WO1988003328A1 - Transistor a canaux rayes et procede de formation - Google Patents

Transistor a canaux rayes et procede de formation Download PDF

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Publication number
WO1988003328A1
WO1988003328A1 PCT/US1987/002379 US8702379W WO8803328A1 WO 1988003328 A1 WO1988003328 A1 WO 1988003328A1 US 8702379 W US8702379 W US 8702379W WO 8803328 A1 WO8803328 A1 WO 8803328A1
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WO
WIPO (PCT)
Prior art keywords
substrate
channels
channel
fet
doping
Prior art date
Application number
PCT/US1987/002379
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English (en)
Inventor
David S. Matthews
David B. Rensch
Original Assignee
Hughes Aircraft Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Company filed Critical Hughes Aircraft Company
Publication of WO1988003328A1 publication Critical patent/WO1988003328A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate

Definitions

  • This invention relates to integrated circuit transistor structures, and more particularly to field effect transistors having a series of parallel channel stripes, and methods of forming the same.
  • FET field effective transistor
  • the channel is provided, as a series of isolated channel stripes, each of which is subject to separate depletion or enhancement in accordance with the FET's operational mode.
  • the aggregate surface area of the channels is collectively much greater than would be the case if a single channel covering an equivalent total area were used.
  • This type of device is described in an article by R. C. Clarke, "A High-Efficiency Castellated Gate Power FET", Proceedings of the IEEE, IEEE/Cornell Conference on High-Speed Semiconductor Devices and Circuits, Cat. No. 83CH1959-6, August 1983, pages 93-111.
  • FIG. 1 illustrates the basic structure of a typical castellated gate FET.
  • the device is formed using standard lithographic techniques and chemical etching.
  • a series of parallel channels 2 formed from a relatively heavily doped semiconductor material are provided on a substrate 4 of a much more lightly doped material.
  • a metal gate 8 is flowed over each of the insulators 6 and down between adjacent insulators and channels 2, coming into contact with the channels along their lateral sides. The object is to progressively constrict the channels from both lateral sides as well as from above as the gate voltage approaches a pinchoff level.
  • the channel widths and depths should both be on the order of 100-200 nm and have a periodic spacing of 1 to 2 times this dimension for the channels to be fully constricted at the pinchoff voltage.
  • the FET's transconductance remain substantially uniform over the device's operating range, including operating near pinchoff as well as at high current levels (transconductance is defined as the change in drain current forr at unit change in gate voltage at a given drain-source current).
  • the transconductance of the castellated gate device tends to vary as pinchoff is approached.
  • the surface is non-planar, which inhibits, the use of short gate lengths.
  • an object of the present invention is the provision of a novel and improved striped-channel transistor, and a method of forming the same, which has an improved construction over the prior art, can be readily fabricated, to very small dimensions and exhibits a substantially uniform transconductance over its operating range, including the area near pinchoff.
  • Another object is the provision of such a transistor which is capable of operating with relatively small voltages as a consequence of its small dimensions.
  • a plurality of channels extend through a semiconductive substrate between a drain and source, with the channels laterally separated from each other by the substrate material.
  • the channels are doped to a substantially greater level than the intervening substrate material.
  • the effective channel cross-sectional areas are controlled as a function of a gate voltage signal by means of a gate which extends across the channels and the intervening substrate material.
  • the FET may be implanted as either a depletion or an enhancement device.
  • the peak channel doping levels are in the approximate range of 1x10 17 - 6x10 18 cm -3 ; the corresponding doping levels are approximately 5x10 16 - 5x10 17 cm -3 for an enhancement device.
  • the substrate doping level is less than about 5x10 15 cm -3
  • the channels are formed by direct ion beam implantation into the desired channel tracks.
  • the substrate may also have the desired channel doping level prior to formation of the channels, in which case the channels are formed by directing an ion beam onto the substrate areas lateral to the desired channel locations to reduce the doping of those areas to the desired substrate doping level.
  • FIG. 1 is a fragmentary sectional view of the gate area in a prior art channel-striped transistor
  • FIG. 2 is a simplified sectional view showing the direct formation of channels by a focused ion beam in accordance with the present invention
  • FIG. 3 is a perspective view of an FET resulting from the channel formation illustrated in FIG. 2;
  • FIG. 4 is a sectional view of a single channel mapping the progressive constriction or expansion of the effective channel area in response to changes in the gate voltage;
  • FIG. 5 is a sectional view of a substrate with a doped layer which may serve as a base for the present invention
  • FIG. 6 is a sectional view illustrating the formation of striped channels in the substrate of FIG. 5;
  • FIG. 7 is a perspective view of an FET resulting from the channel formation shown in FIG. 6;
