FR1516386A - Perfectionnements aux dispositifs à semiconducteurs - Google Patents
Perfectionnements aux dispositifs à semiconducteursInfo
- Publication number
- FR1516386A FR1516386A FR96949A FR96949A FR1516386A FR 1516386 A FR1516386 A FR 1516386A FR 96949 A FR96949 A FR 96949A FR 96949 A FR96949 A FR 96949A FR 1516386 A FR1516386 A FR 1516386A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- device enhancements
- enhancements
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53081166A | 1966-03-01 | 1966-03-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1516386A true FR1516386A (fr) | 1968-03-08 |
Family
ID=24115080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR96949A Expired FR1516386A (fr) | 1966-03-01 | 1967-03-01 | Perfectionnements aux dispositifs à semiconducteurs |
Country Status (5)
Country | Link |
---|---|
US (1) | US3597667A (fr) |
CA (1) | CA934883A (fr) |
DE (1) | DE1589810C3 (fr) |
FR (1) | FR1516386A (fr) |
GB (1) | GB1170682A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2011942A1 (fr) * | 1968-06-14 | 1970-03-13 | Philips Nv | |
DE1951787A1 (de) * | 1968-10-14 | 1970-04-30 | Sperry Rand Corp | Speicherelement |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3979768A (en) * | 1966-03-23 | 1976-09-07 | Hitachi, Ltd. | Semiconductor element having surface coating comprising silicon nitride and silicon oxide films |
DE1696625C3 (de) * | 1966-10-07 | 1979-03-08 | Syumpei, Yamazaki | Verfahren zum Erzeugen einer Nitridschutzschicht auf einem Halbleiterkörper |
US4060827A (en) * | 1967-02-03 | 1977-11-29 | Hitachi, Ltd. | Semiconductor device and a method of making the same |
DE1614435B2 (de) * | 1967-02-23 | 1979-05-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen |
FR2014382B1 (fr) * | 1968-06-28 | 1974-03-15 | Motorola Inc | |
US4009481A (en) * | 1969-12-15 | 1977-02-22 | Siemens Aktiengesellschaft | Metal semiconductor diode |
DE2020531C2 (de) * | 1970-04-27 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren |
US4794308A (en) * | 1970-08-06 | 1988-12-27 | Owens-Illinois Television Products Inc. | Multiple gaseous discharge display/memory panel having improved operating life |
US4731560A (en) * | 1970-08-06 | 1988-03-15 | Owens-Illinois Television Products, Inc. | Multiple gaseous discharge display/memory panel having improved operating life |
DE2057204C3 (de) * | 1970-11-20 | 1975-02-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Metall-Halbleiterkontakten |
US3694700A (en) * | 1971-02-19 | 1972-09-26 | Nasa | Integrated circuit including field effect transistor and cerment resistor |
US3707656A (en) * | 1971-02-19 | 1972-12-26 | Ibm | Transistor comprising layers of silicon dioxide and silicon nitride |
US3856587A (en) * | 1971-03-26 | 1974-12-24 | Co Yamazaki Kogyo Kk | Method of fabricating semiconductor memory device gate |
FR2134290B1 (fr) * | 1971-04-30 | 1977-03-18 | Texas Instruments France | |
US4010290A (en) * | 1971-09-22 | 1977-03-01 | Motorola, Inc. | Method of fabricating an ensulated gate field-effect device |
US3760242A (en) * | 1972-03-06 | 1973-09-18 | Ibm | Coated semiconductor structures and methods of forming protective coverings on such structures |
US3844831A (en) * | 1972-10-27 | 1974-10-29 | Ibm | Forming a compact multilevel interconnection metallurgy system for semi-conductor devices |
US3924024A (en) * | 1973-04-02 | 1975-12-02 | Ncr Co | Process for fabricating MNOS non-volatile memories |
JPS5245176Y2 (fr) * | 1973-09-19 | 1977-10-14 | ||
US3933541A (en) * | 1974-01-22 | 1976-01-20 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor planar device |
US3959025A (en) * | 1974-05-01 | 1976-05-25 | Rca Corporation | Method of making an insulated gate field effect transistor |
US4015175A (en) * | 1975-06-02 | 1977-03-29 | Texas Instruments Incorporated | Discrete, fixed-value capacitor |
US4134125A (en) * | 1977-07-20 | 1979-01-09 | Bell Telephone Laboratories, Incorporated | Passivation of metallized semiconductor substrates |
JPS5810863B2 (ja) * | 1978-04-24 | 1983-02-28 | 株式会社日立製作所 | 半導体装置 |
US4691219A (en) * | 1980-07-08 | 1987-09-01 | International Business Machines Corporation | Self-aligned polysilicon base contact structure |
US4758528A (en) * | 1980-07-08 | 1988-07-19 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
DE3228399A1 (de) * | 1982-07-29 | 1984-02-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer monolithisch integrierten schaltung |
JPS5975661A (ja) * | 1982-10-22 | 1984-04-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US4547959A (en) * | 1983-02-22 | 1985-10-22 | General Motors Corporation | Uses for buried contacts in integrated circuits |
US4575921A (en) * | 1983-11-04 | 1986-03-18 | General Motors Corporation | Silicon nitride formation and use in self-aligned semiconductor device manufacturing method |
