AT245626B - Feldeffekttransistor - Google Patents
FeldeffekttransistorInfo
- Publication number
- AT245626B AT245626B AT759363A AT759363A AT245626B AT 245626 B AT245626 B AT 245626B AT 759363 A AT759363 A AT 759363A AT 759363 A AT759363 A AT 759363A AT 245626 B AT245626 B AT 245626B
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US230449A US3283221A (en) | 1962-10-15 | 1962-10-15 | Field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT245626B true AT245626B (de) | 1966-03-10 |
Family
ID=22865266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT759363A AT245626B (de) | 1962-10-15 | 1963-09-20 | Feldeffekttransistor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3283221A (de) |
| AT (1) | AT245626B (de) |
| BE (1) | BE638316A (de) |
| CH (1) | CH441509A (de) |
| DE (1) | DE1283399B (de) |
| ES (1) | ES292458A1 (de) |
| GB (1) | GB1060731A (de) |
| NL (1) | NL299194A (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
| BE666834A (de) * | 1964-07-13 | |||
| US3375419A (en) * | 1965-02-25 | 1968-03-26 | Union Carbide Corp | Field effect transistor with poly-p-xylylene insulated gate structure and method |
| US3378737A (en) * | 1965-06-28 | 1968-04-16 | Teledyne Inc | Buried channel field effect transistor and method of forming |
| US3459944A (en) * | 1966-01-04 | 1969-08-05 | Ibm | Photosensitive insulated gate field effect transistor |
| US3458798A (en) * | 1966-09-15 | 1969-07-29 | Ibm | Solid state rectifying circuit arrangements |
| US3461323A (en) * | 1968-02-08 | 1969-08-12 | Bendix Corp | Negative resistance semiconductor device |
| US3593070A (en) * | 1968-12-17 | 1971-07-13 | Texas Instruments Inc | Submount for semiconductor assembly |
| US3591852A (en) * | 1969-01-21 | 1971-07-06 | Gen Electric | Nonvolatile field effect transistor counter |
| US3967305A (en) * | 1969-03-27 | 1976-06-29 | Mcdonnell Douglas Corporation | Multichannel junction field-effect transistor and process |
| JPS4915668B1 (de) * | 1969-04-15 | 1974-04-16 | ||
| US3648127A (en) * | 1970-09-28 | 1972-03-07 | Fairchild Camera Instr Co | Reach through or punch{13 through breakdown for gate protection in mos devices |
| US3914137A (en) * | 1971-10-06 | 1975-10-21 | Motorola Inc | Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition |
| US4021835A (en) * | 1974-01-25 | 1977-05-03 | Hitachi, Ltd. | Semiconductor device and a method for fabricating the same |
| US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
| US4000504A (en) * | 1975-05-12 | 1976-12-28 | Hewlett-Packard Company | Deep channel MOS transistor |
| US4132998A (en) * | 1977-08-29 | 1979-01-02 | Rca Corp. | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate |
| JPS6019152B2 (ja) * | 1977-08-31 | 1985-05-14 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 電界効果トランジスタ |
| US4166223A (en) * | 1978-02-06 | 1979-08-28 | Westinghouse Electric Corp. | Dual field effect transistor structure for compensating effects of threshold voltage |
| NL7904200A (nl) * | 1979-05-29 | 1980-12-02 | Philips Nv | Lagenveldeffecttransistor. |
| GB2140617B (en) * | 1980-03-03 | 1985-06-19 | Raytheon Co | Methods of forming a field effect transistor |
| US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
| JPS58188165A (ja) * | 1982-04-28 | 1983-11-02 | Nec Corp | 半導体装置 |
| US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
| JPS62128175A (ja) * | 1985-11-29 | 1987-06-10 | Hitachi Ltd | 半導体装置 |
| GB2233822A (en) * | 1989-07-12 | 1991-01-16 | Philips Electronic Associated | A thin film field effect transistor |
| KR20060078925A (ko) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 전류의 제어가 정반대인 금속 산화물 반도체 트랜지스터 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| FR1037293A (fr) * | 1951-05-19 | 1953-09-15 | Licentia Gmbh | Redresseur sec à contrôle électrique et son procédé de fabrication |
| US2756285A (en) * | 1951-08-24 | 1956-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2791759A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Semiconductive device |
| US2993998A (en) * | 1955-06-09 | 1961-07-25 | Sprague Electric Co | Transistor combinations |
| US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
| US2979427A (en) * | 1957-03-18 | 1961-04-11 | Shockley William | Semiconductor device and method of making the same |
| NL237225A (de) * | 1958-03-19 | |||
| NL245195A (de) * | 1958-12-11 | |||
| FR1293699A (fr) * | 1960-05-02 | 1962-05-18 | Westinghouse Electric Corp | Dispositif semi-conducteur |
| FR1306187A (fr) * | 1960-09-26 | 1962-10-13 | Westinghouse Electric Corp | Transistor unipolaire |
| NL293447A (de) * | 1962-05-31 |
-
0
- NL NL299194D patent/NL299194A/xx unknown
- BE BE638316D patent/BE638316A/xx unknown
-
1962
- 1962-10-15 US US230449A patent/US3283221A/en not_active Expired - Lifetime
-
1963
- 1963-08-29 CH CH1066163A patent/CH441509A/de unknown
- 1963-09-20 AT AT759363A patent/AT245626B/de active
- 1963-09-26 GB GB38032/63A patent/GB1060731A/en not_active Expired
- 1963-10-10 DE DER36306A patent/DE1283399B/de active Pending
- 1963-10-14 ES ES0292458A patent/ES292458A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ES292458A1 (es) | 1964-04-01 |
| GB1060731A (en) | 1967-03-08 |
| US3283221A (en) | 1966-11-01 |
| DE1283399B (de) | 1968-11-21 |
| CH441509A (de) | 1967-08-15 |
| BE638316A (de) | |
| NL299194A (de) |
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