FR1522816A - Perfectionnements aux dispositifs semiconducteurs - Google Patents

Perfectionnements aux dispositifs semiconducteurs

Info

Publication number
FR1522816A
FR1522816A FR106224A FR106224A FR1522816A FR 1522816 A FR1522816 A FR 1522816A FR 106224 A FR106224 A FR 106224A FR 106224 A FR106224 A FR 106224A FR 1522816 A FR1522816 A FR 1522816A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR106224A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1522816A publication Critical patent/FR1522816A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/931Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Contacts (AREA)
  • Resistance Heating (AREA)
  • Conductive Materials (AREA)
FR106224A 1966-05-13 1967-05-12 Perfectionnements aux dispositifs semiconducteurs Expired FR1522816A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54978766A 1966-05-13 1966-05-13
US60412566A 1966-12-23 1966-12-23

Publications (1)

Publication Number Publication Date
FR1522816A true FR1522816A (fr) 1968-04-26

Family

ID=27069229

Family Applications (1)

Application Number Title Priority Date Filing Date
FR106224A Expired FR1522816A (fr) 1966-05-13 1967-05-12 Perfectionnements aux dispositifs semiconducteurs

Country Status (3)

Country Link
US (1) US3510733A (fr)
FR (1) FR1522816A (fr)
GB (1) GB1134153A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738937A (en) * 1985-10-22 1988-04-19 Hughes Aircraft Company Method of making ohmic contact structure
US5061972A (en) * 1988-12-14 1991-10-29 Cree Research, Inc. Fast recovery high temperature rectifying diode formed in silicon carbide
US6388272B1 (en) * 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
EP1114465B1 (fr) 1998-09-02 2007-03-21 SiCED Electronics Development GmbH & Co KG Dispositif a semiconducteur a contact ohmique et procede pour etablir un contact ohmique avec un tel dispositif
DE19919905A1 (de) * 1999-04-30 2000-11-02 Siemens Ag Halbleitervorrichtung mit ohmscher Kontaktierung und Verfahren zur ohmschen Kontaktierung einer Halbleitervorrichtung
JP3425603B2 (ja) * 2000-01-28 2003-07-14 独立行政法人産業技術総合研究所 電界効果トランジスタの製造方法
US20150345046A1 (en) * 2012-12-27 2015-12-03 Showa Denko K.K. Film-forming device
WO2014103727A1 (fr) * 2012-12-27 2014-07-03 昭和電工株式会社 DISPOSITIF DE FORMATION DE FILM DE SiC ET PROCÉDÉ DE PRODUCTION DE FILM DE SiC

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073109B (de) * 1957-08-16 1960-01-14 General Electric Company Sehe nectady, N Y (V St A) Verfahren zur Her stellung nicht gleichrichtender ohmscher Metallkontakte an Siliziumkarbidkorpern
NL230857A (fr) * 1958-08-26
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process
US3436614A (en) * 1965-04-20 1969-04-01 Nippon Telegraph & Telephone Nonrectifying laminated ohmic contact for semiconductors consisting of chromium and 80% nickel

Also Published As

Publication number Publication date
GB1134153A (en) 1968-11-20
US3510733A (en) 1970-05-05

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