US4528211A (en) * | 1983-11-04 | 1985-07-09 | General Motors Corporation | Silicon nitride formation and use in self-aligned semiconductor device manufacturing method |
JPH01280368A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 化合物半導体発光素子 |
US5719065A (en) * | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
US5944906A (en) * | 1996-05-24 | 1999-08-31 | Micron Technology Inc | Wet cleans for composite surfaces |
US6420747B2 (en) * | 1999-02-10 | 2002-07-16 | International Business Machines Corporation | MOSCAP design for improved reliability |
US7038239B2 (en) | 2002-04-09 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
JP3989763B2 (ja) | 2002-04-15 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7411215B2 (en) | 2002-04-15 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the same |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
KR100736678B1 (ko) * | 2006-08-04 | 2007-07-06 | 주식회사 유니테스트 | 프로브 구조물 제조 방법 |
EP2087527A1 (fr) * | 2006-12-01 | 2009-08-12 | Sharp Kabushiki Kaisha | Cellule solaire et son procede de fabrication |
WO2019152293A1 (fr) | 2018-01-30 | 2019-08-08 | The Board Of Trustees Of The University Of Alabama | Électrodes composites et procédés pour leur préparation et leur utilisation |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3250967A (en) * | 1961-12-22 | 1966-05-10 | Rca Corp | Solid state triode |
US3165430A (en) * | 1963-01-21 | 1965-01-12 | Siliconix Inc | Method of ultra-fine semiconductor manufacture |
US3384829A (en) * | 1963-02-08 | 1968-05-21 | Nippon Electric Co | Semiconductor variable capacitance element |
US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
US3391309A (en) * | 1963-07-15 | 1968-07-02 | Melpar Inc | Solid state cathode |
GB1060925A (en) * | 1964-04-27 | 1967-03-08 | Westinghouse Electric Corp | Growth of insulating films such as for semiconductor devices |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3385729A (en) * | 1964-10-26 | 1968-05-28 | North American Rockwell | Composite dual dielectric for isolation in integrated circuits and method of making |
US3287243A (en) * | 1965-03-29 | 1966-11-22 | Bell Telephone Labor Inc | Deposition of insulating films by cathode sputtering in an rf-supported discharge |
US3391023A (en) * | 1965-03-29 | 1968-07-02 | Fairchild Camera Instr Co | Dielecteric isolation process |
US3442701A (en) * | 1965-05-19 | 1969-05-06 | Bell Telephone Labor Inc | Method of fabricating semiconductor contacts |
-
1966
- 1966-03-01 US US530811A patent/US3597667A/en not_active Expired - Lifetime
-
1967
- 1967-01-18 GB GB2767/67A patent/GB1170682A/en not_active Expired
- 1967-02-25 DE DE1589810A patent/DE1589810C3/de not_active Expired
- 1967-03-01 FR FR96949A patent/FR1516386A/fr not_active Expired
- 1967-03-18 CA CA985590A patent/CA934883A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2011942A1 (fr) * | 1968-06-14 | 1970-03-13 | Philips Nv | |
DE1951787A1 (de) * | 1968-10-14 | 1970-04-30 | Sperry Rand Corp | Speicherelement |
Also Published As
Publication number | Publication date |
---|---|
CA934883A (en) | 1973-10-02 |
DE1589810B2 (de) | 1973-06-20 |
GB1170682A (en) | 1969-11-12 |
DE1589810C3 (de) | 1978-05-24 |
DE1589810A1 (de) | 1970-06-04 |
US3597667A (en) | 1971-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1516386A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1538050A (fr) | Dispositifs à redresseurs semi-conducteurs | |
FR1507686A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1513146A (fr) | Perfectionnements aux dispositifs laser à semiconducteur | |
FR1502247A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1427391A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1522816A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1498772A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1465105A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1463247A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1547292A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1434071A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1530218A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1522732A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1536107A (fr) | Perfectionnements aux dispositifs à semiconducteur | |
FR1422168A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1488176A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1489946A (fr) | Perfectionnements aux dispositifs à semiconducteurs | |
FR1497276A (fr) | Perfectionnements aux dispositifs laser à semiconducteur | |
FR1459688A (fr) | Perfectionnements aux dispositifs à semi-conducteurs | |
FR1471889A (fr) | Perfectionnements aux dispositifs semiconducteurs | |
FR1496609A (fr) | Perfectionnements aux dispositifs semi-conducteurs | |
FR1544424A (fr) | Perfectionnements aux dispositifs à semiconducteurs encapsulés | |
FR1512055A (fr) | Appareil à semi-conducteur | |
FR1534831A (fr) | Perfectionnements aux dispositifs semiconducteurs |