  • FIG. 8 is a graph of a set of drain I-V curves for incremental values of gate voltage, illustrating the substantially constant transconductance achieved by the present invention even in the pinchoff region.
  • GaAs gallium arsenide
  • FIG. 2 a substrate wafer of semiconductive material such as gallium arsenide (GaAs) 10 is shown as a base for the FET of the present invention.
  • GaAs gallium arsenide
  • other semiconductive materials such as silicon or indium phosphide could also be used.
  • a focused ion beam 12 is illustrated as being applied to a channel area 14 formed into the upper surface of the substrate.
  • Focused ion beam accelerators are well known, and are capable of focusing an ion beam to the small dimensions required by the present device. Silicon or other suitable materials can be used, to provide the dopant.
  • the device is illustrated as having ntype dopant, it should be understood that p-type dopant would also be suitable if accompanied by a reversal of the applied gate voltage polarity.
  • the ion beam is scanned over the substrate to form a series of straight, parallel channels 14.
  • the individual channel widths are preferably about 100-200 nm, with a periodic spacing of about 200-400 nm between successive channels.
  • the implant energy is set so that the channels are formed: to a depth: of about 100-200 nm.
  • the peak channel doping level is normally 2x10 17 cm - 3 , and preferably within the approximate range of 1x10 17 - 6x10 18 cm-
  • the substrate is nominally undoped, but in practice the substrate material will generally come with some amount of doping or will acquire a doping during processing. Although the present invention relies upon a substantial differential between the doping levels of the channels and the adjacent substrate, it will tolerate a substrate doping level up to about 5x10 15 cm -3 .
  • FIG. 3 A perspective view of the completed device is provided in FIG. 3.
  • a source 16 and drain 18 are formed at opposite ends of the channel stripes 14 with a doping level substantially greater than that of the channels.
  • a FET with a length of 50 microns in a direction transverse to the channels will accommodate approximately 80-160 channels.
  • the channel lengths only need to be equal to the gate length for self-aligned gate devices. Channel lengths can be longer for more self-aligned gate devices.
  • Suitable source and drain contacts, such as Au/Ge, are also provided but are not shown in FIG. 3.
  • a gate 20 is formed over the channel area between the source and drain, straddling both the channels and the intervening portions of the substrate.
  • a metal such as Ti/Pt/Au may be employed, in which case a Schottky junction is formed between the gate and the underlying semiconductive material.
  • a semiconductive material such as GaAs, silicon or indium phosphide could be employed for the gate, thus forming a p-n junction at the gate-channel interface. With indium phosphide, but not with GaAs, an oxide layer could be inserted between the gate and the underlying channels.
  • a silicon MOS structure could be implanted, as either a depletion, enhancement or inversion device. A. p-n junction will, generally work as well as a Schottky junction, but is more difficult to fabricate.
  • FIG. 4 a cross-section of an individuai channel stripe is shown to illustrate the effect of a varying gate voltage upon the effective channel area.
  • the channel doping level is 2x10 17 cm- 3 for a depletion device and 1x10 17 cm -3 for an enhancement device, while the doping level of substrate 10 is 1x10 14 cm -3 for both cases.
  • the channel width and depth are each about 120 nm.
  • the application of an increasing negative gate voltage will produce a depletion layer in the substrate and channel that progressively constricts the effective channel area.
  • the depletion regions for various gate voltages are indicated in FIG. 4 by the topographical-type lines. With zero gate voltage the depletion region extends only slightly down into the channel, but much more deeply into the surrounding substrate; this is a direct rfesult of the much heavier channel doping relative to the substrate.
  • a depletion region is formed with a zero gate voltage because the Schottky junction formed between the metallic gate and semiconductive substrate produces an inherent voltage differential across the junction of about -.75 volts.
  • a p-n junction would also produce an inherent voltage differential, the magnitude of which would depend upon the bandgap of the semiconductive material employed; the voltage for GaAs is about -.75 volts. If an oxide layer is disposed over the substrate with a metallic gate contact, the metal-oxide interface will also produce an inherent voltage differential. Gate junctions could also be devised that do not have inherent voltage differentials. In any case, the applied gate signal can simply be adjusted to compensate for any voltage differential associated with the gate junction to yield the same FET depletion action.
  • the depletion region in both the channel and in the substrate adjacent the channel also increase.
  • the substrate depletion region extends into the sides and bottom of the channel, such that the channel is effectively surrounded by a depletion region. This gives the gate a much greater control over the charge in the channel than is available in prior devices, and produces a higher and more uniform device transconductance.
  • the gate voltage continues to increase, the channel is eventually constricted to pinchoff.
