EP0386085A4 - Mosfet in silicon carbide - Google Patents

Mosfet in silicon carbide

Info

Publication number
EP0386085A4
EP0386085A4 EP19880909938 EP88909938A EP0386085A4 EP 0386085 A4 EP0386085 A4 EP 0386085A4 EP 19880909938 EP19880909938 EP 19880909938 EP 88909938 A EP88909938 A EP 88909938A EP 0386085 A4 EP0386085 A4 EP 0386085A4
Authority
EP
European Patent Office
Prior art keywords
mosfet
silicon carbide
carbide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19880909938
Other versions
EP0386085A1 (en
Inventor
John W. Palmour
Hua-Shuang Kong
Robert F. Davis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North Carolina State University filed Critical North Carolina State University
Publication of EP0386085A1 publication Critical patent/EP0386085A1/en
Publication of EP0386085A4 publication Critical patent/EP0386085A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP19880909938 1987-10-26 1988-10-26 Mosfet in silicon carbide Withdrawn EP0386085A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11356487A 1987-10-26 1987-10-26
US113564 1993-08-27

Publications (2)

Publication Number Publication Date
EP0386085A1 EP0386085A1 (en) 1990-09-12
EP0386085A4 true EP0386085A4 (en) 1990-11-28

Family

ID=22350162

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19880909938 Withdrawn EP0386085A4 (en) 1987-10-26 1988-10-26 Mosfet in silicon carbide

Country Status (5)

Country Link
EP (1) EP0386085A4 (en)
JP (1) JP2644028B2 (en)
KR (1) KR0137966B1 (en)
CA (1) CA1313571C (en)
WO (1) WO1989004056A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465249A (en) * 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
JP3146694B2 (en) * 1992-11-12 2001-03-19 富士電機株式会社 Silicon carbide MOSFET and method of manufacturing silicon carbide MOSFET
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
US5448081A (en) * 1993-02-22 1995-09-05 Texas Instruments Incorporated Lateral power MOSFET structure using silicon carbide
FR2707425A1 (en) * 1993-07-09 1995-01-13 Thomson Csf Structure of semiconductor material, application to the production of a transistor and method of production
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5385855A (en) * 1994-02-24 1995-01-31 General Electric Company Fabrication of silicon carbide integrated circuits
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
DE19712561C1 (en) * 1997-03-25 1998-04-30 Siemens Ag Silicon carbide semiconductor device e.g. lateral or vertical MOSFET
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
JP5098295B2 (en) 2006-10-30 2012-12-12 株式会社デンソー Method for manufacturing silicon carbide semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446961A1 (en) * 1983-12-23 1985-07-18 Sharp K.K., Osaka METHOD FOR PRODUCING A SIC SEMICONDUCTOR DEVICE
US4757028A (en) * 1985-10-07 1988-07-12 Agency Of Industrial Science And Technology Process for preparing a silicon carbide device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073110B (en) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Process for the production of rectifying or ohmic connection contacts on silicon carbide bodies
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
US3662458A (en) * 1969-06-20 1972-05-16 Westinghouse Electric Corp Electrical contact for silicon carbide members
US4032961A (en) * 1974-10-16 1977-06-28 General Electric Company Gate modulated bipolar transistor
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS567479A (en) * 1979-06-29 1981-01-26 Toshiba Corp Field-effect type semiconductor device
DE3208638A1 (en) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München SILICON CARBIDE LUMINESCENCE DIODE
JPS62136077A (en) * 1985-12-10 1987-06-19 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446961A1 (en) * 1983-12-23 1985-07-18 Sharp K.K., Osaka METHOD FOR PRODUCING A SIC SEMICONDUCTOR DEVICE
US4757028A (en) * 1985-10-07 1988-07-12 Agency Of Industrial Science And Technology Process for preparing a silicon carbide device

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 49, no. 17, 27th October 1986, pages 1074-1076, American Institute of Physics; H.S. KONG et al.: "Epitaxial growth of beta-SiC thin films on 6H alpha-SiC substrates via chemical vapor deposition" *
APPLIED PHYSICS LETTERS, vol. 51, no. 6, 10th August 1987, pages 442-444, American Institute of Physics, New York, US; H.S. KONG et al.: "Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type beta-SiC grown via chemical vapor deposition" *
I.E.E.E. ELECTRON DEVICE LETTERS, vol. EDL-8, no. 2, February 1987, pages 48-49, IEEE, New York, US; K. FURUKAWA et al.: "Insulated-gate and junction-gate FET's of CVD-grown beta-SiC" *
IEEE ELECTRON DEVICE LETTERS, vol. EDL-7, no. 12, December 1986, pages 692-693, IEEE, New York, US; K. SHIBAHARA et al.: "Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si(100)" *
JAPANESE JOURNAL OF APPLIED PHYSICS/PART 1: REGULAR PAPERS & SHORT NOTES, vol. 26, no. 2, February 1987, pages 310-311, Tokyo, JP; Y. KONDO et al.: "High-temperature operation of silicon carbide MOSFET" *
JOURNAL OF APPLIED PHYSICS, vol. 64, no. 4, 15th August 1988, pages 2168-2177, American Institute of Physics, Woodbury, NY, US; J.W. PALMOUR et al.: "Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in beta-SiC thin films" *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 133, no. 3, March 1986, pages 650-652, Manchester, NH, US; J.A. EDMOND et al.: "Chemical etching of ion implanted amorphous silicon carbide" *
See also references of WO8904056A1 *

Also Published As

Publication number Publication date
KR0137966B1 (en) 1998-06-01
KR890702245A (en) 1989-12-23
CA1313571C (en) 1993-02-09
WO1989004056A1 (en) 1989-05-05
EP0386085A1 (en) 1990-09-12
JP2644028B2 (en) 1997-08-25
JPH03501670A (en) 1991-04-11

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Effective date: 19900501

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A4 Supplementary search report drawn up and despatched

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: DAVIS, ROBERT, F.

Inventor name: KONG, HUA-SHUANG

Inventor name: PALMOUR, JOHN W.

STAA Information on the status of an ep patent application or granted ep patent

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18W Application withdrawn

Withdrawal date: 19910916