FR1516386A - Perfectionnements aux dispositifs à semiconducteurs - Google Patents

Perfectionnements aux dispositifs à semiconducteurs

Info

Publication number
FR1516386A
FR1516386A FR96949A FR96949A FR1516386A FR 1516386 A FR1516386 A FR 1516386A FR 96949 A FR96949 A FR 96949A FR 96949 A FR96949 A FR 96949A FR 1516386 A FR1516386 A FR 1516386A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR96949A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1516386A publication Critical patent/FR1516386A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
FR96949A 1966-03-01 1967-03-01 Perfectionnements aux dispositifs à semiconducteurs Expired FR1516386A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53081166A 1966-03-01 1966-03-01

Publications (1)

Publication Number Publication Date
FR1516386A true FR1516386A (fr) 1968-03-08

Family

ID=24115080

Family Applications (1)

Application Number Title Priority Date Filing Date
FR96949A Expired FR1516386A (fr) 1966-03-01 1967-03-01 Perfectionnements aux dispositifs à semiconducteurs

Country Status (5)

Country Link
US (1) US3597667A (fr)
CA (1) CA934883A (fr)
DE (1) DE1589810C3 (fr)
FR (1) FR1516386A (fr)
GB (1) GB1170682A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2011942A1 (fr) * 1968-06-14 1970-03-13 Philips Nv
DE1951787A1 (de) * 1968-10-14 1970-04-30 Sperry Rand Corp Speicherelement

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
DE1696625C3 (de) * 1966-10-07 1979-03-08 Syumpei, Yamazaki Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper
US4060827A (en) * 1967-02-03 1977-11-29 Hitachi, Ltd. Semiconductor device and a method of making the same
DE1614435B2 (de) * 1967-02-23 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen
FR2014382B1 (fr) * 1968-06-28 1974-03-15 Motorola Inc
US4009481A (en) * 1969-12-15 1977-02-22 Siemens Aktiengesellschaft Metal semiconductor diode
DE2020531C2 (de) * 1970-04-27 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren
US4794308A (en) * 1970-08-06 1988-12-27 Owens-Illinois Television Products Inc. Multiple gaseous discharge display/memory panel having improved operating life
US4731560A (en) * 1970-08-06 1988-03-15 Owens-Illinois Television Products, Inc. Multiple gaseous discharge display/memory panel having improved operating life
DE2057204C3 (de) * 1970-11-20 1975-02-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Metall-Halbleiterkontakten
US3694700A (en) * 1971-02-19 1972-09-26 Nasa Integrated circuit including field effect transistor and cerment resistor
US3707656A (en) * 1971-02-19 1972-12-26 Ibm Transistor comprising layers of silicon dioxide and silicon nitride
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate
FR2134290B1 (fr) * 1971-04-30 1977-03-18 Texas Instruments France
US4010290A (en) * 1971-09-22 1977-03-01 Motorola, Inc. Method of fabricating an ensulated gate field-effect device
US3760242A (en) * 1972-03-06 1973-09-18 Ibm Coated semiconductor structures and methods of forming protective coverings on such structures
US3844831A (en) * 1972-10-27 1974-10-29 Ibm Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
US3924024A (en) * 1973-04-02 1975-12-02 Ncr Co Process for fabricating MNOS non-volatile memories
JPS5245176Y2 (fr) * 1973-09-19 1977-10-14
US3933541A (en) * 1974-01-22 1976-01-20 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor planar device
US3959025A (en) * 1974-05-01 1976-05-25 Rca Corporation Method of making an insulated gate field effect transistor
US4015175A (en) * 1975-06-02 1977-03-29 Texas Instruments Incorporated Discrete, fixed-value capacitor
US4134125A (en) * 1977-07-20 1979-01-09 Bell Telephone Laboratories, Incorporated Passivation of metallized semiconductor substrates
JPS5810863B2 (ja) * 1978-04-24 1983-02-28 株式会社日立製作所 半導体装置
US4691219A (en) * 1980-07-08 1987-09-01 International Business Machines Corporation Self-aligned polysilicon base contact structure
US4758528A (en) * 1980-07-08 1988-07-19 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
DE3228399A1 (de) * 1982-07-29 1984-02-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten schaltung
JPS5975661A (ja) * 1982-10-22 1984-04-28 Fujitsu Ltd 半導体装置及びその製造方法
US4547959A (en) * 1983-02-22 1985-10-22 General Motors Corporation Uses for buried contacts in integrated circuits
US4575921A (en) * 1983-11-04 1986-03-18 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
US4528211A (en) * 1983-11-04 1985-07-09 General Motors Corporation Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
JPH01280368A (ja) * 1988-05-06 1989-11-10 Sharp Corp 化合物半導体発光素子
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
US5944906A (en) * 1996-05-24 1999-08-31 Micron Technology Inc Wet cleans for composite surfaces
US6420747B2 (en) * 1999-02-10 2002-07-16 International Business Machines Corporation MOSCAP design for improved reliability
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7411215B2 (en) 2002-04-15 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
KR100736678B1 (ko) * 2006-08-04 2007-07-06 주식회사 유니테스트 프로브 구조물 제조 방법
EP2087527A1 (fr) * 2006-12-01 2009-08-12 Sharp Kabushiki Kaisha Cellule solaire et son procede de fabrication
WO2019152293A1 (fr) 2018-01-30 2019-08-08 The Board Of Trustees Of The University Of Alabama Électrodes composites et procédés pour leur préparation et leur utilisation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250967A (en) * 1961-12-22 1966-05-10 Rca Corp Solid state triode
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3384829A (en) * 1963-02-08 1968-05-21 Nippon Electric Co Semiconductor variable capacitance element
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
US3391309A (en) * 1963-07-15 1968-07-02 Melpar Inc Solid state cathode
GB1060925A (en) * 1964-04-27 1967-03-08 Westinghouse Electric Corp Growth of insulating films such as for semiconductor devices
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
US3391023A (en) * 1965-03-29 1968-07-02 Fairchild Camera Instr Co Dielecteric isolation process
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2011942A1 (fr) * 1968-06-14 1970-03-13 Philips Nv
DE1951787A1 (de) * 1968-10-14 1970-04-30 Sperry Rand Corp Speicherelement

Also Published As

Publication number Publication date
CA934883A (en) 1973-10-02
DE1589810B2 (de) 1973-06-20
GB1170682A (en) 1969-11-12
DE1589810C3 (de) 1978-05-24
DE1589810A1 (de) 1970-06-04
US3597667A (en) 1971-08-03

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