  • the response of an enhancement type device to gate voltage is similar to that of a depletion type device.
  • the channel ion implant dose and the depth of implant are controlled so that the channel of an enhancement device is preferably pinched off, due to the inherent Schottky junction voltage differential, with a zero gate voltage.
  • the effective channel area then expands as the gate voltage is increased and made more positive; the rate of expansion per unit change in gate voltage is greater than for a depletion type device because of the lower channel doping level in the enhancement device.
  • the source and drain are then formed with a heavy implant from the focused ion beam (or conventioned implanter), followed by the formation of channel stripes between the source and drain with a lighter doping from the focused ion beam.
  • the wafer is then capped with silicon oxide, silicon nitride or other suitable material, and annealed. Resist is opened over the source and drain by ultraviolet exposure and developer, and ohmic contacts are formed on the source and drain by opticai lithography methods. the resist and overriding metal are then lifted off.
  • a resist can be laid down over the device and then removed from the channel area to enable etching of the channels to adjust the channel resistance and pinchoff voltage.
  • a gate contact is deposited using optical or other appropriate lithography techniques, followed by lifting off the resist or by metal etching methods.
  • the wafer is coated with a resist and channel stripes exposedin the resist with an ion beam, electron beam or possibly optical lithography techniques.
  • the resist is then developed, opening the stripe regions.
  • the wafer is next flooded with ions to implant the channels in the areas where the resist has been removed, followed by stripping the remaining resist from the wafer.
  • Several self-aligning processes are also available to form the FEt.
  • the focused ion beam is used to implant the channel stripes (but not the source and drain at this time).
  • the gate metal is then deposited over the device, and a gate pattern defined using either optical or other lithography methods (e.g., electron beam).
  • the gates are defined in the metal using appropriate pattern transfer methods.
  • the source and drain are implanted with the focused ion beam or with a conventional implanter to much heavier doping levels than the channels; the shadow of the gate mask defined the ends of the channels and their interface with the source and drain.
  • the device is then capped (if GaAs is used) and annealed, followed by the deposit of source and drain ohmic contacts.
  • the invention is also adaptable to molecular beam epitaxy or vapor phase epitaxy substrates, such as the substrate 22 illustrated in FIG. 5.
  • These structures have a nominally undoped or lightly doped base layer 24, with a much narrower medium doped layer 26 on top of the base layer and a heavily doped layer 28 on top of the medium doped layer. They can be formed with the doping level of the medium doped layer corresponding to the desired channel doping level, and the doping level of the heavily doped layer 28 corresponding to the desired source and drain doping levels.
  • the heavily doped layer 28 is first removed from over the channel region.
  • a focused ion beam 30 is then used to implant ions of opposite polarity to the substrate doping in the intervening portions 32 of the substrate lateral to the intended channel locations 34.
  • the ion implantation thus reduces the doping level of the substrate between the channels, and is controlled so that the intervening substrate doping level is reduced to below about 5x10 15 cm -3 .
  • B + ions can be implanted, for example, to reduce the intervening substrate doping level.
  • the channels can be ffctrmed by coating the substrate with a resist, opening the resist between the channels, and ion flooding the partially coated substrate to the desired doping level between the channels.
  • a complete device 36 formed in this fashion is shown in FIG. 7.
  • the heavily doped layer on either side of the channels 34 forms the source 38 and drain 40.
  • a gate 42 extends laterally over the channels between the source and drain.
  • the drain I/V curves for various values of gate voltage are present in FIG. 8 for a depletion device formed in accordance with the invention.
  • the regular vertical spacing between the curves for equal increments of gate voltage, down to the pinchoff region, demonstrates the very high, degree of transconductance uniformity achieved.
  • results show that the value of g m is relatively constant with decreasing drain current down to currents near pinchoff. This means that at the lower drain currents the device has a transconductance that is about 70% more than that obtained with a uniformly doped channel.
  • Results were also obtained for devices using the same mask set and similar starting material, but for which the gate and channel lengths were optical Self Aligned Gates (SAG). In these devices the SAG gates were about 1 micron in length with about 0.1 micron undercut. The current- voltage characteristic for these devices indicate higher output conductance, by a factor of two or more, compared with conventionally made MESFETs (on the same wafer), and a transconductance of 240 mS/mm.
  • SAG optical Self Aligned Gates
  • the transconductance in the stripes would be about 2 to 5 times this amount.
  • Measurements of the gatesource capacitance indicate a gain bandwidth product, f T , in the range of 12 to 15 GHz, or 15 - 20% higher than conventional MESFETs of the same dimensions.

