FR1306187A - Transistor unipolaire - Google Patents

Transistor unipolaire

Info

Publication number
FR1306187A
FR1306187A FR874225A FR874225A FR1306187A FR 1306187 A FR1306187 A FR 1306187A FR 874225 A FR874225 A FR 874225A FR 874225 A FR874225 A FR 874225A FR 1306187 A FR1306187 A FR 1306187A
Authority
FR
France
Prior art keywords
unipolar transistor
unipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR874225A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR874225A priority Critical patent/FR1306187A/fr
Application granted granted Critical
Publication of FR1306187A publication Critical patent/FR1306187A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR874225A 1960-09-26 1961-09-26 Transistor unipolaire Expired FR1306187A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR874225A FR1306187A (fr) 1960-09-26 1961-09-26 Transistor unipolaire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5855660A 1960-09-26 1960-09-26
FR874225A FR1306187A (fr) 1960-09-26 1961-09-26 Transistor unipolaire

Publications (1)

Publication Number Publication Date
FR1306187A true FR1306187A (fr) 1962-10-13

Family

ID=26192437

Family Applications (1)

Application Number Title Priority Date Filing Date
FR874225A Expired FR1306187A (fr) 1960-09-26 1961-09-26 Transistor unipolaire

Country Status (1)

Country Link
FR (1) FR1306187A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283399B (de) * 1962-10-15 1968-11-21 Rca Corp Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
WO1988003328A1 (fr) * 1986-10-27 1988-05-05 Hughes Aircraft Company Transistor a canaux rayes et procede de formation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1283399B (de) * 1962-10-15 1968-11-21 Rca Corp Feldeffekt-Transistor mit zwei ohmschen Elektroden und mit einer isolierten Steuerelektrode
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
WO1988003328A1 (fr) * 1986-10-27 1988-05-05 Hughes Aircraft Company Transistor a canaux rayes et procede de formation

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