KR0137966B1 - Mosfet in silicon carbide - Google Patents

Mosfet in silicon carbide

Info

Publication number
KR0137966B1
KR0137966B1 KR89701157A KR890701157A KR0137966B1 KR 0137966 B1 KR0137966 B1 KR 0137966B1 KR 89701157 A KR89701157 A KR 89701157A KR 890701157 A KR890701157 A KR 890701157A KR 0137966 B1 KR0137966 B1 KR 0137966B1
Authority
KR
South Korea
Prior art keywords
mosfet
silicon carbide
carbide
silicon
Prior art date
Application number
KR89701157A
Other languages
English (en)
Korean (ko)
Other versions
KR890702245A (ko
Inventor
John W Plamour
Hua-Shuang Kong
Robert F Davis
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Publication of KR890702245A publication Critical patent/KR890702245A/ko
Application granted granted Critical
Publication of KR0137966B1 publication Critical patent/KR0137966B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR89701157A 1987-10-26 1989-06-26 Mosfet in silicon carbide KR0137966B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11356487A 1987-10-26 1987-10-26
US113,564 1987-10-26
PCT/US1988/003793 WO1989004056A1 (fr) 1987-10-26 1988-10-26 Transistor a effet de champ de type mos forme dans du carbure de silicium

Publications (2)

Publication Number Publication Date
KR890702245A KR890702245A (ko) 1989-12-23
KR0137966B1 true KR0137966B1 (en) 1998-06-01

Family

ID=22350162

Family Applications (1)

Application Number Title Priority Date Filing Date
KR89701157A KR0137966B1 (en) 1987-10-26 1989-06-26 Mosfet in silicon carbide

Country Status (5)

Country Link
EP (1) EP0386085A4 (fr)
JP (1) JP2644028B2 (fr)
KR (1) KR0137966B1 (fr)
CA (1) CA1313571C (fr)
WO (1) WO1989004056A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986807B1 (ko) 2006-10-30 2010-10-08 가부시키가이샤 덴소 탄화규소 반도체 장치를 제조하는 방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465249A (en) * 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
JP3146694B2 (ja) * 1992-11-12 2001-03-19 富士電機株式会社 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
US5448081A (en) * 1993-02-22 1995-09-05 Texas Instruments Incorporated Lateral power MOSFET structure using silicon carbide
FR2707425A1 (fr) * 1993-07-09 1995-01-13 Thomson Csf Structure en matériau semiconducteur, application à la réalisation d'un transistor et procédé de réalisation.
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5385855A (en) * 1994-02-24 1995-01-31 General Electric Company Fabrication of silicon carbide integrated circuits
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
DE19712561C1 (de) * 1997-03-25 1998-04-30 Siemens Ag SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
US3662458A (en) * 1969-06-20 1972-05-16 Westinghouse Electric Corp Electrical contact for silicon carbide members
US4032961A (en) * 1974-10-16 1977-06-28 General Electric Company Gate modulated bipolar transistor
US3975648A (en) * 1975-06-16 1976-08-17 Hewlett-Packard Company Flat-band voltage reference
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4582561A (en) * 1979-01-25 1986-04-15 Sharp Kabushiki Kaisha Method for making a silicon carbide substrate
JPS567479A (en) * 1979-06-29 1981-01-26 Toshiba Corp Field-effect type semiconductor device
DE3208638A1 (de) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode aus siliziumkarbid
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
JPS62136077A (ja) * 1985-12-10 1987-06-19 Nec Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986807B1 (ko) 2006-10-30 2010-10-08 가부시키가이샤 덴소 탄화규소 반도체 장치를 제조하는 방법

Also Published As

Publication number Publication date
JPH03501670A (ja) 1991-04-11
EP0386085A1 (fr) 1990-09-12
KR890702245A (ko) 1989-12-23
EP0386085A4 (en) 1990-11-28
WO1989004056A1 (fr) 1989-05-05
CA1313571C (fr) 1993-02-09
JP2644028B2 (ja) 1997-08-25

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120202

Year of fee payment: 15

EXPY Expiration of term