FR1381154A - Transistors à effet de champ - Google Patents

Transistors à effet de champ

Info

Publication number
FR1381154A
FR1381154A FR962475A FR962475A FR1381154A FR 1381154 A FR1381154 A FR 1381154A FR 962475 A FR962475 A FR 962475A FR 962475 A FR962475 A FR 962475A FR 1381154 A FR1381154 A FR 1381154A
Authority
FR
France
Prior art keywords
field effect
effect transistors
transistors
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR962475A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to FR962475A priority Critical patent/FR1381154A/fr
Application granted granted Critical
Publication of FR1381154A publication Critical patent/FR1381154A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
FR962475A 1963-02-04 1964-02-03 Transistors à effet de champ Expired FR1381154A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR962475A FR1381154A (fr) 1963-02-04 1964-02-03 Transistors à effet de champ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP447463 1963-02-04
FR962475A FR1381154A (fr) 1963-02-04 1964-02-03 Transistors à effet de champ

Publications (1)

Publication Number Publication Date
FR1381154A true FR1381154A (fr) 1964-12-04

Family

ID=26205695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR962475A Expired FR1381154A (fr) 1963-02-04 1964-02-03 Transistors à effet de champ

Country Status (1)

Country Link
FR (1) FR1381154A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1230919B (de) * 1965-07-17 1966-12-22 Telefunken Patent Verfahren zur sperrschichtfreien Kontaktierung von p-leitenden Zonen eines Halbleiterkoerpers mit einem Gold-Gallium-Lot

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1230919B (de) * 1965-07-17 1966-12-22 Telefunken Patent Verfahren zur sperrschichtfreien Kontaktierung von p-leitenden Zonen eines Halbleiterkoerpers mit einem Gold-Gallium-Lot

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