Expired - Lifetime
- 1966-02-22 GB GB7612/66A patent/GB1090696A/en not_active Expired
- 1966-02-23 NL NL666602337A patent/NL152119B/xx unknown
- 1966-02-23 DE DE1514932A patent/DE1514932C3/de not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0729188A2 (fr) * | 1995-02-21 | 1996-08-28 | Nec Corporation | Dispositif semi-conducteur avec transistors à effet de champ à junction |
EP0729188A3 (fr) * | 1995-02-21 | 1997-09-17 | Nec Corp | Dispositif semi-conducteur avec transistors à effet de champ à junction |
Also Published As
Publication number | Publication date |
---|---|
FR1377330A (fr) | 1964-11-06 |
US3372316A (en) | 1968-03-05 |
US3407342A (en) | 1968-10-22 |
CH414872A (fr) | 1966-06-15 |
NL143734B (nl) | 1974-10-15 |
NL6408428A (fr) | 1965-01-27 |
DE1514932B2 (de) | 1974-06-12 |
NL152119B (nl) | 1977-01-17 |
DE1293900B (de) | 1969-04-30 |
DE1514932A1 (de) | 1969-09-11 |
GB1045314A (en) | 1966-10-12 |
NL6602337A (fr) | 1966-08-24 |
DE1514932C3 (de) | 1975-01-30 |
GB1090696A (en) | 1967-11-15 |
CH429953A (fr) | 1967-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1516386A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1507686A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1513146A (fr) | Perfectionnements aux dispositifs laser à semiconducteur | |
FR87873E (fr) | Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés | |
FR1502247A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1427391A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1522816A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1465105A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1498772A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1463247A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1547292A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1434071A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1544424A (fr) | Perfectionnements aux dispositifs à semiconducteurs encapsulés | |
FR1422168A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1530218A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1522732A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1536107A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1459688A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1497276A (fr) | Perfectionnements aux dispositifs laser à semiconducteur | |
FR1319150A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1492176A (fr) | Perfectionnements aux dispositifs semiconducteurs à effet de champ | |
FR1489946A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1488176A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1406942A (fr) | Semi-conducteur à effet de champ | |
FR1471889A (fr) | Perfectionnements aux dispositifs semiconducteurs |