CA1313571C - Transistor mos a effet de champ en carbure de silicium - Google Patents
Transistor mos a effet de champ en carbure de siliciumInfo
- Publication number
- CA1313571C CA1313571C CA000581146A CA581146A CA1313571C CA 1313571 C CA1313571 C CA 1313571C CA 000581146 A CA000581146 A CA 000581146A CA 581146 A CA581146 A CA 581146A CA 1313571 C CA1313571 C CA 1313571C
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- drain
- doped
- source
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 104
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 230000005669 field effect Effects 0.000 title claims abstract description 35
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 4
- 150000004706 metal oxides Chemical class 0.000 title abstract description 4
- 239000002019 doping agent Substances 0.000 claims abstract description 15
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims description 26
- 239000002344 surface layer Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 240000001492 Carallia brachiata Species 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 238000001835 Lely method Methods 0.000 description 1
- 229910017974 NH40H Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11356487A | 1987-10-26 | 1987-10-26 | |
| US113,564 | 1987-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1313571C true CA1313571C (fr) | 1993-02-09 |
Family
ID=22350162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000581146A Expired - Lifetime CA1313571C (fr) | 1987-10-26 | 1988-10-25 | Transistor mos a effet de champ en carbure de silicium |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0386085A4 (fr) |
| JP (1) | JP2644028B2 (fr) |
| KR (1) | KR0137966B1 (fr) |
| CA (1) | CA1313571C (fr) |
| WO (1) | WO1989004056A1 (fr) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5465249A (en) * | 1991-11-26 | 1995-11-07 | Cree Research, Inc. | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate |
| US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
| JP3146694B2 (ja) * | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法 |
| US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
| US5448081A (en) * | 1993-02-22 | 1995-09-05 | Texas Instruments Incorporated | Lateral power MOSFET structure using silicon carbide |
| FR2707425A1 (fr) * | 1993-07-09 | 1995-01-13 | Thomson Csf | Structure en matériau semiconducteur, application à la réalisation d'un transistor et procédé de réalisation. |
| US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
| US5385855A (en) * | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
| US5719409A (en) * | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
| DE19712561C1 (de) * | 1997-03-25 | 1998-04-30 | Siemens Ag | SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit |
| US5969378A (en) * | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
| US6121633A (en) * | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
| JP5098295B2 (ja) | 2006-10-30 | 2012-12-12 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1073110B (de) * | 1957-08-16 | 1960-01-14 | General Electric Company, Schenectady, N Y (V St A) | Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern |
| US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
| US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
| US3662458A (en) * | 1969-06-20 | 1972-05-16 | Westinghouse Electric Corp | Electrical contact for silicon carbide members |
| US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
| US3975648A (en) * | 1975-06-16 | 1976-08-17 | Hewlett-Packard Company | Flat-band voltage reference |
| US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
| US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
| JPS567479A (en) * | 1979-06-29 | 1981-01-26 | Toshiba Corp | Field-effect type semiconductor device |
| DE3208638A1 (de) * | 1982-03-10 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Lumineszenzdiode aus siliziumkarbid |
| US4762806A (en) * | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
| JP2615390B2 (ja) * | 1985-10-07 | 1997-05-28 | 工業技術院長 | 炭化シリコン電界効果トランジスタの製造方法 |
| JPS62136077A (ja) * | 1985-12-10 | 1987-06-19 | Nec Corp | 半導体装置 |
-
1988
- 1988-10-25 CA CA000581146A patent/CA1313571C/fr not_active Expired - Lifetime
- 1988-10-26 JP JP63509172A patent/JP2644028B2/ja not_active Expired - Lifetime
- 1988-10-26 WO PCT/US1988/003793 patent/WO1989004056A1/fr not_active Application Discontinuation
- 1988-10-26 EP EP19880909938 patent/EP0386085A4/en not_active Withdrawn
-
1989
- 1989-06-26 KR KR89701157A patent/KR0137966B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1989004056A1 (fr) | 1989-05-05 |
| KR890702245A (ko) | 1989-12-23 |
| EP0386085A4 (en) | 1990-11-28 |
| KR0137966B1 (en) | 1998-06-01 |
| EP0386085A1 (fr) | 1990-09-12 |
| JP2644028B2 (ja) | 1997-08-25 |
| JPH03501670A (ja) | 1991-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |