GB921947A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB921947A GB921947A GB1503161A GB1503161A GB921947A GB 921947 A GB921947 A GB 921947A GB 1503161 A GB1503161 A GB 1503161A GB 1503161 A GB1503161 A GB 1503161A GB 921947 A GB921947 A GB 921947A
- Authority
- GB
- United Kingdom
- Prior art keywords
- groove
- die
- source
- semi
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
921,947. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. April 26, 1961 [May 2, 1960], No. 15031/61. Class 37. A field effect transistor has the gate electrode in the form of a strip of material disposed at the bottom of a groove in the semi-conductor wafer. An N-type silicon semi-conductor die before the formation of the gate electrodes is shown in Fig. 2, the dimensions of the cuboid containing it being 50 X 120 x 25 mils. A groove 20 is etched into the die to a depth of 1 mil. and a width of 5 mil. In addition end 18 is etched to a taper. A number of these prepared discs are inserted in a groove 38 in a graphite boat 30. A stainless steel lid 40 with a narrow groove 42 is placed in the boat and aluminium is vaporized so as to deposit the gate electrode 22 (Fig. 3) and then the gate electrode 24 on the lower face of the die. After vapour deposition of the two electrodes they are alloyed into the silicon die in a resistance furnace flushed with hydrogen, helium or argon. A temperature of 950‹ C. for a quarter to two hours is suggested. The tapered end of the device causes the two regions to join so that a single electrode only is necessary for the gate connection. Ohmic contacts are fused to the upper surfaces of the die to connect the source and drain electrodes. These may be N-type material, for example antimony, arsenic or phosphorous or an alloy of gold and an N- type doping material. Fig. 12 shows a device 100 mounted on a metallic base disc 202 for example steel, aluminium or copper on a stud 204. The transistor is soldered with its source and drain electrodes downwards to the metallized surface of a ceramic disc 206. A central groove in the metallized surface prevents shortcircuiting of the source to the drain. A single gate connection 208 only is necessary and this with the source and drain connections 210, 212 are lead to contact posts which pass through glass-to-metal seals 220. Resinous coatings may be applied to the device and a cap brazed, welded or soldered in position to provide an hermetically sealed enclosure. Fig. 13 shows a circular device one of the gate electrodes being at the bottom of a groove 322 between annular source and drain electrodes 360, 362. The whole of the bottom face of the device is a further gate electrode 324. The Specification refers to the use of other semi-conductors in silicon, namely germanium, silicon carbide and Group III-V compounds. The use of boron in indium is also referred to for doping.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2600660A | 1960-05-02 | 1960-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB921947A true GB921947A (en) | 1963-03-27 |
Family
ID=21829305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1503161A Expired GB921947A (en) | 1960-05-02 | 1961-04-26 | Semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1209213B (en) |
| GB (1) | GB921947A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
| US3328601A (en) * | 1964-04-06 | 1967-06-27 | Northern Electric Co | Distributed field effect devices |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| NL83838C (en) * | 1952-12-01 | 1957-01-15 | ||
| US2805347A (en) * | 1954-05-27 | 1957-09-03 | Bell Telephone Labor Inc | Semiconductive devices |
| FR69676E (en) * | 1955-10-06 | 1958-11-18 | Improvements to some magnetic toys | |
| GB856430A (en) * | 1956-12-13 | 1960-12-14 | Mullard Ltd | Improvements in and relating to semi-conductive devices |
| GB820252A (en) * | 1957-10-04 | 1959-09-16 | Standard Telephones Cables Ltd | Semiconductor device |
| FR1202426A (en) * | 1958-07-16 | 1960-01-11 | Csf | Improvements to field-effect transistors |
| FR1210880A (en) * | 1958-08-29 | 1960-03-11 | Improvements to field-effect transistors |
-
1961
- 1961-04-26 GB GB1503161A patent/GB921947A/en not_active Expired
- 1961-04-28 DE DEW29896A patent/DE1209213B/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
| US3328601A (en) * | 1964-04-06 | 1967-06-27 | Northern Electric Co | Distributed field effect devices |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1209213B (en) | 1966-01-20 |
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