FR1396830A - Transistor unipolaire - Google Patents

Transistor unipolaire

Info

Publication number
FR1396830A
FR1396830A FR976271A FR976271A FR1396830A FR 1396830 A FR1396830 A FR 1396830A FR 976271 A FR976271 A FR 976271A FR 976271 A FR976271 A FR 976271A FR 1396830 A FR1396830 A FR 1396830A
Authority
FR
France
Prior art keywords
unipolar transistor
unipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR976271A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1396830A publication Critical patent/FR1396830A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
FR976271A 1963-05-29 1964-05-28 Transistor unipolaire Expired FR1396830A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US284119A US3254280A (en) 1963-05-29 1963-05-29 Silicon carbide unipolar transistor

Publications (1)

Publication Number Publication Date
FR1396830A true FR1396830A (fr) 1965-04-23

Family

ID=23088921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR976271A Expired FR1396830A (fr) 1963-05-29 1964-05-28 Transistor unipolaire

Country Status (3)

Country Link
US (1) US3254280A (fr)
FR (1) FR1396830A (fr)
GB (1) GB1017355A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998019342A1 (fr) * 1996-10-29 1998-05-07 Daimler-Benz Aktiengesellschaft Structure a semi-conducteur pilotable a proprietes de commutation ameliorees

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508015A (en) * 1966-06-09 1970-04-21 Nat Res Corp Electroluminescent diode and sound recording system
NL6703014A (fr) * 1967-02-25 1968-08-26
US3453507A (en) * 1967-04-04 1969-07-01 Honeywell Inc Photo-detector
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4875083A (en) * 1987-10-26 1989-10-17 North Carolina State University Metal-insulator-semiconductor capacitor formed on silicon carbide
CA1313571C (fr) * 1987-10-26 1993-02-09 John W. Palmour Transistor mos a effet de champ en carbure de silicium
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
DE19839969C2 (de) 1998-09-02 2003-02-27 Infineon Technologies Ag Siliziumcarbid-Junction-Feldeffekttransistor
DE102011016900A1 (de) 2011-04-13 2012-10-18 Friedrich-Alexander-Universität Erlangen-Nürnberg Halbleiterbauelement

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2656496A (en) * 1951-07-31 1953-10-20 Bell Telephone Labor Inc Semiconductor translating device
US2954307A (en) * 1957-03-18 1960-09-27 Shockley William Grain boundary semiconductor device and method
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern
NL108185C (fr) * 1958-08-27
US3054034A (en) * 1958-10-01 1962-09-11 Rca Corp Semiconductor devices and method of manufacture thereof
US3078219A (en) * 1958-11-03 1963-02-19 Westinghouse Electric Corp Surface treatment of silicon carbide
US3152294A (en) * 1959-01-27 1964-10-06 Siemens Ag Unipolar diffusion transistor
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier
US3126505A (en) * 1959-11-18 1964-03-24 Field effect transistor having grain boundary therein
GB921947A (en) * 1960-05-02 1963-03-27 Westinghouse Electric Corp Semiconductor device
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
NL269345A (fr) * 1960-09-19
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998019342A1 (fr) * 1996-10-29 1998-05-07 Daimler-Benz Aktiengesellschaft Structure a semi-conducteur pilotable a proprietes de commutation ameliorees

Also Published As

Publication number Publication date
GB1017355A (en) 1966-01-19
US3254280A (en) 1966-05-31

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