ES292458A1 - Un dispositivo de semiconductor - Google Patents
Un dispositivo de semiconductorInfo
- Publication number
- ES292458A1 ES292458A1 ES0292458A ES292458A ES292458A1 ES 292458 A1 ES292458 A1 ES 292458A1 ES 0292458 A ES0292458 A ES 0292458A ES 292458 A ES292458 A ES 292458A ES 292458 A1 ES292458 A1 ES 292458A1
- Authority
- ES
- Spain
- Prior art keywords
- layer
- silicon
- channels
- aluminium
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 238000000151 deposition Methods 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 108091006146 Channels Proteins 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000005275 alloying Methods 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 150000001805 chlorine compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229920000620 organic polymer Polymers 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- -1 polyethylene terephthalate Polymers 0.000 abstract 1
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract 1
- 239000005020 polyethylene terephthalate Substances 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US230449A US3283221A (en) | 1962-10-15 | 1962-10-15 | Field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES292458A1 true ES292458A1 (es) | 1964-04-01 |
Family
ID=22865266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES0292458A Expired ES292458A1 (es) | 1962-10-15 | 1963-10-14 | Un dispositivo de semiconductor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3283221A (es) |
| AT (1) | AT245626B (es) |
| BE (1) | BE638316A (es) |
| CH (1) | CH441509A (es) |
| DE (1) | DE1283399B (es) |
| ES (1) | ES292458A1 (es) |
| GB (1) | GB1060731A (es) |
| NL (1) | NL299194A (es) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
| BE666834A (es) * | 1964-07-13 | |||
| US3375419A (en) * | 1965-02-25 | 1968-03-26 | Union Carbide Corp | Field effect transistor with poly-p-xylylene insulated gate structure and method |
| US3378737A (en) * | 1965-06-28 | 1968-04-16 | Teledyne Inc | Buried channel field effect transistor and method of forming |
| US3459944A (en) * | 1966-01-04 | 1969-08-05 | Ibm | Photosensitive insulated gate field effect transistor |
| US3458798A (en) * | 1966-09-15 | 1969-07-29 | Ibm | Solid state rectifying circuit arrangements |
| US3461323A (en) * | 1968-02-08 | 1969-08-12 | Bendix Corp | Negative resistance semiconductor device |
| US3593070A (en) * | 1968-12-17 | 1971-07-13 | Texas Instruments Inc | Submount for semiconductor assembly |
| US3591852A (en) * | 1969-01-21 | 1971-07-06 | Gen Electric | Nonvolatile field effect transistor counter |
| US3967305A (en) * | 1969-03-27 | 1976-06-29 | Mcdonnell Douglas Corporation | Multichannel junction field-effect transistor and process |
| JPS4915668B1 (es) * | 1969-04-15 | 1974-04-16 | ||
| US3648127A (en) * | 1970-09-28 | 1972-03-07 | Fairchild Camera Instr Co | Reach through or punch{13 through breakdown for gate protection in mos devices |
| US3914137A (en) * | 1971-10-06 | 1975-10-21 | Motorola Inc | Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition |
| US4021835A (en) * | 1974-01-25 | 1977-05-03 | Hitachi, Ltd. | Semiconductor device and a method for fabricating the same |
| US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
| US4000504A (en) * | 1975-05-12 | 1976-12-28 | Hewlett-Packard Company | Deep channel MOS transistor |
| US4132998A (en) * | 1977-08-29 | 1979-01-02 | Rca Corp. | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate |
| JPS6019152B2 (ja) * | 1977-08-31 | 1985-05-14 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 電界効果トランジスタ |
| US4166223A (en) * | 1978-02-06 | 1979-08-28 | Westinghouse Electric Corp. | Dual field effect transistor structure for compensating effects of threshold voltage |
| NL7904200A (nl) * | 1979-05-29 | 1980-12-02 | Philips Nv | Lagenveldeffecttransistor. |
| US4523368A (en) * | 1980-03-03 | 1985-06-18 | Raytheon Company | Semiconductor devices and manufacturing methods |
| GB2140617B (en) * | 1980-03-03 | 1985-06-19 | Raytheon Co | Methods of forming a field effect transistor |
| JPS58188165A (ja) * | 1982-04-28 | 1983-11-02 | Nec Corp | 半導体装置 |
| US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
| JPS62128175A (ja) * | 1985-11-29 | 1987-06-10 | Hitachi Ltd | 半導体装置 |
| GB2233822A (en) * | 1989-07-12 | 1991-01-16 | Philips Electronic Associated | A thin film field effect transistor |
| KR20060078925A (ko) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 전류의 제어가 정반대인 금속 산화물 반도체 트랜지스터 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| FR1037293A (fr) * | 1951-05-19 | 1953-09-15 | Licentia Gmbh | Redresseur sec à contrôle électrique et son procédé de fabrication |
| US2756285A (en) * | 1951-08-24 | 1956-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2791759A (en) * | 1955-02-18 | 1957-05-07 | Bell Telephone Labor Inc | Semiconductive device |
| US2993998A (en) * | 1955-06-09 | 1961-07-25 | Sprague Electric Co | Transistor combinations |
| US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
| US2979427A (en) * | 1957-03-18 | 1961-04-11 | Shockley William | Semiconductor device and method of making the same |
| NL237225A (es) * | 1958-03-19 | |||
| NL245195A (es) * | 1958-12-11 | |||
| FR1293699A (fr) * | 1960-05-02 | 1962-05-18 | Westinghouse Electric Corp | Dispositif semi-conducteur |
| FR1306187A (fr) * | 1960-09-26 | 1962-10-13 | Westinghouse Electric Corp | Transistor unipolaire |
| NL293447A (es) * | 1962-05-31 |
-
0
- BE BE638316D patent/BE638316A/xx unknown
- NL NL299194D patent/NL299194A/xx unknown
-
1962
- 1962-10-15 US US230449A patent/US3283221A/en not_active Expired - Lifetime
-
1963
- 1963-08-29 CH CH1066163A patent/CH441509A/de unknown
- 1963-09-20 AT AT759363A patent/AT245626B/de active
- 1963-09-26 GB GB38032/63A patent/GB1060731A/en not_active Expired
- 1963-10-10 DE DER36306A patent/DE1283399B/de active Pending
- 1963-10-14 ES ES0292458A patent/ES292458A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1283399B (de) | 1968-11-21 |
| GB1060731A (en) | 1967-03-08 |
| BE638316A (es) | |
| AT245626B (de) | 1966-03-10 |
| CH441509A (de) | 1967-08-15 |
| NL299194A (es) | |
| US3283221A (en) | 1966-11-01 |
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