KR0137966B1 - Mosfet in silicon carbide - Google Patents
Mosfet in silicon carbideInfo
- Publication number
- KR0137966B1 KR0137966B1 KR89701157A KR890701157A KR0137966B1 KR 0137966 B1 KR0137966 B1 KR 0137966B1 KR 89701157 A KR89701157 A KR 89701157A KR 890701157 A KR890701157 A KR 890701157A KR 0137966 B1 KR0137966 B1 KR 0137966B1
- Authority
- KR
- South Korea
- Prior art keywords
- mosfet
- silicon carbide
- carbide
- silicon
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11356487A | 1987-10-26 | 1987-10-26 | |
US113,564 | 1987-10-26 | ||
PCT/US1988/003793 WO1989004056A1 (en) | 1987-10-26 | 1988-10-26 | Mosfet in silicon carbide |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890702245A KR890702245A (en) | 1989-12-23 |
KR0137966B1 true KR0137966B1 (en) | 1998-06-01 |
Family
ID=22350162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR89701157A KR0137966B1 (en) | 1987-10-26 | 1989-06-26 | Mosfet in silicon carbide |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0386085A4 (en) |
JP (1) | JP2644028B2 (en) |
KR (1) | KR0137966B1 (en) |
CA (1) | CA1313571C (en) |
WO (1) | WO1989004056A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100986807B1 (en) | 2006-10-30 | 2010-10-08 | 가부시키가이샤 덴소 | Method of manufacturing silicon carbide semiconductor device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465249A (en) * | 1991-11-26 | 1995-11-07 | Cree Research, Inc. | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate |
US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
JP3146694B2 (en) * | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | Silicon carbide MOSFET and method of manufacturing silicon carbide MOSFET |
US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
US5448081A (en) * | 1993-02-22 | 1995-09-05 | Texas Instruments Incorporated | Lateral power MOSFET structure using silicon carbide |
FR2707425A1 (en) * | 1993-07-09 | 1995-01-13 | Thomson Csf | Structure of semiconductor material, application to the production of a transistor and method of production |
US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
US5385855A (en) * | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
US5719409A (en) * | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
DE19712561C1 (en) * | 1997-03-25 | 1998-04-30 | Siemens Ag | Silicon carbide semiconductor device e.g. lateral or vertical MOSFET |
US6121633A (en) * | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
US5969378A (en) * | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1073110B (en) * | 1957-08-16 | 1960-01-14 | General Electric Company, Schenectady, N Y (V St A) | Process for the production of rectifying or ohmic connection contacts on silicon carbide bodies |
US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
US3662458A (en) * | 1969-06-20 | 1972-05-16 | Westinghouse Electric Corp | Electrical contact for silicon carbide members |
US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
US3975648A (en) * | 1975-06-16 | 1976-08-17 | Hewlett-Packard Company | Flat-band voltage reference |
US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
JPS567479A (en) * | 1979-06-29 | 1981-01-26 | Toshiba Corp | Field-effect type semiconductor device |
DE3208638A1 (en) * | 1982-03-10 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | SILICON CARBIDE LUMINESCENCE DIODE |
US4762806A (en) * | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
JP2615390B2 (en) * | 1985-10-07 | 1997-05-28 | 工業技術院長 | Method of manufacturing silicon carbide field effect transistor |
JPS62136077A (en) * | 1985-12-10 | 1987-06-19 | Nec Corp | Semiconductor device |
-
1988
- 1988-10-25 CA CA000581146A patent/CA1313571C/en not_active Expired - Lifetime
- 1988-10-26 JP JP63509172A patent/JP2644028B2/en not_active Expired - Lifetime
- 1988-10-26 WO PCT/US1988/003793 patent/WO1989004056A1/en not_active Application Discontinuation
- 1988-10-26 EP EP19880909938 patent/EP0386085A4/en not_active Withdrawn
-
1989
- 1989-06-26 KR KR89701157A patent/KR0137966B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100986807B1 (en) | 2006-10-30 | 2010-10-08 | 가부시키가이샤 덴소 | Method of manufacturing silicon carbide semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CA1313571C (en) | 1993-02-09 |
JP2644028B2 (en) | 1997-08-25 |
JPH03501670A (en) | 1991-04-11 |
KR890702245A (en) | 1989-12-23 |
EP0386085A4 (en) | 1990-11-28 |
EP0386085A1 (en) | 1990-09-12 |
WO1989004056A1 (en) | 1989-05-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120202 Year of fee payment: 15 |
|
EXPY | Expiration of term |