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

Un transistor à effet de champ (FET) à canaux rayés (36) présente une pluralité de canaux de porte (34) s'étendant au travers d'un substrat semiconducteur (22) entre une source (38) et un drain (40). Les canaux (34) sont séparés latéralement entre eux par le matériau du substrat (22), et sont dopés à un niveau sensiblement supérieur que celui du matériau du substrat (22) intermédiaire. Une porte (42) s'étend en travers des canaux (34) et du matériau du substrat (22) intermédiaire pour commander les zones de sections transversales des canaux en fonction de la tension de la porte. Les canaux sont formés de manière précise par implantation de faisceaux d'ions (30). Les canaux (34) sont entourés par une région d'appauvrissement au fur et à mesure qu'ils s'approchent de l'arrachement par pincement, donnant ainsi à la porte (42) un plus grand contrôle sur la conductivité des canaux et d'une transconductance supérieure et plus uniforme au dispositif. L'invention peut s'appliquer à des transistors à effet de champ du type à appauvrissement et du type à enrichissement, et ils peuvent être fabriqués en utilisant une variété de procédés.
PCT/US1987/002379 1986-10-27 1987-09-21 Transistor a canaux rayes et procede de formation WO1988003328A1 (fr)

Applications Claiming Priority (2)

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US92355286A 1986-10-27 1986-10-27
US923,552 1986-10-27

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JP (1) JPH01501272A (fr)
IL (1) IL84076A0 (fr)
WO (1) WO1988003328A1 (fr)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0538792A2 (fr) * 1991-10-21 1993-04-28 Rohm Co., Ltd. FET multicanal à lignes étroites ayant une caractéristique de bruit améliore
EP0642174A1 (fr) * 1993-08-03 1995-03-08 Sumitomo Electric Industries, Ltd. MESFET avec résistance chimique faible
GB2316227A (en) * 1996-08-13 1998-02-18 Semiconductor Energy Lab Striped channel IGFET
US5952699A (en) * 1996-08-23 1999-09-14 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US6107654A (en) * 1998-02-09 2000-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6111296A (en) * 1996-08-13 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. MOSFET with plural channels for punch through and threshold voltage control
US6118148A (en) * 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6127702A (en) * 1996-09-18 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an SOI structure and manufacturing method therefor
US6184556B1 (en) 1997-07-04 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6198141B1 (en) 1996-08-13 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US6218714B1 (en) 1996-08-13 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US6232642B1 (en) 1997-06-26 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having impurity region locally at an end of channel formation region
GB2355586B (en) * 1996-01-22 2001-05-30 Fuji Electric Co Ltd Semiconductor device
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6693299B1 (en) 1997-07-14 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6703671B1 (en) 1996-08-23 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US7306981B2 (en) 2001-11-16 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor manufacturing method
US7535053B2 (en) 1997-11-18 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1306187A (fr) * 1960-09-26 1962-10-13 Westinghouse Electric Corp Transistor unipolaire
EP0011879B1 (fr) * 1978-12-05 1982-12-29 Siemens Aktiengesellschaft Transistor à effet de champ
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1306187A (fr) * 1960-09-26 1962-10-13 Westinghouse Electric Corp Transistor unipolaire
EP0011879B1 (fr) * 1978-12-05 1982-12-29 Siemens Aktiengesellschaft Transistor à effet de champ
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0538792A2 (fr) * 1991-10-21 1993-04-28 Rohm Co., Ltd. FET multicanal à lignes étroites ayant une caractéristique de bruit améliore
EP0538792A3 (en) * 1991-10-21 1993-06-02 Rohm Co., Ltd. Multiple narrow-line-channel fet having improved noise characteristics
US5726467A (en) * 1991-10-21 1998-03-10 Rohm Co., Ltd. Multiple narrow-line-channel fet having improved noise characteristics
EP0642174A1 (fr) * 1993-08-03 1995-03-08 Sumitomo Electric Industries, Ltd. MESFET avec résistance chimique faible
GB2355586B (en) * 1996-01-22 2001-05-30 Fuji Electric Co Ltd Semiconductor device
US6111296A (en) * 1996-08-13 2000-08-29 Semiconductor Energy Laboratory Co., Ltd. MOSFET with plural channels for punch through and threshold voltage control
GB2316227A (en) * 1996-08-13 1998-02-18 Semiconductor Energy Lab Striped channel IGFET
US6867085B2 (en) 1996-08-13 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US6653687B1 (en) 1996-08-13 2003-11-25 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device
US6617647B2 (en) 1996-08-13 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
GB2316227B (en) * 1996-08-13 2001-11-21 Semiconductor Energy Lab Insulated gate semiconductor device and method of manufacturing the same
US6198141B1 (en) 1996-08-13 2001-03-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US6218714B1 (en) 1996-08-13 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US6703671B1 (en) 1996-08-23 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US5952699A (en) * 1996-08-23 1999-09-14 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
US7339235B1 (en) 1996-09-18 2008-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SOI structure and manufacturing method thereof
US6127702A (en) * 1996-09-18 2000-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an SOI structure and manufacturing method therefor
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6690075B2 (en) 1996-11-04 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with channel having plural impurity regions
US6251733B1 (en) 1996-11-04 2001-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6118148A (en) * 1996-11-04 2000-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6232642B1 (en) 1997-06-26 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having impurity region locally at an end of channel formation region
US6583474B2 (en) 1997-07-04 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6420759B2 (en) 1997-07-04 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6184556B1 (en) 1997-07-04 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6693299B1 (en) 1997-07-14 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
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JPH01501272A (ja) 1989-04-27
IL84076A0 (en) 1988-03-31
EP0287658A1 (fr) 1988-10-26

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