CH414872A - Dispositif semi-conducteur à effet de champ à canaux multiples intégrés - Google Patents
Dispositif semi-conducteur à effet de champ à canaux multiples intégrésInfo
- Publication number
- CH414872A CH414872A CH970464A CH970464A CH414872A CH 414872 A CH414872 A CH 414872A CH 970464 A CH970464 A CH 970464A CH 970464 A CH970464 A CH 970464A CH 414872 A CH414872 A CH 414872A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- field effect
- channel field
- integrated multi
- effect semiconductor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR942896A FR1377330A (fr) | 1963-07-26 | 1963-07-26 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
| FR6722A FR87873E (fr) | 1963-07-26 | 1965-02-23 | Perfectionnements aux dispositifs semi-conducteurs à effet de champ à canaux multiples intégrés |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH414872A true CH414872A (fr) | 1966-06-15 |
Family
ID=26162207
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH970464A CH414872A (fr) | 1963-07-26 | 1964-07-24 | Dispositif semi-conducteur à effet de champ à canaux multiples intégrés |
| CH231666A CH429953A (fr) | 1963-07-26 | 1966-02-17 | Dispositif semiconducteur |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH231666A CH429953A (fr) | 1963-07-26 | 1966-02-17 | Dispositif semiconducteur |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US3372316A (fr) |
| CH (2) | CH414872A (fr) |
| DE (2) | DE1293900B (fr) |
| FR (2) | FR1377330A (fr) |
| GB (2) | GB1045314A (fr) |
| NL (2) | NL143734B (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1377330A (fr) * | 1963-07-26 | 1964-11-06 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés | |
| US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
| US3443172A (en) * | 1965-11-16 | 1969-05-06 | Monsanto Co | Low capacitance field effect transistor |
| CH568659A5 (fr) * | 1972-03-10 | 1975-10-31 | Teszner Stanislas | |
| JPS5017771A (fr) * | 1973-06-15 | 1975-02-25 | ||
| US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
| US4633281A (en) * | 1984-06-08 | 1986-12-30 | Eaton Corporation | Dual stack power JFET with buried field shaping depletion regions |
| EP0167810A1 (fr) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | JFET de puissance comportant plusieurs pincements latéraux |
| US4670764A (en) * | 1984-06-08 | 1987-06-02 | Eaton Corporation | Multi-channel power JFET with buried field shaping regions |
| US4959697A (en) * | 1988-07-20 | 1990-09-25 | Vtc Incorporated | Short channel junction field effect transistor |
| JP2713205B2 (ja) * | 1995-02-21 | 1998-02-16 | 日本電気株式会社 | 半導体装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
| GB912114A (en) * | 1960-09-26 | 1962-12-05 | Westinghouse Electric Corp | Semiconductor devices |
| FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
| FR1329626A (fr) * | 1962-04-04 | 1963-06-14 | Europ Des Semi Conducteurs Soc | Perfectionnements aux transistors à effet de champ, de hautes performances |
| US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
| FR1377330A (fr) * | 1963-07-26 | 1964-11-06 | Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés |
-
1963
- 1963-07-26 FR FR942896A patent/FR1377330A/fr not_active Expired
-
1964
- 1964-07-23 DE DET26654A patent/DE1293900B/de not_active Withdrawn
- 1964-07-23 NL NL646408428A patent/NL143734B/xx unknown
- 1964-07-24 CH CH970464A patent/CH414872A/fr unknown
- 1964-07-24 US US385023A patent/US3372316A/en not_active Expired - Lifetime
- 1964-08-04 GB GB30972/64A patent/GB1045314A/en not_active Expired
-
1965
- 1965-02-23 FR FR6722A patent/FR87873E/fr not_active Expired
-
1966
- 1966-02-17 CH CH231666A patent/CH429953A/fr unknown
- 1966-02-21 US US528896A patent/US3407342A/en not_active Expired - Lifetime
- 1966-02-22 GB GB7612/66A patent/GB1090696A/en not_active Expired
- 1966-02-23 DE DE1514932A patent/DE1514932C3/de not_active Expired
- 1966-02-23 NL NL666602337A patent/NL152119B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL152119B (nl) | 1977-01-17 |
| DE1514932B2 (de) | 1974-06-12 |
| DE1514932C3 (de) | 1975-01-30 |
| GB1090696A (en) | 1967-11-15 |
| NL143734B (nl) | 1974-10-15 |
| FR87873E (fr) | 1966-07-08 |
| NL6602337A (fr) | 1966-08-24 |
| US3372316A (en) | 1968-03-05 |
| NL6408428A (fr) | 1965-01-27 |
| CH429953A (fr) | 1967-02-15 |
| US3407342A (en) | 1968-10-22 |
| FR1377330A (fr) | 1964-11-06 |
| DE1514932A1 (de) | 1969-09-11 |
| DE1293900B (de) | 1969-04-30 |
| GB1045314A (en) | 1966-10-12 |
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